公开(公告)号：US20070069291A1

公开(公告)日：2007-03-29

申请号：US11520912

申请日：2006-09-14

申请人： Michael Stuber ,  Christopher Brindle ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener ,  Alexander Dribinsky ,  Tae Kim

发明人： Michael Stuber ,  Christopher Brindle ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener ,  Alexander Dribinsky ,  Tae Kim

IPC分类号： H01L27/12

CPC分类号： H01L29/78615 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/78651 ,  H01L29/78654 ,  H01L29/78657 ,  H03K17/162

摘要： A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

摘要翻译： 公开了一种用于使用累积电荷控制（ACC）技术来改善绝缘体上半导体（SOI）金属氧化物 - 硅场效应晶体管（MOSFET）器件的栅极氧化物可靠性的方法和装置。 该方法和装置适于去除，减少或以其他方式控制SOI MOSFET中的累积电荷，从而产生FET性能特性的改进。 在一个实施例中，电路包括以累积电荷状态运行的MOSFET，以及用于控制可操作地耦合到SOI MOSFET的累积电荷的装置。 首先确定不受控制的累积电荷对SOI MOSFET的栅极氧化物的时间依赖介电击穿（TDDB）的影响。 第二次确定SOI MOSFET的栅极氧化物的受控累积电荷对TDDB的影响。 SOI MOSFET适于具有响应于第一和第二确定的选择的平均时间分辨率，并且使用用于可操作地耦合到SOI MOSFET的累积电荷控制的技术来操作电路。 在一个实施例中，累积的电荷控制技术包括使用可操作地耦合到SOI MOSFET体的累积电荷宿。

公开(公告)号：US20080076371A1

公开(公告)日：2008-03-27

申请号：US11881816

申请日：2007-07-26

申请人： Alexander Dribinsky ,  Tae Kim ,  Dylan Kelly ,  Christopher Brindle

发明人： Alexander Dribinsky ,  Tae Kim ,  Dylan Kelly ,  Christopher Brindle

IPC分类号： H04B1/16

CPC分类号： H03K17/161 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08 ,  H03K17/102 ,  H03K17/284 ,  H03K17/6874 ,  H03K17/689 ,  H03K2217/0009

摘要： A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

摘要翻译： 公开了一种用于控制电路中的电荷注入的电路和方法。 在一个实施例中，电路和方法用于绝缘体上半导体（SOI）射频（RF）开关中。 在一个实施例中，SOI RF开关包括串联耦合的多个开关晶体管，被称为“堆叠”晶体管，并且在SOI衬底上被实现为单片集成电路。 电荷注入控制元件被耦合以从位于开关晶体管之间的电阻隔离节点接收注入的电荷，并且将注入的电荷传送到不被电阻隔离的至少一个节点。 在一个实施例中，电荷注入控制元件包括电阻器。 在另一个实施例中，电荷注入控制元件包括晶体管。 公开了一种用于控制开关电路中的电荷注入的方法，其中注入的电荷在串联耦合的开关晶体管之间的电阻隔离节点处产生，并且注入的电荷被传送到不被电阻隔离的开关电路的至少一个节点。

公开(公告)号：US20070018247A1

公开(公告)日：2007-01-25

申请号：US11484370

申请日：2006-07-10

申请人： Christopher Brindle ,  Michael Stuber ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener

发明人： Christopher Brindle ,  Michael Stuber ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener

IPC分类号： H01L27/12

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

摘要翻译： 公开了一种用于改善使用累积电荷吸收（ACS）的MOSFET器件的线性特性的方法和装置。 该方法和装置适于去除，减少或以其他方式控制SOI MOSFET中的累积电荷，从而产生FET性能特性的改进。 在一个示例性实施例中，具有至少一个SOI MOSFET的电路被配置为在累积电荷状态下操作。 当FET在累积电荷状态下工作时，可操作地耦合到SOI MOSFET的主体的累积电荷吸收器消除，去除或以其他方式控制累积电荷，从而降低寄生偏离态源极至漏极间电容的非线性 的SOI MOSFET。 在利用改进的SOI MOSFET器件实现的RF开关电路中，当SOI MOSFET在累积电荷状态下工作时，通过去除或以其他方式控制累积电荷来减小谐波和互调失真。

公开(公告)号：US20070247211A1

公开(公告)日：2007-10-25

申请号：US11821204

申请日：2007-06-22

申请人： Christopher Brindle

发明人： Christopher Brindle

IPC分类号： H03K17/00

CPC分类号： H03K17/6871 ,  H03K17/687

摘要： A switch includes at least two signal ports in series with a series FET connected therebetween, and a shunt path having an FET, whereby an input bias is applied to a gate on the series FET and to a drain on the shunt FET. In one embodiment, the switch includes a control signal input, an FET connected in series across the first port and the second port, the series FET having a gate coupled to the control signal input, and a shunt path provided by an FET, the shunt FET having a drain coupled to the control signal input and to the gate of the series FET, whereby a single control signal is applied to both the series FET and the shunt FET, via the control signal input, in order to turn the series FET on and simultaneously turn the shunt FET off and, conversely, in order to turn the series FET off and simultaneously turn the shunt FET on.

公开(公告)号：US07529526B2

公开(公告)日：2009-05-05

申请号：US10868123

申请日：2004-06-15

申请人： Christopher Brindle ,  Norbert Andrew Schmitz ,  Christopher Dirk Weigand

发明人： Christopher Brindle ,  Norbert Andrew Schmitz ,  Christopher Dirk Weigand

IPC分类号： H04B1/04

CPC分类号： H04B1/04 ,  H03G3/3042

摘要： An apparatus and method for detecting radio frequency transmit power levels produced by a power amplifier of a wireless device is described. In one exemplary apparatus implementation, the apparatus includes a power amplifier, an antenna switch and a power amplifier detector. The power amplifier is configured to amplify a transmit signal at a desired power level. An antenna switch, is located between the power amplifier and an antenna, and is configured to switch the antenna from a receive mode to a transmit mode and vice versa. A power amplifier detector is connected to the antenna switch. The power amplifier detector is configured to receive a leakage signal from the antenna switch as a basis to detect the power level of the transmit signal.

摘要翻译： 描述了一种用于检测由无线设备的功率放大器产生的射频发射功率电平的装置和方法。 在一个示例性装置实现中，该装置包括功率放大器，天线开关和功率放大器检测器。 功率放大器被配置为以期望功率电平放大发射信号。 天线开关位于功率放大器和天线之间，并被配置为将天线从接收模式切换到发射模式，反之亦然。 功率放大器检测器连接到天线开关。 功率放大器检测器被配置为从天线开关接收泄漏信号作为检测发射信号的功率电平的基础。

公开(公告)号：US20070144091A1

公开(公告)日：2007-06-28

申请号：US11613662

申请日：2006-12-20

申请人： Christopher Brindle

发明人： Christopher Brindle

IPC分类号： E04B1/38 ,  E04B2/00

CPC分类号： F16B5/0692 ,  E04H4/0018 ,  F16B2/241

摘要： The invention provides a sheet material retaining clip 10 to hold sheet material 25 onto a structure having a panel 20 and a frame member 21 adjacent the panel. The clip has an elongate base portion 12 adapted to be located in a gap 22 between the panel and the frame member to hold the clip in place. A middle portion 14 connects to an end of the base portion and extends at approximately right angles away from the panel, and a spring arm 15 is connected to the outer end of the middle portion and extends at an acute angle therefrom on the opposite side to the base portion. This allows it to bear on the sheet material to hold it against the panel. The invention also provided for the use of such a clip to connect insulating material to the sides of an aboveground pool.

摘要翻译： 本发明提供了一种片材保持夹10，以将片材25保持在具有面板20和与面板相邻的框架构件21的结构上。 夹子具有细长的基部12，其适于位于面板和框架构件之间的间隙22中，以将夹子保持在适当位置。 中间部分14连接到基部的端部并且以大致直角的方式延伸远离面板，并且弹簧臂15连接到中间部分的外端并且在其相对侧以其锐角延伸 基部。 这允许它承受在片材上以将其保持在面板上。 本发明还提供了使用这种夹子将绝缘材料连接到地上池的侧面。

公开(公告)号：US20050227643A1

公开(公告)日：2005-10-13

申请号：US10868123

申请日：2004-06-15

申请人： Christopher Brindle ,  Norbert Schmitz ,  Christopher Weigand

发明人： Christopher Brindle ,  Norbert Schmitz ,  Christopher Weigand

IPC分类号： H03G3/20 ,  H04B1/04 ,  H01Q11/12 ,  H04B1/00

CPC分类号： H04B1/04 ,  H03G3/3042

摘要： An apparatus and method for detecting radio frequency transmit power levels produced by a power amplifier of a wireless device is described. In one exemplary apparatus implementation, the apparatus includes a power amplifier, an antenna switch and a power amplifier detector. The power amplifier is configured to amplify a transmit signal at a desired power level. An antenna switch, is located between the power amplifier and an antenna, and is configured to switch the antenna from a receive mode to a transmit mode and vice versa. A power amplifier detector is connected to the antenna switch. The power amplifier detector is configured to receive a leakage signal from the antenna switch as a basis to detect the power level of the transmit signal.