公开(公告)号：US20090305511A1

公开(公告)日：2009-12-10

申请号：US12136661

申请日：2008-06-10

申请人： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashani Raghu ,  Kyle Grant

发明人： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashani Raghu ,  Kyle Grant

IPC分类号： H01L21/306

CPC分类号： H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

摘要： Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

摘要翻译： 一些实施方案包括处理半导体衬底的方法。 衬底可以暴露于连续变化的一个或多个条件。 条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。 可以通过将半导体衬底放置在流动的冲洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。 供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。 可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。

公开(公告)号：US08492288B2

公开(公告)日：2013-07-23

申请号：US12136661

申请日：2008-06-10

申请人： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

发明人： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

IPC分类号： H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  B08B3/00

CPC分类号： H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

摘要： Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

公开(公告)号：US08026542B2

公开(公告)日：2011-09-27

申请号：US11512004

申请日：2006-08-29

申请人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

发明人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

IPC分类号： H01L27/108

CPC分类号： H01L23/48 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/2855 ,  H01L21/32134 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for forming memory devices and integrated circuitry, for example, DRAM circuitry, structures and devices resulting from such methods, and systems that incorporate the devices are provided.

摘要翻译： 提供了用于形成存储器件和集成电路的方法，例如由这些方法产生的DRAM电路，结构和器件，以及结合该器件的系统。

公开(公告)号：US20060289918A1

公开(公告)日：2006-12-28

申请号：US11512004

申请日：2006-08-29

申请人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

发明人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

IPC分类号： H01L29/94 ,  H01L23/48

CPC分类号： H01L23/48 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/2855 ,  H01L21/32134 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for forming memory devices and integrated circuitry, for example, DRAM circuitry, structures and devices resulting from such methods, and systems that incorporate the devices are provided.

摘要翻译： 提供了用于形成存储器件和集成电路的方法，例如由这些方法产生的DRAM电路，结构和器件，以及结合该器件的系统。

公开(公告)号：US07605033B2

公开(公告)日：2009-10-20

申请号：US10932327

申请日：2004-09-01

申请人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

发明人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

IPC分类号： H01L21/8242

CPC分类号： H01L23/48 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/2855 ,  H01L21/32134 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for forming memory devices and integrated circuitry, for example, DRAM circuitry, structures and devices resulting from such methods, and systems that incorporate the devices are provided. In some embodiments, the method includes forming a metallized contact to an active area in a silicon substrate in a peripheral circuitry area and a metallized contact to a polysilicon plug in a memory cell array area by forming a first opening to expose the active area at the peripheral circuitry area, chemical vapor depositing a titanium layer over the dielectric layer and into the first opening to form a titanium silicide layer over the active area in the silicon substrate, removing the titanium layer selective to the titanium silicide layer, forming a second opening in the dielectric layer to expose the polysilicon plug at the memory cell array area, and forming metal contacts within the first and second openings to the active area and the exposed polysilicon plug.

摘要翻译： 提供了用于形成存储器件和集成电路的方法，例如由这些方法产生的DRAM电路，结构和器件，以及结合该器件的系统。 在一些实施例中，该方法包括在外围电路区域中的硅衬底中的有源区域上形成金属化接触，以及通过形成第一开口以在存储单元阵列区域中暴露有源区域的金属化接触到多晶硅插塞 外围电路区域，在电介质层上化学气相沉积钛层并进入第一开口以在硅衬底的有源区域上形成钛硅化物层，去除对硅化钛层有选择性的钛层，形成第二开口 所述电介质层在所述存储单元阵列区域处露出所述多晶硅插塞，以及在所述第一和第二开口内形成到所述有源区域和暴露的多晶硅插塞的金属触点。

公开(公告)号：US20110244404A1

公开(公告)日：2011-10-06

申请号：US13163515

申请日：2011-06-17

申请人： Kevin J. Torek ,  Todd R. Abbott ,  Sandra Tagg ,  Amy Weatherly

发明人： Kevin J. Torek ,  Todd R. Abbott ,  Sandra Tagg ,  Amy Weatherly

IPC分类号： G03F7/20

CPC分类号： H01L21/32139 ,  G03F7/16 ,  G03F7/322 ,  H01L21/0271

摘要： A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.

公开(公告)号：US20110159698A2

公开(公告)日：2011-06-30

申请号：US11510010

申请日：2006-08-24

申请人： Kevin Torek ,  Todd Abbott ,  Sandra Tagg ,  Amy Weatherly

发明人： Kevin Torek ,  Todd Abbott ,  Sandra Tagg ,  Amy Weatherly

IPC分类号： H01L21/302

CPC分类号： H01L21/32139 ,  G03F7/16 ,  G03F7/322 ,  H01L21/0271

摘要： A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.

摘要翻译： 光致抗蚀剂处理方法包括用含硫物质处理基材。 将正色调光致抗蚀剂施加在经处理的基底上并与其接触。 该方法包括将光致抗蚀剂的一部分选择性地暴露于光化能量并显影光致抗蚀剂以去除暴露部分并在基底上形成光刻胶图案。 与含有硫物质的处理相比，与不进行处理的剩余光致抗蚀剂相比，减少了用于去除的残留光致抗蚀剂的量。

公开(公告)号：US08685625B2

公开(公告)日：2014-04-01

申请号：US13622574

申请日：2012-09-19

申请人： Kevin J. Torek ,  Todd R. Abbott ,  Sandra Tagg ,  Amy Weatherly

发明人： Kevin J. Torek ,  Todd R. Abbott ,  Sandra Tagg ,  Amy Weatherly

IPC分类号： G03F7/26

CPC分类号： H01L21/32139 ,  G03F7/16 ,  G03F7/322 ,  H01L21/0271

摘要： A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.

摘要翻译： 光致抗蚀剂处理方法包括用含硫物质处理基材。 将正色调光致抗蚀剂施加在经处理的基底上并与其接触。 该方法包括将光致抗蚀剂的一部分选择性地暴露于光化能量并显影光致抗蚀剂以去除暴露部分并在基底上形成光刻胶图案。 与含有硫物质的处理相比，与不进行处理的剩余光致抗蚀剂相比，减少了用于去除的残留光致抗蚀剂的量。

公开(公告)号：US20060046398A1

公开(公告)日：2006-03-02

申请号：US10932327

申请日：2004-09-01

申请人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

发明人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

IPC分类号： H01L21/336 ,  H01L21/8242 ,  H01L21/8238

CPC分类号： H01L23/48 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/2855 ,  H01L21/32134 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for forming memory devices and integrated circuitry, for example, DRAM circuitry, structures and devices resulting from such methods, and systems that incorporate the devices are provided.

公开(公告)号：US08580666B2

公开(公告)日：2013-11-12

申请号：US13246146

申请日：2011-09-27

申请人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

发明人： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

IPC分类号： H01L21/3205 ,  H01L21/8242 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L27/108

CPC分类号： H01L23/48 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/2855 ,  H01L21/32134 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for forming memory devices and integrated circuitry, for example, DRAM (dynamic random access memory) circuitry, structures and devices resulting from such methods, and systems that incorporate the devices are provided.

摘要翻译： 提供了用于形成存储器件和集成电路的方法，例如DRAM（动态随机存取存储器）电路，由这些方法产生的结构和器件，以及并入该器件的系统。