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公开(公告)号：US5479033A
公开(公告)日：1995-12-26
申请号：US250088
申请日：1994-05-27
IPC分类号： H01L27/06 , H01L29/80 , H01L31/0376 , H01L31/072
CPC分类号： H01L27/0605 , H01L29/802
摘要： A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.
摘要翻译： 公开了一对互补的化合物半导体结异质结场场效应晶体管及其制造方法。 p沟道结异质结场场效应晶体管使用应变层来分离价带的简并性，大大提高了空穴迁移率和速度。 去除应变层后，n通道器件由兼容的工艺形成。 以这种方式，可以独立优化两种类型的晶体管。 离子注入用于形成两种类型的互补器件的晶体管有源和隔离区域。 本发明用于开发低功率，高速数字集成电路。
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公开(公告)号：US4947223A
公开(公告)日：1990-08-07
申请号：US91560
申请日：1987-08-31
CPC分类号： G02F1/218 , B82Y20/00 , G02F3/024 , H01S5/18361 , H01S5/041 , H01S5/0614 , H01S5/34313
摘要： A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.
摘要翻译： 包含许多半导体材料的薄交变层的半导体高反射器是电可调谐的，并且可以用作法布里 - 珀罗（Fabry-Perot）配置中的不耐温半导体激光器。
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公开(公告)号：US4829020A
公开(公告)日：1989-05-09
申请号：US111488
申请日：1987-10-23
IPC分类号： C30B23/02
CPC分类号： C30B23/02 , Y10S148/003 , Y10S148/012 , Y10S148/065 , Y10S148/11 , Y10S438/974 , Y10T428/12576
摘要： During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.
摘要翻译： 在通过外延工艺生长化合物半导体期间，通常将基底安装到载体上。 在模块化射束外延下，使用铟作为焊料进行安装。 该方法具有两个缺点：铟与基板反应，并且难以均匀地湿润大直径基板的背面。 通过用碳化钨或碳化钨和金的薄层溅射涂覆基板的背面已经成功地克服了这两个问题。 除了与高质量半导体外延层的生长相容外，该涂层在用于化合物半导体的所有标准基板清洗蚀刻剂中也是惰性的，并且在辐射加热中提供均匀的能量分布。
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4.发明授权Resonant tunneling device with two-dimensional quantum well emitter and base layers 失效具有二维量子阱发射器和基极层的谐振隧道装置
公开(公告)号：US5825049A
公开(公告)日：1998-10-20
申请号：US728003
申请日：1996-10-09
IPC分类号： H01L21/78 , H01L29/772 , H01L29/06 , H01L31/0328 , H01L31/072 , H01L31/109
CPC分类号： B82Y10/00 , H01L21/78 , H01L29/772
摘要： A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.
摘要翻译： 提出了一种双电子层隧穿装置。 电子从二维发射极层隧穿到二维隧道层，并以较低的电压继续行进到集电极。 发射极层被隔离蚀刻，耗尽栅极或离子注入中断，以防止电子从源极沿着发射极行进到漏极。 收集器类似地通过背栅，隔离蚀刻或离子注入来中断。 当该器件用作晶体管时，添加控制栅极以控制发射极层的允许的能量状态。 隧道门可以凹入以改变设备的工作范围并允许集成的互补设备。 还阐述了使用环氧键和停止蚀刻（EBASE），背栅或生长后植入的预生长植入的方法来形成装置。
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