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17 条记录 (耗时 0.016 秒)

    Object handling devices
    1.
    发明授权
    Object handling devices 失效
    对象处理设备

    公开(公告)号：US5584647A

    公开(公告)日：1996-12-17

    申请号：US006162

    申请日：1993-01-19

    申请人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

    发明人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

    IPC分类号： B25J9/06 ,  B25J9/04 ,  B25J21/00 ,  H01L21/677 ,  H01L21/687

    CPC分类号： H01L21/68707 ,  B25J21/005 ,  B25J9/042 ,  H01L21/67742 ,  Y10S414/135 ,  Y10T74/20207

    摘要： An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.

    摘要翻译： 物体处理装置连续地传送诸如半导体晶片的物体。 物体处理装置包括具有用于保持物体的手的第一和第二可折叠臂单元，用于选择性地延伸和收缩第一臂单元的第一驱动轴，用于选择性地延伸和收缩第二臂单元的第二驱动轴，用于 转动第一和第二臂单元，同时保持第一和第二臂单元处于相对位置关系，第一，第二和第三驱动轴彼此同轴设置;以及致动器机构，用于将第一和第二臂单元 第三驱动轴围绕它们自己的轴彼此独立。

    Object handling device
    2.
    发明授权
    Object handling device 失效
    对象处理装置

    公开(公告)号：US5083896A

    公开(公告)日：1992-01-28

    申请号：US406796

    申请日：1989-09-13

    申请人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

    发明人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

    IPC分类号： B25J9/06 ,  B25J9/04 ,  B25J21/00 ,  H01L21/677 ,  H01L21/687

    CPC分类号： H01L21/68707 ,  B25J21/005 ,  B25J9/042 ,  H01L21/67742 ,  Y10S414/135 ,  Y10T74/20207

    摘要： An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.

    摘要翻译： 物体处理装置连续地传送诸如半导体晶片的物体。 物体处理装置包括具有用于保持物体的手的第一和第二可折叠臂单元，用于选择性地延伸和收缩第一臂单元的第一驱动轴，用于选择性地延伸和收缩第二臂单元的第二驱动轴，用于 转动第一和第二臂单元，同时保持第一和第二臂单元处于相对位置关系，第一，第二和第三驱动轴彼此同轴设置;以及致动器机构，用于将第一和第二臂单元 第三驱动轴围绕它们自己的轴彼此独立。

    Surface treatment of silicone-based coating films
    3.
    发明授权
    Surface treatment of silicone-based coating films 失效
    硅胶涂层的表面处理

    公开(公告)号：US4868096A

    公开(公告)日：1989-09-19

    申请号：US92485

    申请日：1987-09-03

    申请人： Muneo Nakayama ,  Akira Uehara ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Isamu Hijikata ,  Mitsuaki Minato ,  Eiichi Kashiwagi

    发明人： Muneo Nakayama ,  Akira Uehara ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Isamu Hijikata ,  Mitsuaki Minato ,  Eiichi Kashiwagi

    IPC分类号： G03F7/11

    CPC分类号： G03F7/11

    摘要： The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.

    摘要翻译： 当将硅氧烷基涂膜在120℃的温度下进行等离子体处理时，可以改善基材上的硅酮基涂膜与外涂层（例如光致抗蚀剂层）的粘附性，而不引起裂纹。 在主要由氧组成的气体的气氛中。 等离子体处理的类似条件适用于当在包括以下步骤的步骤中需要对硅氧烷基涂膜进行图案化的步骤时，在其上形成光致抗蚀剂层，以光刻方法对光刻胶层进行图案化，选择性地蚀刻硅氧烷基涂膜 图案化的抗蚀剂层用作掩模并通过等离子体处理去除光致抗蚀剂层。

    Plasma reactor
    6.
    发明授权
    Plasma reactor 失效
    等离子体反应器

    公开(公告)号：US4946537A

    公开(公告)日：1990-08-07

    申请号：US371743

    申请日：1989-06-26

    申请人： Isamu Hijikata ,  Akira Uehara

    发明人： Isamu Hijikata ,  Akira Uehara

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

    CPC分类号： H01J37/32192 ,  H01J37/3266 ,  H05H1/46

    摘要： A plasma reactor includes a chamber, a specimen such as a wafer or the like supported in the chamber, a device for generating a plasma in the chamber, and at least one electromagnetic coil disposed coaxially around the chamber. The specimen is supported parallel to a magnetic field generated by the electromagnetic coil. High-density and high-energy charged particles in the plasma collide perpendicularly with the surface of the specimen to treat the specimen by way of etching or the like.

    摘要翻译： 等离子体反应器包括室，诸如支撑在室中的晶片等的样品，用于在室中产生等离子体的装置，以及围绕室同轴设置的至少一个电磁线圈。 样本被平行于由电磁线圈产生的磁场支撑。 等离子体中的高密度和高能带电粒子与样品的表面垂直地碰撞，以通过蚀刻等方式对样品进行处理。

    Automatic plasma processing device and heat treatment device
    7.
    发明授权
    Automatic plasma processing device and heat treatment device 失效
    自动等离子处理装置和热处理装置

    公开(公告)号：US4550239A

    公开(公告)日：1985-10-29

    申请号：US424503

    申请日：1982-09-27

    申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

    发明人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

    IPC分类号： B65G49/07 ,  H01L21/677 ,  B23K9/00

    CPC分类号： H01L21/67778 ,  H01L21/67781 ,  Y10S156/912 ,  Y10S414/137 ,  Y10S414/14

    摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.

    摘要翻译： 一种具有基本上垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片可以与等离子体同时处理。 自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒，用于从盒中一个接一个地取出晶片并用于馈送的馈送机构，用于从该盒子一个接一个地接收晶片的保持框架 进给机构并保持在其中的驱动机构，用于使保持框架上下移入等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机构的控制系统。 该装置的结构简化，并且可以自动并连续地处理大量的晶片，同时具有紧凑的结构。

    Plasma etching method
    9.
    发明授权
    Plasma etching method 失效
    等离子蚀刻法

    公开(公告)号：US4578559A

    公开(公告)日：1986-03-25

    申请号：US649164

    申请日：1984-09-10

    申请人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

    发明人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

    IPC分类号： C23F4/00 ,  C03C15/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00 ,  H01L21/306

    CPC分类号： H01J37/32431 ,  C03C15/00

    摘要： A plasma etching method employing a parallel-plate type plasma etching device which comprises a reaction chamber, a substantially plate-like ground electrode and a substantially plate-like counter electrode both disposed in parallel with each other within the reaction chamber. The method includes the steps of placing a material to be etched on the ground electrode and carrying out an electric discharge with a spacing between the electrodes being substantially 3 to 10 mm. Etching is performed exactly at a high speed in an anisotropic form without requiring a high degree of vacuum.

    摘要翻译： 使用平行板式等离子体蚀刻装置的等离子体蚀刻方法，其包括在反应室内彼此平行地设置的反应室，大致板状的接地电极和大致板状的对电极。 该方法包括以下步骤：将待蚀刻的材料放置在接地电极上，并执行电极间间隔大致为3至10mm的放电。 蚀刻完全以各向异性形式的高速完成，而不需要高度的真空度。

    Automatic plasma processing device and heat treatment device for batch treatment of workpieces
    10.
    发明授权
    Automatic plasma processing device and heat treatment device for batch treatment of workpieces 失效
    自动等离子处理装置和热处理装置，用于批量处理工件

    公开(公告)号：US4550242A

    公开(公告)日：1985-10-29

    申请号：US424287

    申请日：1982-09-27

    申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

    发明人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

    IPC分类号： H01L21/677 ,  B23K9/00

    CPC分类号： H01L21/67781 ,  H01L21/67778 ,  Y10S156/912 ,  Y10S414/137

    摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.

    摘要翻译： 一种具有基本垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片同时被等离子体处理。 该装置包括适于在其中容纳多个晶片的容器盒，用于将盒子进给到预定位置的进给机构，用于从放置在预定位置的盒子取出晶片的替换机构，可操作以接收 来自替换机构的晶片并保持在其中，用于将保持框架上下移入和移出等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制 上述机制。 自动等离子体处理装置具有简化的结构，并且自动并连续地处理大量晶片，同时紧凑。