公开(公告)号：US08252193B2

公开(公告)日：2012-08-28

申请号：US12052522

申请日：2008-03-20

申请人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

发明人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC分类号： G01R31/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US08821684B2

公开(公告)日：2014-09-02

申请号：US12363070

申请日：2009-01-30

申请人： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： C23F1/00 ,  C23C16/50 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32027 ,  H01J37/32045 ,  H01J37/32091

摘要： A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

摘要翻译： 衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置 以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。

公开(公告)号：US08545670B2

公开(公告)日：2013-10-01

申请号：US12209617

申请日：2008-09-12

申请人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

发明人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165

摘要： A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.

摘要翻译： 使用等离子体处理衬底的等离子体处理装置包括：被配置为安装衬底的第一电极，以预定空间设置为面对第一电极的第二电极，容纳第一电极和第二电极的腔室， 调整内部气氛的第一电源装置，被配置为向第一电极施加用于控制在基板上产生的自偏压的第一RF电压的第一电源装置，施加基本上恒定的宽度和基本恒定的值的第一电力源装置 在间隔的第一频率的RF电压的峰峰值电压中，以及第二电源装置，被配置为将第二频率的第二RF电压施加到第一和第二电极之间的等离子体之一 第一电极和第二电极。

公开(公告)号：US20090078678A1

公开(公告)日：2009-03-26

申请号：US12209617

申请日：2008-09-12

申请人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

发明人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165

摘要： A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.

摘要翻译： 使用等离子体处理衬底的等离子体处理装置包括：被配置为安装衬底的第一电极，以预定空间设置为面对第一电极的第二电极，容纳第一电极和第二电极的腔室， 调整内部气氛的第一电源装置，被配置为向第一电极施加用于控制在基板上产生的自偏压的第一RF电压的第一电源装置，施加基本上恒定的宽度和基本恒定的值的第一电力源装置 在间隔的第一频率的RF电压的峰峰值电压中，以及第二电源装置，被配置为将第二频率的第二RF电压施加到第一和第二电极之间的等离子体之一 第一电极和第二电极。

公开(公告)号：US08548787B2

公开(公告)日：2013-10-01

申请号：US11556828

申请日：2006-11-06

申请人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

发明人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

IPC分类号： G06G7/58

CPC分类号： G06F17/5018 ,  C23C14/54 ,  C23C16/52 ,  G06F2217/10

摘要： A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.

摘要翻译： 计算单元根据半导体器件的结构和多种材料中的任一种，计算半导体工艺中使用的化学物质与半导体器件之间的反应概率和化学物质的失活概率之一。 模拟单元基于反应概率和去激活概率中的任何一个对反应室中发生的物理现象进行模拟。

公开(公告)号：US20070118341A1

公开(公告)日：2007-05-24

申请号：US11556828

申请日：2006-11-06

申请人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

发明人： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

IPC分类号： G06F17/10

CPC分类号： G06F17/5018 ,  C23C14/54 ,  C23C16/52 ,  G06F2217/10

摘要： A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.

摘要翻译： 计算单元根据半导体器件的结构和多种材料中的任一种，计算半导体工艺中使用的化学物质与半导体器件之间的反应概率和化学物质的失活概率之一。 模拟单元基于反应概率和去激活概率中的任何一个对反应室中发生的物理现象进行模拟。

公开(公告)号：US20100072172A1

公开(公告)日：2010-03-25

申请号：US12562137

申请日：2009-09-18

申请人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： H01L21/3065 ,  C23F1/02

CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32532 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67253 ,  H01L22/14 ,  H01L22/26

摘要： There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

摘要翻译： 提供了一种基板处理装置和基板处理方法，其实现有效地降低电极上的基板的电压变化，以减少进入基板的离子的入射能量的变化。 基板处理装置包括：第一电极，其在第一电极的主表面上保持基板; 面对所述第一电极的第二电极; RF电源，其向所述第一电极施加频率等于或高于40MHz的RF电压; 以及脉冲电压施加单元，通过将所述脉冲电压叠加在所述RF电压上，向所述第一电极施加按照经过的时间降低的脉冲电压。

公开(公告)号：US09583360B2

公开(公告)日：2017-02-28

申请号：US13424952

申请日：2012-03-20

申请人： Akio Ui ,  Hisataka Hayashi ,  Keisuke Kikutani

发明人： Akio Ui ,  Hisataka Hayashi ,  Keisuke Kikutani

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32174

摘要： In one embodiment, a substrate processing apparatus, includes: a chamber; a first electrode disposed in the chamber; a second electrode disposed in the chamber to face the first electrode, and to hold a substrate; an RF power supply to apply an RF voltage with a frequency of 50 MHz or more to the second electrode; and a pulse power supply to repeatedly apply a voltage waveform including a negative voltage pulse and a positive voltage pulse of which delay time from the negative voltage pulse is 50 nano-seconds or less to the second electrode while superposing on the RF voltage.

摘要翻译： 在一个实施例中，基板处理装置包括：腔室; 设置在所述室中的第一电极; 设置在所述腔室中以面对所述第一电极并且保持衬底的第二电极; RF电源，向第二电极施加频率为50MHz以上的RF电压; 以及脉冲电源，用于在叠加在RF电压上的同时，将包括负电压脉冲和负电压脉冲的延迟时间的正电压脉冲的电压波形重复地施加到第二电极50纳秒以下。

公开(公告)号：US08821744B2

公开(公告)日：2014-09-02

申请号：US13051771

申请日：2011-03-18

申请人： Akio Ui ,  Hisataka Hayashi

发明人： Akio Ui ,  Hisataka Hayashi

IPC分类号： B44C1/22

CPC分类号： H01L21/31116 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174

摘要： A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode.

摘要翻译： 使用基板处理装置的基板处理方法包括第一步骤和第二步骤。 第一步是施加来自脉冲电源的负电压脉冲以包括在装置中。 第二步是在负电压脉冲和负电压脉冲之后的脉冲电源的正电压脉冲之间的时间间隔上施加浮动电位。 此外，该装置包括腔室，第一电极，第二电极，RF电源和脉冲电源。 第二电极设置成使得第二电极面对第一电极以保持基板。 RF电源对第二电极施加频率为50MHz以上的RF电压。 脉冲电源将具有RF电压的电压波形重复地施加到第二电极。

公开(公告)号：US20110223750A1

公开(公告)日：2011-09-15

申请号：US13043017

申请日：2011-03-08

申请人： Hisataka HAYASHI ,  Takeshi Kaminatsui ,  Akio Ui

发明人： Hisataka HAYASHI ,  Takeshi Kaminatsui ,  Akio Ui

IPC分类号： H01L21/265 ,  C23C16/515 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32146 ,  H01L21/3065

摘要： According to an embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes: arranging a semiconductor substrate on a first electrode out of first and second electrodes arranged to be opposed to each other in a vacuum container; applying negative first pulse voltage and radio-frequency voltage to the first electrode, the negative first pulse voltage being superimposed with the radio-frequency voltage; applying negative second pulse voltage to the second electrode in an off period of the first pulse voltage; and processing the semiconductor substrate or a member on the semiconductor substrate by plasma formed between the first and second electrodes.

摘要翻译： 根据实施例，公开了一种用于制造半导体器件的方法。 该方法包括：在真空容器内布置成彼此相对的第一和第二电极的第一电极上的半导体衬底布置; 对第一电极施加负的第一脉冲电压和射频电压，负的第一脉冲电压与射频电压叠加; 在所述第一脉冲电压的关闭期间，向所述第二电极施加负的第二脉冲电压; 以及通过在第一和第二电极之间形成的等离子体处理半导体衬底或半导体衬底上的构件。