公开(公告)号：US20110206843A1

公开(公告)日：2011-08-25

申请号：US12967381

申请日：2010-12-14

申请人： Alex Gurary ,  Mikhail Belousov ,  Vadim Boguslavskiy ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Vadim Boguslavskiy ,  Bojan Mitrovic

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC分类号： H01L22/26 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/68785 ,  H01L21/68792

摘要： Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

摘要翻译： 晶片处理工艺和设备设置有晶片载体，其布置成保持晶片并将填充气体注入到晶片和晶片载体之间的间隙中。 该装置被布置成改变填充气体的组成，流速或两者，以便抵消晶片的不期望的温度不均匀图案。

公开(公告)号：US09324590B2

公开(公告)日：2016-04-26

申请号：US12967381

申请日：2010-12-14

申请人： Alex Gurary ,  Mikhail Belousov ,  Vadim Boguslavskiy ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Vadim Boguslavskiy ,  Bojan Mitrovic

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/687

CPC分类号： H01L22/26 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/68785 ,  H01L21/68792

摘要： Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

摘要翻译： 晶片处理工艺和设备设置有晶片载体，其布置成保持晶片并将填充气体注入到晶片和晶片载体之间的间隙中。 该装置被布置成改变填充气体的组成，流速或两者，以便抵消晶片的不期望的温度不均匀图案。

公开(公告)号：US08937000B2

公开(公告)日：2015-01-20

申请号：US13128163

申请日：2009-11-06

申请人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  H01L21/26 ,  H01L21/42 ,  H01L21/302 ,  H01L21/461 ,  H01L21/31 ,  H01L21/469 ,  C23C16/455 ,  C23C16/30 ,  C23C16/458 ,  C23C16/46 ,  H01L21/205

CPC分类号： H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

摘要翻译： 化学气相沉积反应器及方法。 将反应性气体，例如包括III族金属源和V族金属源的气体引入旋转盘式反应器的室（10）中并且向下引导到晶片载体（32）和基板（40） 保持在升高的基板温度，通常高于约400℃，通常为约700-1100℃，以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃的入口温度下引入反应器中，最优选的是约100℃-350℃。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。

公开(公告)号：US08895107B2

公开(公告)日：2014-11-25

申请号：US12291350

申请日：2008-11-06

申请人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/30 ,  C23C16/458

CPC分类号： H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

摘要翻译： 化学气相沉积反应器及方法。 诸如包括III族金属源和V族金属源的气体的反应性气体被引入到旋转圆盘式反应器中并且被向下引导到晶片载体和基板上，所述晶片载体和基板保持在升高的基板温度，通常高于约400° 通常约700-1100℃以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃，最优选约100℃-250℃的入口温度下被引入反应器中。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。

公开(公告)号：US20120040514A1

公开(公告)日：2012-02-16

申请号：US13128163

申请日：2009-11-06

申请人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC分类号： H01L21/205 ,  C23C16/52

CPC分类号： H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

摘要翻译： 化学气相沉积反应器及方法。 将反应性气体，例如包括III族金属源和V族金属源的气体引入旋转盘式反应器的室（10）中并且向下引导到晶片载体（32）和基板（40） 保持在升高的基板温度，通常高于约400℃，通常为约700-1100℃，以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃的入口温度下引入反应器中，最优选的是约100℃-350℃。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。

公开(公告)号：US20100112216A1

公开(公告)日：2010-05-06

申请号：US12291350

申请日：2008-11-06

申请人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC分类号： C23C16/44 ,  C23C16/54

CPC分类号： H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

摘要翻译： 化学气相沉积反应器及方法。 诸如包括III族金属源和V族金属源的气体的反应性气体被引入到旋转圆盘式反应器中并且被向下引导到晶片载体和基板上，所述晶片载体和基板保持在升高的基板温度，通常高于约400° 通常约700-1100℃以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃，最优选约100℃-250℃的入口温度下被引入反应器中。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。

公开(公告)号：US08636847B2

公开(公告)日：2014-01-28

申请号：US13606130

申请日：2012-09-07

申请人： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

发明人： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： C30B25/14 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4584

摘要： A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.

摘要翻译： 用于化学气相沉积反应器（10）的流入口元件（22）由多个细长管状元件（64,65）形成，所述多个细长管状元件（64,65）在横向于上游到下游方向的平面中彼此并排延伸 反应堆。 管状元件具有用于沿下游方向喷射气体的入口。 晶片载体（14）围绕上游到下游轴线旋转。 气体分布元件可以提供相对于延伸穿过轴线的中间平面（108）不对称的气体分布图案。

公开(公告)号：US20100143588A1

公开(公告)日：2010-06-10

申请号：US12631079

申请日：2009-12-04

申请人： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

发明人： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C30B25/14 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4584

摘要： A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.

摘要翻译： 用于化学气相沉积反应器（10）的流入口元件（22）由多个细长管状元件（64,65）形成，所述多个细长管状元件（64,65）在横向于上游到下游方向的平面中彼此并排延伸 反应堆。 管状元件具有用于沿下游方向喷射气体的入口。 晶片载体（14）围绕上游到下游轴线旋转。 气体分布元件可以提供相对于延伸穿过轴线的中间平面（108）不对称的气体分布图案。

公开(公告)号：US20120325151A1

公开(公告)日：2012-12-27

申请号：US13606130

申请日：2012-09-07

申请人： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

发明人： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

IPC分类号： C23C16/458 ,  B05B1/00

CPC分类号： C30B25/14 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4584

摘要： A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.

摘要翻译： 用于化学气相沉积反应器（10）的流入口元件（22）由多个细长管状元件（64,65）形成，所述多个细长管状元件（64,65）在横向于上游到下游方向的平面中彼此并排延伸 反应堆。 管状元件具有用于沿下游方向喷射气体的入口。 晶片载体（14）围绕上游到下游轴线旋转。 气体分布元件可以提供相对于延伸穿过轴线的中间平面（108）不对称的气体分布图案。

公开(公告)号：US08303713B2

公开(公告)日：2012-11-06

申请号：US12631079

申请日：2009-12-04

申请人： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

发明人： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

CPC分类号： C30B25/14 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4584

摘要： A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.

摘要翻译： 用于化学气相沉积反应器（10）的流入口元件（22）由多个细长管状元件（64,65）形成，所述多个细长管状元件（64,65）在横向于上游到下游方向的平面中彼此并排延伸 反应堆。 管状元件具有用于沿下游方向喷射气体的入口。 晶片载体（14）围绕上游到下游轴线旋转。 气体分布元件可以提供相对于延伸穿过轴线的中间平面（108）不对称的气体分布图案。