公开(公告)号：US5300520A

公开(公告)日：1994-04-05

申请号：US690668

申请日：1991-04-24

申请人： Akira Igarashi ,  Koh Ogura ,  Masayuki Asai ,  Kazuya Okubo ,  Yosei Kuwazuru

发明人： Akira Igarashi ,  Koh Ogura ,  Masayuki Asai ,  Kazuya Okubo ,  Yosei Kuwazuru

IPC分类号： B27K3/38 ,  B27K3/50 ,  A01N37/00 ,  A01N43/64 ,  A01N43/78 ,  A01N47/10

CPC分类号： A01N25/02 ,  C08L97/02 ,  B27K3/34 ,  B27K3/343 ,  B27K3/38 ,  B27K3/50 ,  C08L67/08

摘要： A wood preservative composition which comprises a wood preservative in an amount of 0.01-10% by weight and a diphenylalkane compound represented by the general formula ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are independently hydrogen or an alkyl, in an amount of not less than 1% by weight and in an amount of 1-1000 parts by weight in relation to one part by weight of the wood preservative.

摘要翻译： 一种木材防腐剂组合物，其包含0.01-10重量％的木材防腐剂和由通式（* CHEMICAL STRUCTURE *）表示的二苯基烷烃化合物，其中R 1，R 2，R 3，R 4和R 5独立地是氢或烷基 ，相对于木材防腐剂的1重量份，其量为不小于1重量％，量为1-1000重量份。

公开(公告)号：US07524766B2

公开(公告)日：2009-04-28

申请号：US10521248

申请日：2003-07-15

申请人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

发明人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/45542 ,  C23C16/0272 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.

摘要翻译： 以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。 通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。 在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。 在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。 初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。 通过初始成膜步骤的一个步骤可以获得所需的厚度。 然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体 不使用热CVD法等离子体激发。

公开(公告)号：US20090104792A1

公开(公告)日：2009-04-23

申请号：US11990451

申请日：2007-01-17

申请人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

发明人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

IPC分类号： H01L21/314

CPC分类号： H01L21/31608 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228

摘要： Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10−1 or lower.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其特征在于，包括：将形成在其表面上的至少一个基板上的钨膜加载到处理室内; 以及通过多次交替重复以下步骤在包括所述钨膜的所述基板的表面上形成氧化硅膜：在400℃下加热所述基板的同时向所述处理室供给包含硅原子的第一反应材料; 并在处理室中加入作为第二反应材料的氢和水，同时以400℃的水相对于氢为2×10 -1或更低的比例加热基底。

公开(公告)号：US20070042581A1

公开(公告)日：2007-02-22

申请号：US10574571

申请日：2005-01-21

申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

IPC分类号： H01L21/24

CPC分类号： H01L21/02148 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31645 ,  H01L21/3185

摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device. The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.

摘要翻译： 提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。 该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二 形成薄膜步骤的阶段。

公开(公告)号：US20050250341A1

公开(公告)日：2005-11-10

申请号：US10521248

申请日：2003-07-15

申请人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

发明人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45542 ,  C23C16/0272 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.

摘要翻译： 以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。 通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。 在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。 在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。 初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。 通过初始成膜步骤的一个步骤可以获得所需的厚度。 然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体 不使用热CVD法等离子体激发。

公开(公告)号：US07767594B2

公开(公告)日：2010-08-03

申请号：US11990451

申请日：2007-01-17

申请人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

发明人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

IPC分类号： H01L21/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228

摘要： Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10−1 or lower.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其特征在于，包括：将形成在其表面上的至少一个基板上的钨膜加载到处理室内; 以及通过多次交替重复以下步骤在包括所述钨膜的所述基板的表面上形成氧化硅膜：在400℃下加热所述基板的同时向所述处理室供给包含硅原子的第一反应材料; 并在处理室中以与水相对于氢的比例为2×10-1或更低的方式在400℃下加热基板，并且向第一反应材料供给氢气和水。

公开(公告)号：US07531467B2

公开(公告)日：2009-05-12

申请号：US10574571

申请日：2005-01-21

申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

IPC分类号： H01L21/31

CPC分类号： H01L21/02148 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31645 ,  H01L21/3185

摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device.The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.

摘要翻译： 提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。 该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二 形成薄膜步骤的阶段。

公开(公告)号：US09545736B2

公开(公告)日：2017-01-17

申请号：US13985231

申请日：2012-02-13

申请人： Masayuki Asai ,  Mineo Suzuki ,  Tetsu Yabuno

发明人： Masayuki Asai ,  Mineo Suzuki ,  Tetsu Yabuno

IPC分类号： B29C33/38 ,  B22F3/11 ,  B22F3/24 ,  B22F5/00 ,  C22C49/08 ,  B22D17/22 ,  C22C47/14

CPC分类号： B29C33/3814 ,  B22D17/2209 ,  B22F3/11 ,  B22F3/24 ,  B22F5/007 ,  C22C47/14 ,  C22C49/08

摘要： A mold and die metallic material, an air-permeable member for mold and die use, and a method for making the same are provided. The mold and die metallic material is made by forming a mixed material containing stainless steel fibers with an equivalent diameter of 30-300 μm and a length of 0.4-5.0 mm, and stainless steel powder, heat sintering a green body of the mixed material, and heating the sintered body thus obtained in a nitrogen atmosphere and nitrided; wherein average open pore diameter thereof is 3-50 μm.

摘要翻译： 提供了模具和模具金属材料，用于模具和模具的透气部件及其制造方法。 模具和模具金属材料通过形成具有当量直径为30-300μm，长度为0.4-5.0mm的不锈钢纤维的混合材料和不锈钢粉末，热混合材料的生坯， 并在氮气气氛中加热由此获得的烧结体并氮化; 其中平均开孔直径为3-50μm。

公开(公告)号：US20130313405A1

公开(公告)日：2013-11-28

申请号：US13985231

申请日：2012-02-13

申请人： Masayuki Asai ,  Mineo Suzuki ,  Tetsu Yabuno

发明人： Masayuki Asai ,  Mineo Suzuki ,  Tetsu Yabuno

IPC分类号： B29C33/38

CPC分类号： B29C33/3814 ,  B22D17/2209 ,  B22F3/11 ,  B22F3/24 ,  B22F5/007 ,  C22C47/14 ,  C22C49/08

摘要： A mold and die metallic material, an air-permeable member for mold and die use, and a method for making the same are provided. The mold and die metallic material is made by forming a mixed material containing stainless steel fibers with an equivalent diameter of 30-300 μm and a length of 0.4-5.0 mm, and stainless steel powder, heat sintering a green body of the mixed material, and heating the sintered body thus obtained in a nitrogen atmosphere and nitrided; wherein average open pore diameter thereof is 3-50 μm.

摘要翻译： 提供了模具和模具金属材料，用于模具和模具的透气部件及其制造方法。 模具和模具金属材料通过形成具有当量直径为30-300μm，长度为0.4-5.0mm的不锈钢纤维的混合材料和不锈钢粉末，将混合材料的生坯热烧结， 并在氮气气氛中加热由此获得的烧结体并氮化; 其中平均开孔直径为3-50μm。

公开(公告)号：US08168549B2

公开(公告)日：2012-05-01

申请号：US12880287

申请日：2010-09-13

申请人： Masayuki Asai

发明人： Masayuki Asai

IPC分类号： H01L21/469

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45557 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/0228

摘要： There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus by which the quality of a silicon nitride film can be improved. The method comprises: (a) supplying a silicon-containing gas into a process chamber accommodating a substrate in a heated state; (b) switching between an exhaust stop state and an exhaust operation state at least two times while a nitrogen-containing gas is supplied into the process chamber so as to vary an inside pressure of the process chamber such that a maximum inside pressure of the process chamber is at least twenty times higher than a minimum inside pressure of the process chamber. The steps (a) and (b) are alternately repeated to form a silicon nitride film on the substrate.

摘要翻译： 提供了一种制造半导体器件的方法和可以提高氮化硅膜质量的衬底处理设备。 该方法包括：（a）在加热状态下将含硅气体供应到容纳基板的处理室中; （b）在排气停止状态和排气操作状态之间切换至少两次，同时向所述处理室供应含氮气体，以便改变所述处理室的内部压力，使得所述处理的最大内部压力 室至少比处理室的最小内压高二十倍。 交替地重复步骤（a）和（b），以在衬底上形成氮化硅膜。