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    Ceramic member, probe holder, and method of manufacturing ceramic member
    5.
    发明授权
    Ceramic member, probe holder, and method of manufacturing ceramic member 有权
    陶瓷构件，探针架，以及陶瓷构件的制造方法

    公开(公告)号：US08806969B2

    公开(公告)日：2014-08-19

    申请号：US12309537

    申请日：2007-07-23

    申请人： Shinya Miyaji ,  Shinji Saito

    发明人： Shinya Miyaji ,  Shinji Saito

    IPC分类号： C03C10/00 ,  G01D21/00

    CPC分类号： G01R3/00 ,  C04B35/20 ,  C04B35/645 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/787 ,  C04B2235/9607 ,  G01R1/07314 ,  G01R1/07371 ,  G01R1/44

    摘要： To provide a ceramic member having a thermal expansion coefficient close to that of silicon and has satisfactory workability, a probe holder formed by using this ceramic member, and a method of manufacturing the ceramic member. For this purpose, at least mica and silicon dioxide are mixed and an external force oriented in one direction is caused to act on this mixed mixture to sinter the mixture. It is more preferable that, in the mixture, a volume content of the mica is 70 to 90 volume % and a volume content of the silicon dioxide is 10 to 30 volume %.

    摘要翻译： 为了提供具有接近于硅的热膨胀系数的陶瓷构件，并且具有令人满意的可加工性，通过使用该陶瓷构件形成的探针保持架以及陶瓷构件的制造方法。 为此目的，至少将云母和二氧化硅混合，并使在一个方向上取向的外力作用于该混合混合物以烧结混合物。 更优选的是，在混合物中，云母的体积含量为70〜90体积％，二氧化硅的体积含量为10〜30体积％。

    Ceramic Member, Probe Holder, and Method of Manufacturing Ceramic Member
    6.
    发明申请
    Ceramic Member, Probe Holder, and Method of Manufacturing Ceramic Member 有权
    陶瓷构件，探头支架和陶瓷构件的制造方法

    公开(公告)号：US20100000347A1

    公开(公告)日：2010-01-07

    申请号：US12309537

    申请日：2007-07-23

    申请人： Shinya Miyaji ,  Shinji Saito

    发明人： Shinya Miyaji ,  Shinji Saito

    IPC分类号： G01D21/00 ,  C03C10/00

    CPC分类号： G01R3/00 ,  C04B35/20 ,  C04B35/645 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/787 ,  C04B2235/9607 ,  G01R1/07314 ,  G01R1/07371 ,  G01R1/44

    摘要： To provide a ceramic member having a thermal expansion coefficient close to that of silicon and has satisfactory workability, a probe holder formed by using this ceramic member, and a method of manufacturing the ceramic member. For this purpose, at least mica and silicon dioxide are mixed and an external force oriented in one direction is caused to act on this mixed mixture to sinter the mixture. It is more preferable that, in the mixture, a volume content of the mica is 70 to 90 volume % and a volume content of the silicon dioxide is 10 to 30 volume %.

    摘要翻译： 为了提供具有接近于硅的热膨胀系数的陶瓷构件，并且具有令人满意的可加工性，通过使用该陶瓷构件形成的探针保持架以及陶瓷构件的制造方法。 为此目的，至少将云母和二氧化硅混合，并使在一个方向上取向的外力作用于该混合混合物以烧结混合物。 更优选的是，在混合物中，云母的体积含量为70〜90体积％，二氧化硅的体积含量为10〜30体积％。

    Sprayed coating and production method for the same
    7.
    发明授权
    Sprayed coating and production method for the same 有权
    喷涂及生产方法相同

    公开(公告)号：US07390583B2

    公开(公告)日：2008-06-24

    申请号：US10751109

    申请日：2004-01-05

    申请人： Shinya Miyaji ,  Shinji Saito

    发明人： Shinya Miyaji ,  Shinji Saito

    IPC分类号： B32B9/00

    CPC分类号： C23C4/11

    摘要： A sprayed coating is proposed in which a problem of a condition of oxygen defect which cannot be solved by conventional densification of the sprayed coating is solved, whereby excellent electrical insulation and corrosion resistance can be simultaneously obtained. A sprayed coating formed by plasma spraying inside a semiconductor processing device comprises a metal oxide or a semiconductor oxide, and composition ratio of oxygen with respect to a metal or a semiconductor which composes oxides, that is (oxygen/(metal or semiconductor)) is not less than 80% of a composition ratio in the case of stoichiometric composition.

    摘要翻译： 提出了一种喷涂涂层，其中解决了通过喷涂的常规致密化不能解决的氧缺陷状态的问题，从而可以同时获得优异的电绝缘性和耐腐蚀性。 通过在半导体处理装置内等离子体喷涂形成的喷镀涂层包括金属氧化物或半导体氧化物，氧相对于构成氧化物（即氧（金属或半导体））的金属或半导体的组成比为 在化学计量组成的情况下不少于80％的组成比。

    Electrostatic chuck and production method therefor
    8.
    发明授权
    Electrostatic chuck and production method therefor 失效
    静电吸盘及其制作方法

    公开(公告)号：US07142405B2

    公开(公告)日：2006-11-28

    申请号：US10737816

    申请日：2003-12-18

    申请人： Shinya Miyaji ,  Shinji Saito

    发明人： Shinya Miyaji ,  Shinji Saito

    IPC分类号： H02N13/00

    CPC分类号： B23Q3/154 ,  Y10T279/23

    摘要： The present invention relates to an electrostatic chuck in which unification of a dielectric layer and a heating and cooling flange is omitted, whereby production cost can be decreased, resulting in having adequate corrosion resistance especially for high temperature processes for semiconductor. The electrostatic chuck comprises a stage and a dielectric layer formed on an upper surface of the stage by thermal spraying, and the dielectric layer is made of magnesium oxide.

    摘要翻译： 本发明涉及一种静电卡盘，其中省略了电介质层和加热和冷却法兰的统一，从而可以降低生产成本，从而具有足够的耐腐蚀性，特别是对于半导体的高温工艺。 静电卡盘包括通过热喷涂形成在台的上表面上的载物台和电介质层，并且电介质层由氧化镁制成。

    Heater unit for semiconductor processing
    9.
    发明授权
    Heater unit for semiconductor processing 有权
    半导体加工加热装置

    公开(公告)号：US06204486B1

    公开(公告)日：2001-03-20

    申请号：US09430516

    申请日：1999-10-29

    申请人： Takashi Masaki ,  Jun Futakuchiya ,  Kenzo Yasuda ,  Hidenori Ishiwata ,  Shinji Saito ,  Shinya Miyaji ,  Tsutomu Amakawa ,  Toshihiro Sugisawa

    发明人： Takashi Masaki ,  Jun Futakuchiya ,  Kenzo Yasuda ,  Hidenori Ishiwata ,  Shinji Saito ,  Shinya Miyaji ,  Tsutomu Amakawa ,  Toshihiro Sugisawa

    IPC分类号： H05B368

    CPC分类号： H01L21/67103 ,  H05B3/283 ,  H05B3/30

    摘要： In a heater unit, comprising a lower metallic base, an upper metallic base placed closely over an upper surface of said lower base, and a resistance heater wire received in a groove defined between opposing surfaces of said lower and upper bases, ceramic powder is filled in said groove to keep said heater wire at least away from a wall surface of said groove. Thus, the heater wire can be directly installed in the groove of the base without the intervention of a sheath pipe so that the heater wire can be bent in a desired dense pattern, and the heater unit can be heated both rapidly and uniformly. Also, the ceramic powder filled in the groove improves the heat transfer, and this even further enhances the these advantages of the present invention.

    摘要翻译： 在加热器单元中，包括下金属底座，紧靠所述下基座的上表面放置的上金属基座和容纳在所述下基座和上基座的相对表面之间限定的凹槽中的电阻加热丝，填充陶瓷粉末 在所述凹槽中，以使所述加热丝线至少远离所述凹槽的壁表面。 因此，加热器线可以直接安装在基座的槽中，而不需要护套管的介入，使得加热丝可以以期望的致密图案弯曲，并且可以快速均匀地加热加热器单元。 此外，填充在槽中的陶瓷粉末改善了热传递，并且这进一步增强了本发明的这些优点。

    INSULATION COATING METHOD FOR METAL BASE, INSULATION COATED METAL BASE, AND SEMICONDUCTOR MANUFACTURING APPARATUS USING THE SAME
    10.
    发明申请
    INSULATION COATING METHOD FOR METAL BASE, INSULATION COATED METAL BASE, AND SEMICONDUCTOR MANUFACTURING APPARATUS USING THE SAME 审中-公开
    金属基绝缘涂层方法，绝缘涂层金属基体及其半导体制造装置

    公开(公告)号：US20130052451A1

    公开(公告)日：2013-02-28

    申请号：US13661390

    申请日：2012-10-26

    申请人： Takamichi Sano ,  Shinya Miyaji ,  Shinji Saito

    发明人： Takamichi Sano ,  Shinya Miyaji ,  Shinji Saito

    IPC分类号： C23C4/10 ,  B32B15/04 ,  C23C4/18

    CPC分类号： C23C4/18 ,  C23C4/11 ,  C23C28/04 ,  Y10T428/24997

    摘要： An insulation coating method for a metal base comprises a thermal spraying step, an impregnation step, and a beam irradiation step. In the thermal spraying step, a first insulation coating is formed by thermally spraying a first metal oxide to the surface of the metal base. In the impregnation step, pores formed in the surface of the first insulation coating are impregnated with a sol that contains, as a dispersoid, a metal oxide, a hydrate of a metal oxide, or a metal hydroxide. In the beam irradiation step, a second insulation coating that is composed of a second metal oxide is formed by irradiating the first insulation coating and the sol with a high energy beam after the impregnation step.

    摘要翻译： 用于金属基底的绝缘涂覆方法包括热喷涂步骤，浸渍步骤和束照射步骤。 在热喷涂步骤中，通过将第一金属氧化物热喷涂到金属基底的表面上形成第一绝缘涂层。 在浸渍步骤中，在第一绝缘涂层的表面形成的孔被含有作为分散质的金属氧化物，金属氧化物的水合物或金属氢氧化物的溶胶浸渍。 在光束照射工序中，通过在浸渍工序后用高能量射束照射第一绝缘层和溶胶，形成由第二金属氧化物构成的第二绝缘膜。