公开(公告)号：US08802525B2

公开(公告)日：2014-08-12

申请号：US13205316

申请日：2011-08-08

申请人： Alex Schrinsky ,  Anish Khandekar ,  Pavan Aella ,  Niraj B. Rana

发明人： Alex Schrinsky ,  Anish Khandekar ,  Pavan Aella ,  Niraj B. Rana

IPC分类号： H01L21/336

CPC分类号： H01L27/11556 ,  H01L21/32134 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

摘要： Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.

摘要翻译： 公开了包括选择性地蚀刻扩散区域以在半导体材料中形成凹槽的方法，以及在凹槽中形成电荷存储结构。 公开了其他实施例。

公开(公告)号：US20130040429A1

公开(公告)日：2013-02-14

申请号：US13205316

申请日：2011-08-08

申请人： Alex Schrinsky ,  Anish Khandekar ,  Pavan Aella ,  Niraj B. Rana

发明人： Alex Schrinsky ,  Anish Khandekar ,  Pavan Aella ,  Niraj B. Rana

IPC分类号： H01L21/336 ,  H01L21/306

CPC分类号： H01L27/11556 ,  H01L21/32134 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

摘要： Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.

摘要翻译： 公开了包括选择性地蚀刻扩散区域以在半导体材料中形成凹槽的方法，以及在凹槽中形成电荷存储结构。 公开了另外的实施例。

公开(公告)号：US07368416B2

公开(公告)日：2008-05-06

申请号：US11486525

申请日：2006-07-13

申请人： Kevin R. Shea ,  Niraj B. Rana

发明人： Kevin R. Shea ,  Niraj B. Rana

IPC分类号： H01L21/461

CPC分类号： H01L21/32134 ,  H01L28/90

摘要： Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.

摘要翻译： 在高方面，相对于硅，二氧化硅，氮化硅和掺杂的氧化硅中的一种或多种选择性地蚀刻含金属材料（例如，可以包括例如氮化钛的金属氮化物）的各种方法 比例结构具有高蚀刻速率。 蚀刻可以与臭氧，氢氧化铵，四甲基氢氧化铵，盐酸和/或过硫酸盐结合使用过氧化氢。 本发明还可以利用臭氧与过氧化氢的组合，和/或与一种或多种氢氧化铵，四甲基氢氧化铵和过硫酸盐组合使用。 本发明还可以使用具有或不具有过硫酸盐的臭氧，过氧化氢和HCl。 本发明也可单独使用过氧化氢和磷酸盐，或与过硫酸盐组合使用。

公开(公告)号：US20100221916A1

公开(公告)日：2010-09-02

申请号：US12778043

申请日：2010-05-11

申请人： Niraj B. Rana ,  Kevin R. Shea ,  Janos Fucsko

发明人： Niraj B. Rana ,  Kevin R. Shea ,  Janos Fucsko

IPC分类号： H01L21/306 ,  C23G1/02

CPC分类号： H01L21/31111 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31116 ,  H01L27/0629 ,  H01L28/40 ,  Y10S438/963

摘要： The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10−6 are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more carboxylic acids can be utilized. Exemplary carboxylic acids include trichloroacetic acid, maleic acid, and citric acid.

摘要翻译： 本发明包括在氧化物（例如二氧化硅或掺杂的二氧化硅）的蚀刻期间利用具有至少1×10-6的酸性解离常数的羧酸的一种或多种组分的方法。 可以使用两种或更多种羧酸。 示例性的羧酸包括三氯乙酸，马来酸和柠檬酸。

公开(公告)号：US07713885B2

公开(公告)日：2010-05-11

申请号：US11127944

申请日：2005-05-11

申请人： Niraj B. Rana ,  Kevin R. Shea ,  Janos Fucsko

发明人： Niraj B. Rana ,  Kevin R. Shea ,  Janos Fucsko

IPC分类号： H01L21/31

CPC分类号： H01L21/31111 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31116 ,  H01L27/0629 ,  H01L28/40 ,  Y10S438/963

摘要： The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10−6 are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more carboxylic acids can be utilized. Exemplary carboxylic acids include trichloroacetic acid, maleic acid, and citric acid.

摘要翻译： 本发明包括在氧化物（例如二氧化硅或掺杂的二氧化硅）的蚀刻期间利用具有至少1×10-6的酸性解离常数的羧酸的一种或多种组分的方法。 可以使用两种或更多种羧酸。 示例性的羧酸包括三氯乙酸，马来酸和柠檬酸。

公开(公告)号：US07244682B2

公开(公告)日：2007-07-17

申请号：US10841706

申请日：2004-05-06

申请人： Kevin R. Shea ,  Niraj B. Rana

发明人： Kevin R. Shea ,  Niraj B. Rana

IPC分类号： H01L21/302

CPC分类号： H01L21/32134 ,  H01L28/90

摘要： Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.

摘要翻译： 在高方面，相对于硅，二氧化硅，氮化硅和掺杂的氧化硅中的一种或多种选择性地蚀刻含金属材料（例如，可以包括例如氮化钛的金属氮化物）的各种方法 比例结构具有高蚀刻速率。 蚀刻可以与臭氧，氢氧化铵，四甲基氢氧化铵，盐酸和/或过硫酸盐结合使用过氧化氢。 本发明还可以利用臭氧与过氧化氢的组合，和/或与一种或多种氢氧化铵，四甲基氢氧化铵和过硫酸盐组合使用。 本发明还可以使用具有或不具有过硫酸盐的臭氧，过氧化氢和HCl。 本发明也可单独使用过氧化氢和磷酸盐，或与过硫酸盐组合使用。

公开(公告)号：US07683022B2

公开(公告)日：2010-03-23

申请号：US11486608

申请日：2006-07-13

申请人： Kevin R. Shea ,  Niraj B. Rana

发明人： Kevin R. Shea ,  Niraj B. Rana

IPC分类号： H01L21/02

CPC分类号： H01L21/32134 ,  H01L28/90

摘要： Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.

摘要翻译： 在高方面，相对于硅，二氧化硅，氮化硅和掺杂的氧化硅中的一种或多种选择性地蚀刻含金属材料（例如，可以包括例如氮化钛的金属氮化物）的各种方法 比例结构具有高蚀刻速率。 蚀刻可以与臭氧，氢氧化铵，四甲基氢氧化铵，盐酸和/或过硫酸盐结合使用过氧化氢。 本发明还可以利用臭氧与过氧化氢的组合，和/或与一种或多种氢氧化铵，四甲基氢氧化铵和过硫酸盐组合使用。 本发明还可以使用具有或不具有过硫酸盐的臭氧，过氧化氢和HCl。 本发明也可单独使用过氧化氢和磷酸盐，或与过硫酸盐组合使用。

公开(公告)号：US07683020B2

公开(公告)日：2010-03-23

申请号：US11486592

申请日：2006-07-13

申请人： Kevin R. Shea ,  Niraj B. Rana

发明人： Kevin R. Shea ,  Niraj B. Rana

IPC分类号： H01L21/02

CPC分类号： H01L21/32134 ,  H01L28/90

摘要： Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.

公开(公告)号：US20090305511A1

公开(公告)日：2009-12-10

申请号：US12136661

申请日：2008-06-10

申请人： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashani Raghu ,  Kyle Grant

发明人： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashani Raghu ,  Kyle Grant

IPC分类号： H01L21/306

CPC分类号： H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

摘要： Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

摘要翻译： 一些实施方案包括处理半导体衬底的方法。 衬底可以暴露于连续变化的一个或多个条件。 条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。 可以通过将半导体衬底放置在流动的冲洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。 供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。 可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。

公开(公告)号：US07557013B2

公开(公告)日：2009-07-07

申请号：US11402018

申请日：2006-04-10

申请人： Vishwanath Bhat ,  Niraj B. Rana ,  Shyam Surthi

发明人： Vishwanath Bhat ,  Niraj B. Rana ,  Shyam Surthi

IPC分类号： H01L21/20 ,  H01L21/8242 ,  H01L21/76

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Conductive material received over the trench sidewall portion is covered with a silicon nitride-comprising layer which less than fills remaining trench volume. The insulative material within the array area and the silicon nitride-comprising layer are etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area and to expose the conductive material within the trench. The conductive material within the array area is incorporated into a plurality of capacitors.

摘要翻译： 形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。 阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。 中间区域包括沟槽。 导电材料形成在开口内并抵靠沟槽的侧壁部分，以小于完全填充沟槽。 接收在沟槽侧壁部分上的导电材料覆盖有少于填充剩余沟槽体积的含氮化硅的层。 阵列区域内的绝缘材料和含氮化硅的层用液体蚀刻溶液进行蚀刻，该液体蚀刻溶液有效地暴露阵列区域内的导电材料的外侧壁部分，并露出沟槽内的导电材料。 阵列区域内的导电材料被并入多个电容器中。