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    Plasma processing apparatus of substrate and plasma processing method thereof
    1.
    发明授权
    Plasma processing apparatus of substrate and plasma processing method thereof 有权
    基板等离子体处理装置及其等离子体处理方法

    公开(公告)号：US08252193B2

    公开(公告)日：2012-08-28

    申请号：US12052522

    申请日：2008-03-20

    申请人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

    发明人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

    IPC分类号： G01R31/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

    摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

    摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

    PLASMA PROCESSING APPARATUS OF SUBSTRATE AND PLASMA PROCESSING METHOD THEREOF
    2.
    发明申请
    PLASMA PROCESSING APPARATUS OF SUBSTRATE AND PLASMA PROCESSING METHOD THEREOF 有权
    基板等离子体处理装置及其等离子体处理方法

    公开(公告)号：US20080237185A1

    公开(公告)日：2008-10-02

    申请号：US12052522

    申请日：2008-03-20

    申请人： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

    发明人： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

    摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

    摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

    SIMULATION APPARATUS, SIMULATION METHOD, AND COMPUTER PROGRAM PRODUCT
    4.
    发明申请
    SIMULATION APPARATUS, SIMULATION METHOD, AND COMPUTER PROGRAM PRODUCT 有权
    模拟装置，模拟方法和计算机程序产品

    公开(公告)号：US20070118341A1

    公开(公告)日：2007-05-24

    申请号：US11556828

    申请日：2006-11-06

    申请人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

    发明人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

    IPC分类号： G06F17/10

    CPC分类号： G06F17/5018 ,  C23C14/54 ,  C23C16/52 ,  G06F2217/10

    摘要： A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.

    摘要翻译： 计算单元根据半导体器件的结构和多种材料中的任一种，计算半导体工艺中使用的化学物质与半导体器件之间的反应概率和化学物质的失活概率之一。 模拟单元基于反应概率和去激活概率中的任何一个对反应室中发生的物理现象进行模拟。

    Simulating a chemical reaction phenomenon in a semiconductor process
    5.
    发明授权
    Simulating a chemical reaction phenomenon in a semiconductor process 有权
    模拟半导体工艺中的化学反应现象

    公开(公告)号：US08548787B2

    公开(公告)日：2013-10-01

    申请号：US11556828

    申请日：2006-11-06

    申请人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

    发明人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

    IPC分类号： G06G7/58

    CPC分类号： G06F17/5018 ,  C23C14/54 ,  C23C16/52 ,  G06F2217/10

    摘要： A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.

    摘要翻译： 计算单元根据半导体器件的结构和多种材料中的任一种，计算半导体工艺中使用的化学物质与半导体器件之间的反应概率和化学物质的失活概率之一。 模拟单元基于反应概率和去激活概率中的任何一个对反应室中发生的物理现象进行模拟。

    SIMULATION METHOD AND SIMULATION PROGRAM
    6.
    发明申请
    SIMULATION METHOD AND SIMULATION PROGRAM 审中-公开
    模拟方法和仿真程序

    公开(公告)号：US20090048813A1

    公开(公告)日：2009-02-19

    申请号：US12192197

    申请日：2008-08-15

    申请人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

    发明人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

    IPC分类号： G06F17/10

    CPC分类号： G06F17/5018

    摘要： A simulation method is configured to simulate a feature profile of a material surface. The simulation method includes using an algorithm of repeating a step of calculating a surface growth rate and a step of skipping the calculation of the surface growth rate. The surface growth rate is calculated in the step of skipping the calculation of the algorithm if the material surface traverses a material interface.

    摘要翻译： 模拟方法被配置为模拟材料表面的特征轮廓。 模拟方法包括使用重复计算表面生长速率的步骤的算法和跳过表面生长速率的计算的步骤。 如果材料表面穿过材料界面，则在跳过算法计算的步骤中计算出表面生长速率。

    SIMULATION METHOD AND SIMULATION PROGRAM
    7.
    发明申请
    SIMULATION METHOD AND SIMULATION PROGRAM 有权
    模拟方法和仿真程序

    公开(公告)号：US20090055143A1

    公开(公告)日：2009-02-26

    申请号：US12192179

    申请日：2008-08-15

    申请人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

    发明人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

    IPC分类号： G06F17/10

    CPC分类号： G06F17/5018

    摘要： A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a first computational element on the deposition rate or etching rate of a second computational element. The calculating the indirect effect includes correcting a surface profile at the first computational element on the basis of a surface structure around the first computational element, and calculating the indirect effect on the basis of the corrected surface profile at the first computational element.

    摘要翻译： 一种模拟方法包括将材料表面划分为有限计算元件，以及计算每个计算元件上的沉积速率或蚀刻速率以模拟材料表面的特征轮廓，所述计算包括计算第一计算元素的间接效应 第二计算元件的沉积速率或蚀刻速率。 计算间接效应包括基于围绕第一计算元件的表面结构来校正第一计算元件处的表面轮廓，以及基于第一计算元件处的校正表面轮廓计算间接效应。

    Simulation method and simulation program
    8.
    发明授权
    Simulation method and simulation program 有权
    仿真方法和仿真程序

    公开(公告)号：US08209155B2

    公开(公告)日：2012-06-26

    申请号：US12192179

    申请日：2008-08-15

    申请人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

    发明人： Takashi Ichikawa ,  Naoki Tamaoki ,  Toshiro Takase

    IPC分类号： G06F7/60 ,  G06F17/10

    CPC分类号： G06F17/5018

    摘要： A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a first computational element on the deposition rate or etching rate of a second computational element. The calculating the indirect effect includes correcting a surface profile at the first computational element on the basis of a surface structure around the first computational element, and calculating the indirect effect on the basis of the corrected surface profile at the first computational element.

    摘要翻译： 一种模拟方法包括将材料表面划分为有限计算元件，以及计算每个计算元件上的沉积速率或蚀刻速率以模拟材料表面的特征轮廓，所述计算包括计算第一计算元素的间接效应 第二计算元件的沉积速率或蚀刻速率。 计算间接效应包括基于围绕第一计算元件的表面结构来校正第一计算元件处的表面轮廓，以及基于第一计算元件处的校正表面轮廓计算间接效应。