公开(公告)号：US20120112823A1

公开(公告)日：2012-05-10

申请号：US13288449

申请日：2011-11-03

申请人： Andrew Marshall

发明人： Andrew Marshall

IPC分类号： G05F3/02 ,  H01L21/02 ,  H01L27/06

CPC分类号： H01L27/1203 ,  G05F3/02 ,  H01C17/26 ,  H01L21/32055 ,  H01L21/32155 ,  H01L21/84 ,  H01L23/345 ,  H01L27/0629 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit with a matched transistor pair with a matching resistance heater coupled to each transistor of the matched transistor pair. A method for forming a matching resistance heater. A method for operating an SOI integrated circuit containing a matched transistor pair with a matching resistance heater coupled to each transistor of the matched transistor pair.

摘要翻译： 具有匹配晶体管对的集成电路，其具有耦合到匹配晶体管对的每个晶体管的匹配电阻加热器。 一种形成匹配电阻加热器的方法。 一种用于操作含有匹配电阻加热器的匹配晶体管对的SOI集成电路的方法，耦合到匹配晶体管对的每个晶体管。

公开(公告)号：US07332402B2

公开(公告)日：2008-02-19

申请号：US10846210

申请日：2004-05-14

申请人： William Freeman

发明人： William Freeman

IPC分类号： H01L21/20 ,  H01L21/00

CPC分类号： H01C17/06586 ,  H01C17/26 ,  H05K1/167 ,  H05K2203/107 ,  H05K2203/1142 ,  H05K2203/171

摘要： Methods for adjusting the bulk material properties of manufactured components, such as resistors, thermistors, varistors, capacitors, resonators, oscillators, and optical components. Adjustment of the resistance of a resistor can be achieved by directing a high energy beam, such as an ultraviolet beam, onto a resistor formed from a matrix component and an embedded conductive component. The high energy beam adjusts the resistivity of the resistor material substantially without ablating the matrix component by affecting the matrix component, the conductive component, or both. Because of the lack of ablation, the material having a property to be adjusted can be a sub-layer in a laminated structure, with the high energy beam being directed through other layers formed thereon.

摘要翻译： 用于调节制造部件的体材料性质的方法，例如电阻器，热敏电阻器，变阻器，电容器，谐振器，振荡器和光学部件。 可以通过将诸如紫外光束的高能束引导到由矩阵元件和嵌入的导电元件形成的电阻上来实现电阻器的电阻的调节。 高能束通过影响基体组分，导电组分或两者而基本上不调节基质组分，从而调节电阻材料的电阻率。 由于缺乏消融，具有待调整性质的材料可以是层叠结构中的子层，高能束被引导通过其上形成的其它层。

公开(公告)号：US20060046418A1

公开(公告)日：2006-03-02

申请号：US10711130

申请日：2004-08-26

申请人： Douglas Coolbaugh ,  Heidi Greer ,  Robert Rassel

发明人： Douglas Coolbaugh ,  Heidi Greer ,  Robert Rassel

IPC分类号： H01L21/20

CPC分类号： H01L21/2652 ,  H01C17/26 ,  H01C17/265 ,  H01L28/20

摘要： A method of fabricating a resistor in which the resistance value of the resistor is measured and adjusted after silicidation is provided. The method of the present invention begins with first providing at least one resistor, e.g., polysilicon, having a resistance value on a surface of a semiconductor substrate. The at least one resistor has been subjected to a silicidation process. Next, the resistance value of the at least one resistor is measured to determine the actual resistance of the resistor after silicidation. After the measuring step, the resistance of the resistor is adjusted to achieve a desired resistance value. The adjusting may include a post silicidation rapid thermal anneal and/or a post silicidation ion implantation and a low temperature rapid thermal anneal step.

摘要翻译： 提供了在硅化后测量和调整电阻器的电阻值的电阻器的制造方法。 本发明的方法首先开始在半导体衬底的表面上提供具有电阻值的至少一个电阻器，例如多晶硅。 至少一个电阻器已进行硅化处理。 接下来，测量至少一个电阻器的电阻值，以确定硅化后电阻器的实际电阻。 在测量步骤之后，调整电阻器的电阻以获得所需的电阻值。 调整可以包括后硅化快速热退火和/或后硅化离子注入和低温快速热退火步骤。

公开(公告)号：US3420706A

公开(公告)日：1969-01-07

申请号：US37730364

申请日：1964-06-23

申请人： BELL TELEPHONE LABOR INC

发明人： KUO CHARLES C Y

IPC分类号： H01B1/00 ,  H01C17/26 ,  B44D1/20 ,  C23C11/00

CPC分类号： H01C17/265 ,  H01B1/00 ,  H01C17/26 ,  Y10S428/901

公开(公告)号：US3341445A

公开(公告)日：1967-09-12

申请号：US39410464

申请日：1964-09-01

申请人： WESTERN ELECTRIC CO

发明人： GERHARD ALLEN R

IPC分类号： C25D21/12 ,  G01R27/02 ,  H01C17/26

CPC分类号： H01C17/262 ,  C25D21/12 ,  G01R27/02 ,  H01C17/26

公开(公告)号：US3159556A

公开(公告)日：1964-12-01

申请号：US7469160

申请日：1960-12-08

申请人： BELL TELEPHONE LABOR INC

发明人： MCLEAN DAVID A ,  PENDERGAST WARREN J

IPC分类号： H01B1/00 ,  H01C17/26 ,  H01L49/02 ,  H05K7/18

CPC分类号： H05K7/18 ,  H01B1/00 ,  H01C17/26 ,  H01C17/262 ,  H01L49/02 ,  Y10T29/49082

公开(公告)号：US09793181B2

公开(公告)日：2017-10-17

申请号：US14659051

申请日：2015-03-16

申请人： STMicroelectronics (Grenoble 2) SAS

发明人： Vratislav Michal

IPC分类号： H01C10/50 ,  H01L21/66 ,  H01C17/22 ,  H01C17/26

CPC分类号： H01L22/14 ,  H01C17/22 ,  H01C17/26

摘要： A method for calibrating a resistance value comprises the steps of measuring a value of a reference capacitor, and adjusting a variable resistor based on the measured value of the reference capacitor. The method may more specifically comprise the steps of directing a constant current through the reference capacitor during a reference time interval; after the reference time interval, directing the constant current through the variable resistor; and varying the variable resistor value progressively by varying a control signal until a voltage of the variable resistor reaches a voltage of the reference capacitor.

公开(公告)号：US20160074953A1

公开(公告)日：2016-03-17

申请号：US14786298

申请日：2014-04-18

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Jean-Yves Bigot ,  Mircea Vomir ,  Michéle Albrecht

IPC分类号： B23K9/08 ,  H01C10/00 ,  B23K9/09

CPC分类号： B23K9/08 ,  B23K9/091 ,  G11B9/04 ,  G11B13/045 ,  H01C10/00 ,  H01C17/26

摘要： A method for modifying the value of an electrical resistance (30), comprising a ferromagnetic material (31) having a first magnetization direction, comprising the following steps of: illuminating, by a first LASER beam (14), a first area (32) of the ferromagnetic material (31), so that this area is heated at a temperature equal to or higher than the Curie temperature of the ferromagnetic material (31); applying in the first area (32) a first magnetic field having a direction opposite to the first magnetization direction of the ferromagnetic material (31); reducing the energy brought by the first LASER beam (14) to the first area (32) in order to enable the first area to be cooled to form a first controlled magnetic domain (36C).

摘要翻译： 一种用于修改包括具有第一磁化方向的铁磁材料（31）的电阻值（30）的方法，包括以下步骤：通过第一激光束（14）照射第一区域（32）， 使得该区域在等于或高于铁磁材料（31）的居里温度的温度下被加热; 在第一区域（32）中施加具有与铁磁材料（31）的第一磁化方向相反的方向的第一磁场; 将第一激光束（14）所带来的能量降低到第一区域（32），以使第一区域能够被冷却以形成第一受控磁畴（36C）。

公开(公告)号：US20050186751A1

公开(公告)日：2005-08-25

申请号：US10653777

申请日：2003-09-02

申请人： Eric Beach ,  Walter Meinel ,  Eric Hoyt

发明人： Eric Beach ,  Walter Meinel ,  Eric Hoyt

IPC分类号： B23K26/18 ,  H01C17/242 ,  H01C17/26 ,  H01L21/02 ,  H01L21/20 ,  H01L21/3205 ,  H01L21/4763 ,  H01L29/00

CPC分类号： H01L28/20 ,  B23K26/18 ,  H01C17/242 ,  H01C17/26

摘要： A method and structure for controlling the surface properties in the dielectric layers in a thin film component can be provided for improving the trimming process of thin film element. A metal fill is configured with a uniform fill pattern beneath an array of thin film resistors, and can comprise a plurality of smaller features or peaks providing a finer fill pattern that improves the control of the topology of the dielectric layers. The fill pattern can be configured in various manners, such as fill patterns parallel to the thin film resistor, fill patterns perpendicular to the thin film resistor, or fill patterns comprising a checkerboard-like configuration. The method and device for controlling the dielectric layers can also provide for a reduction in the interferences that can be caused by reflecting back of the focused energy by comprising a dispersion arrangement configured to provide dispersive grading of the laser energy below the thin film resistor and thus reduce the interaction of reflected energy with the incident laser beam. The method also improves the contrast of the laser alignment targets with respect to their background.

公开(公告)号：US20040214452A1

公开(公告)日：2004-10-28

申请号：US10846210

申请日：2004-05-14

发明人： William Freeman

IPC分类号： H01L021/26 ,  H01L021/324

CPC分类号： H01C17/06586 ,  H01C17/26 ,  H05K1/167 ,  H05K2203/107 ,  H05K2203/1142 ,  H05K2203/171

摘要： Methods for adjusting the bulk material properties of manufactured components, such as resistors, thermistors, varistors, capacitors, resonators, oscillators, and optical components. Adjustment of the resistance of a resistor can be achieved by directing a high energy beam, such as an ultraviolet beam, onto a resistor formed from a matrix component and an embedded conductive component. The high energy beam adjusts the resistivity of the resistor material substantially without ablating the matrix component by affecting the matrix component, the conductive component, or both. Because of the lack of ablation, the material having a property to be adjusted can be a sub-layer in a laminated structure, with the high energy beam being directed through other layers formed thereon

摘要翻译： 用于调节制造部件的体材料性质的方法，例如电阻器，热敏电阻器，变阻器，电容器，谐振器，振荡器和光学部件。 可以通过将诸如紫外光束的高能束引导到由矩阵元件和嵌入的导电元件形成的电阻上来实现电阻器的电阻的调节。 高能束通过影响基体组分，导电组分或两者而基本上不调节基质组分，从而调节电阻材料的电阻率。 由于缺乏消融，具有待调整性质的材料可以是层压结构中的子层，其中高能束被引导通过其上形成的其它层