公开(公告)号：US08357557B2

公开(公告)日：2013-01-22

申请号：US12717537

申请日：2010-03-04

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/54

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US20120187414A1

公开(公告)日：2012-07-26

申请号：US13439895

申请日：2012-04-05

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/22 ,  H01L33/30

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US20100221856A1

公开(公告)日：2010-09-02

申请号：US12717537

申请日：2010-03-04

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/30 ,  H01L33/44 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US08659040B2

公开(公告)日：2014-02-25

申请号：US13439895

申请日：2012-04-05

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/32

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US08089081B2

公开(公告)日：2012-01-03

申请号：US12404807

申请日：2009-03-16

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takeyuki Suzuki

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takeyuki Suzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)2) being equal to or larger than 0.7.

摘要翻译： 一种半导体发光器件，包括：衬底; 电极层; 以及设置在所述基板和所述电极层之间的半导体多层膜，所述半导体多层膜包括：n型半导体层; p型半导体层; 以及设置在所述n型半导体层和所述p型半导体层之间的有源层，其中，所述半导体多层膜具有从所述半导体多层膜发射的光被提取的光提取面，所述光提取面形成有 具有纳米级凸部的浮雕结构，其中所述浮雕结构形成为具有所述凸部的等效圆直径的变化，并且其中所述浮雕结构中的所述凸部中的90％以上的构造具有圆形度系数（ 4＆pgr×（面积）/（圆周长度）2）等于或大于0.7。

公开(公告)号：US20100065868A1

公开(公告)日：2010-03-18

申请号：US12404807

申请日：2009-03-16

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takeyuki Suzuki

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takeyuki Suzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)2) being equal to or larger than 0.7.

摘要翻译： 一种半导体发光器件，包括：衬底; 电极层; 以及设置在所述基板和所述电极层之间的半导体多层膜，所述半导体多层膜包括：n型半导体层; p型半导体层; 以及设置在所述n型半导体层和所述p型半导体层之间的有源层，其中，所述半导体多层膜具有从所述半导体多层膜发射的光被提取的光提取面，所述光提取面形成有 具有纳米级凸部的浮雕结构，其中所述浮雕结构形成为具有所述凸部的等效圆直径的变化，并且其中所述浮雕结构中的所述凸部中的90％以上的构造具有圆形度系数（ 4＆pgr×（面积）/（圆周长度）2）等于或大于0.7。

公开(公告)号：US07037738B2

公开(公告)日：2006-05-02

申请号：US10346108

申请日：2003-01-17

申请人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

发明人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

IPC分类号： H01L21/00

CPC分类号： H01L33/22

摘要： There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

摘要翻译： 公开了一种半导体发光元件，包括具有第一表面和第二表面的基板，形成在基板的第一表面上并包含发光层的半导体层叠体和具有光提取表面的电流扩散层 。 发光元件设置有由精细凹入/突出表面构成的光提取表面，其90％构造成使得其具有锥形构造的突出部分的高度为100nm以上 ，突出部的基部的宽度在10〜500nm的范围内。

公开(公告)号：US20050145864A1

公开(公告)日：2005-07-07

申请号：US11054409

申请日：2005-02-10

申请人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

发明人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

IPC分类号： H01L21/302 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/22

摘要： There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

摘要翻译： 公开了一种半导体发光元件，包括具有第一表面和第二表面的基板，形成在基板的第一表面上并包含发光层的半导体层叠体和具有光提取表面的电流扩散层 。 发光元件设置有由精细凹入/突出表面构成的光提取表面，其90％构造成使得其具有锥形构造的突出部分的高度为100nm以上 ，突出部的基部的宽度在10〜500nm的范围内。

公开(公告)号：US09324914B2

公开(公告)日：2016-04-26

申请号：US12712693

申请日：2010-02-25

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L2933/0083

摘要： A semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and suitable for lighting instruments such as lights and lamps. The semiconductor device includes a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and penetrate through the metal electrode layer. The metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.

摘要翻译： 即使电力增加也能够保持高亮度强度的半导体发光装置，适用于灯具等照明装置。 半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。 开口的平均直径为10nm〜2μm，贯穿金属电极层。 金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。

公开(公告)号：US08921887B2

公开(公告)日：2014-12-30

申请号：US13221319

申请日：2011-08-30

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/62 ,  H01L33/38

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。