公开(公告)号：US08357557B2

公开(公告)日：2013-01-22

申请号：US12717537

申请日：2010-03-04

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/54

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US20120187414A1

公开(公告)日：2012-07-26

申请号：US13439895

申请日：2012-04-05

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/22 ,  H01L33/30

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US08659040B2

公开(公告)日：2014-02-25

申请号：US13439895

申请日：2012-04-05

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/32

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US20100221856A1

公开(公告)日：2010-09-02

申请号：US12717537

申请日：2010-03-04

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/30 ,  H01L33/44 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US08089081B2

公开(公告)日：2012-01-03

申请号：US12404807

申请日：2009-03-16

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takeyuki Suzuki

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takeyuki Suzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)2) being equal to or larger than 0.7.

摘要翻译： 一种半导体发光器件，包括：衬底; 电极层; 以及设置在所述基板和所述电极层之间的半导体多层膜，所述半导体多层膜包括：n型半导体层; p型半导体层; 以及设置在所述n型半导体层和所述p型半导体层之间的有源层，其中，所述半导体多层膜具有从所述半导体多层膜发射的光被提取的光提取面，所述光提取面形成有 具有纳米级凸部的浮雕结构，其中所述浮雕结构形成为具有所述凸部的等效圆直径的变化，并且其中所述浮雕结构中的所述凸部中的90％以上的构造具有圆形度系数（ 4＆pgr×（面积）/（圆周长度）2）等于或大于0.7。

公开(公告)号：US20100065868A1

公开(公告)日：2010-03-18

申请号：US12404807

申请日：2009-03-16

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takeyuki Suzuki

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takeyuki Suzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)2) being equal to or larger than 0.7.

摘要翻译： 一种半导体发光器件，包括：衬底; 电极层; 以及设置在所述基板和所述电极层之间的半导体多层膜，所述半导体多层膜包括：n型半导体层; p型半导体层; 以及设置在所述n型半导体层和所述p型半导体层之间的有源层，其中，所述半导体多层膜具有从所述半导体多层膜发射的光被提取的光提取面，所述光提取面形成有 具有纳米级凸部的浮雕结构，其中所述浮雕结构形成为具有所述凸部的等效圆直径的变化，并且其中所述浮雕结构中的所述凸部中的90％以上的构造具有圆形度系数（ 4＆pgr×（面积）/（圆周长度）2）等于或大于0.7。

公开(公告)号：US08795923B2

公开(公告)日：2014-08-05

申请号：US12919276

申请日：2008-10-17

申请人： Yasuhiro Akita ,  Takeshi Nagasawa ,  Takeyuki Suzuki ,  Toyohiro Matsuura

发明人： Yasuhiro Akita ,  Takeshi Nagasawa ,  Takeyuki Suzuki ,  Toyohiro Matsuura

IPC分类号： H01M8/10

CPC分类号： H01B1/122 ,  C08J5/2206 ,  C08J2327/18 ,  H01M8/1023 ,  H01M8/1039 ,  H01M8/1048 ,  H01M8/106 ,  H01M8/1062 ,  H01M8/1067 ,  H01M8/1079 ,  Y02P70/56

摘要： The present invention provides a reinforced electrolyte membrane for fuel cell comprising a porous substrate impregnated with a polyelectrolyte liquid dispersion, wherein either the maximum tensile strength in the machine direction (for sheet processing) (MD) or the maximum tensile strength in the transverse direction (TD; vertical to the MD direction) for the electrolyte membrane is 70 N/mm2 or more at 23° C. at a relative humidity of 50% or 40 N/mm2 or more at 80° C. at a relative humidity of 90%. This reinforced electrolyte membrane for fuel cell, in which the amount of fluorine ions eluted as a result of deterioration of electrolyte membrane components in particular is reduced, has excellent durability.

摘要翻译： 本发明提供一种用于燃料电池的增强电解质膜，其包括浸渍有聚电解质液体分散体的多孔基材，其中在纵向（用于片材加工）（MD）或在横向上的最大拉伸强度 在相对湿度90％的相对湿度为50％或40N / mm 2以上的情况下，电解质膜的电阻率为70N / mm 2以上，相对湿度90％ 。 这种用于燃料电池的增强电解质膜特别是由于电解质膜组分的劣化而洗脱的氟离子的量减少，具有优异的耐久性。

公开(公告)号：US08154597B2

公开(公告)日：2012-04-10

申请号：US12047899

申请日：2008-03-13

申请人： Takeyuki Suzuki

发明人： Takeyuki Suzuki

IPC分类号： H04N7/18

CPC分类号： G08B25/016 ,  B60R21/01538 ,  B60R25/302 ,  B60R25/305 ,  B60R2021/0027

摘要： An on-vehicle emergency call apparatus includes: a camera capturing an image of an interior of a vehicle; a capturing controller controlling the camera; and a transmitter transmitting an image capturing result obtained by the capturing camera to an emergency information center. The capturing controller controls the camera so as to capture images while switching alternately between an instant capturing shutter speed for capturing an instant image of a subject and a translocation capturing shutter speed for capturing a translocation image of the subject, in which instant capturing shutter speed and the translocation capturing shutter speed are different from each other. An image superimposer can superimpose the instant image and the translocation image to produce the image capturing result. An incident detector can detect an incident involving the vehicle whereupon the image superimposer superimposes the instant image and the translocation image to produce the image capturing result when the incident detector detects an incident involving the vehicle.

摘要翻译： 车载紧急呼叫装置包括：摄像机内部图像的摄像机; 控制摄像机的拍摄控制器; 以及发送由拍摄照相机获得的图像拍摄结果发送到紧急信息中心的发射机。 拍摄控制器控制相机，以便在用于捕获被摄体的即时图像的瞬间捕获快门速度和用于捕获被摄体的易位图像的易位捕获快门速度之间交替切换时捕获图像，其中即时拍摄快门速度和 易位捕获快门速度彼此不同。 图像叠加器可以叠加即时图像和易位图像以产生图像捕获结果。 事件检测器可以检测涉及车辆的事件，因此当入射检测器检测到涉及车辆的事件时，图像叠加器叠加即时图像和易位图像以产生图像捕获结果。

公开(公告)号：US20080225118A1

公开(公告)日：2008-09-18

申请号：US12047899

申请日：2008-03-13

申请人： Takeyuki Suzuki

发明人： Takeyuki Suzuki

IPC分类号： H04N7/18

CPC分类号： G08B25/016 ,  B60R21/01538 ,  B60R25/302 ,  B60R25/305 ,  B60R2021/0027

摘要： An on-vehicle emergency call apparatus includes: a camera capturing an image of an interior of a vehicle; a capturing controller controlling the camera; and a transmitter transmitting an image capturing result obtained by the capturing camera to an emergency information center. The capturing controller controls the camera so as to capture images while switching alternately between an instant capturing shutter speed for capturing an instant image of a subject and a translocation capturing shutter speed for capturing a translocation image of the subject, in which instant capturing shutter speed and the translocation capturing shutter speed are different from each other. An image superimposer can superimpose the instant image and the translocation image to produce the image capturing result. An incident detector can detect an incident involving the vehicle whereupon the image superimposer superimposes the instant image and the translocation image to produce the image capturing result when the incident detector detects an incident involving the vehicle.

摘要翻译： 车载紧急呼叫装置包括：摄像机内部图像的摄像机; 控制摄像机的拍摄控制器; 以及发送由拍摄照相机获得的图像拍摄结果发送到紧急信息中心的发射机。 拍摄控制器控制相机，以便在用于捕获被摄体的即时图像的瞬间捕获快门速度和用于捕获被摄体的易位图像的易位捕获快门速度之间交替切换时捕获图像，其中即时拍摄快门速度和 易位捕获快门速度彼此不同。 图像叠加器可以叠加即时图像和易位图像以产生图像捕获结果。 事件检测器可以检测涉及车辆的事件，因此当入射检测器检测到涉及车辆的事件时，图像叠加器叠加即时图像和易位图像以产生图像捕获结果。

公开(公告)号：US07274093B2

公开(公告)日：2007-09-25

申请号：US11315482

申请日：2005-12-23

申请人： Takeyuki Suzuki

发明人： Takeyuki Suzuki

IPC分类号： H01L23/02 ,  H01L23/34

CPC分类号： H01R13/2464 ,  G01R1/0466 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device carrier comprising; a carrier housing having a housing portion for accommodating a semiconductor device; an electrode sheet disposed in the carrier housing, having a front surface wiring conductively arranged on a front surface of an insulation substrate, a rear surface wiring conductively arranged on a rear surface of the insulation substrate, a rear surface bump contact placement wiring, and a bump contact disposed in a contact placement portion and an elastic sheet disposed in the carrier housing to be in contact with the bottom of the electrode sheet; wherein a width of the rear surface bump contact placement wiring in correspondence to a bump contact to be in contact with an extreme electrode section of the semiconductor device is smaller than a width of the front surface bump contact placement wiring on which a bump contact to be in contact with the extreme electrode section is arranged.

摘要翻译： 一种半导体器件载体，包括： 载体壳体，具有用于容纳半导体器件的壳体部分; 布置在所述载体壳体中的电极板，具有导电地布置在绝缘基板的前表面上的前表面布线，导电地布置在所述绝缘基板的后表面上的后表面布线，后表面凸块接触布置布线和 布置在接触放置部分中的凸起接触件和布置在载体壳体中以与电极片的底部接触的弹性片; 其特征在于，与所述半导体装置的前端电极部接触的与所述凸点接触对应的所述背面突起接触放置配线的宽度小于所述前面凸块接触配线的宽度， 与极极部分接触。