Tunable Semiconductor Component Provided with a Current Barrier
    2.
    发明申请
    Tunable Semiconductor Component Provided with a Current Barrier 审中-公开
    带有电流屏障的可调谐半导体元件

    公开(公告)号:US20100084737A1

    公开(公告)日:2010-04-08

    申请号:US12087767

    申请日:2007-01-17

    IPC分类号: H01L23/525 H01L29/06

    摘要: This invention pertains to a color coatings blender apparatus to be used for color composition customization for the application of color coatings on 2D and 3D surfaces. The apparatus is comprised of a main body and interchangeable inserts all with central blender chambers and primary and secondary ports, and interchangeable spindles; the configurations of which are governed by coating technical characteristics. This invention integrates gradient specific programmable computer digital processes to function as internal editors, manipulate information and present the operator with multiple options and production overrides. This invention will make data analysis more interactive by utilizing existing external software applications as editors and expanding the process of visual communications for multiple purposes. While the blender apparatus, complete with external selectable appurtenances, can be used manually, it can also be combined with a programmable computer for producing physical gradient layers.

    摘要翻译: 本发明涉及用于在2D和3D表面上应用彩色涂层的颜色组合物定制的彩色涂料混合器装置。 该设备包括主体和可互换的插入件,全部具有中心搅拌器室和主要和次要端口以及可互换的主轴; 其结构由涂层技术特性决定。 本发明集成梯度专用可编程计算机数字处理功能,作为内部编辑器,操纵信息并向操作员呈现多种选项和生产覆盖。 本发明将通过利用现有的外部软件应用程序作为编辑器,并扩展视觉通信的过程,从而实现数据分析的更多交互。 虽然可以手动使用具有外部可选附件的搅拌机,但也可以与用于生产物理梯度层的可编程计算机组合使用。

    Method for modifying the impedance of semiconductor devices using a focused heating source
    4.
    发明授权
    Method for modifying the impedance of semiconductor devices using a focused heating source 有权
    使用聚焦加热源修改半导体器件的阻抗的方法

    公开(公告)号:US07217986B2

    公开(公告)日:2007-05-15

    申请号:US11088720

    申请日:2005-03-25

    IPC分类号: H01L29/00 H01L21/82

    摘要: A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.

    摘要翻译: 提供了一种用于使用聚焦加热源来调谐(即修改,改变)半导体部件或器件的阻抗的方法。 该方法可用于微调半导体组件或器件的阻抗,通过通过掺杂剂从较高掺杂剂浓度的相邻区域扩散通过熔融作用来改变掺杂剂浓度低的区域的掺杂剂分布(即增加掺杂剂浓度) 的聚焦加热源,例如激光。 本发明特别涉及激光器相对于用于创建之前不存在的导电链路和路径的电路的使用。 本发明更具体地涉及一种其中阻抗修改(即修整或调谐)可以有利地作为沿着间隙区域的长度的一个或多个导电桥的位置的函数来执行的装置。

    Method for modifying the impedance of semiconductor devices using a focused heating source
    5.
    发明申请
    Method for modifying the impedance of semiconductor devices using a focused heating source 有权
    使用聚焦加热源修改半导体器件的阻抗的方法

    公开(公告)号:US20050186766A1

    公开(公告)日:2005-08-25

    申请号:US11088720

    申请日:2005-03-25

    摘要: A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.

    摘要翻译: 提供了一种用于使用聚焦加热源来调谐(即修改,改变)半导体部件或器件的阻抗的方法。 该方法可用于微调半导体组件或器件的阻抗,通过通过掺杂剂从较高掺杂剂浓度的相邻区域扩散通过熔融作用来改变掺杂剂浓度低的区域的掺杂剂分布(即增加掺杂剂浓度) 的聚焦加热源,例如激光。 本发明特别涉及激光器相对于用于创建之前不存在的导电链路和路径的电路的使用。 本发明更具体地涉及一种其中阻抗修改(即修整或调谐)可以有利地作为沿着间隙区域的长度的一个或多个导电桥的位置的函数来执行的装置。