公开(公告)号：US08075732B2

公开(公告)日：2011-12-13

申请号：US10979945

申请日：2004-11-01

申请人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

发明人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

IPC分类号： C23F1/00

CPC分类号： B08B7/00

摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.

摘要翻译： 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

公开(公告)号：US07732793B2

公开(公告)日：2010-06-08

申请号：US11705954

申请日：2007-02-13

申请人： Alexander I. Ershov ,  William F. Marx ,  Norbert Bowering ,  Bjorn A. M. Hansson ,  Oleh Khodykin ,  Igor V. Fomenkov

发明人： Alexander I. Ershov ,  William F. Marx ,  Norbert Bowering ,  Bjorn A. M. Hansson ,  Oleh Khodykin ,  Igor V. Fomenkov

IPC分类号： C25F1/00

CPC分类号： B82Y10/00 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/7085 ,  G03F7/70916 ,  G21K1/06 ,  G21K2201/06 ,  H05G2/001

摘要： Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

摘要翻译： 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面，提供了一种EUV计量监测器，其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面，公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面，EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面，公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

公开(公告)号：US07196342B2

公开(公告)日：2007-03-27

申请号：US11174442

申请日：2005-06-29

申请人： Alexander I. Ershov ,  William F. Marx

发明人： Alexander I. Ershov ,  William F. Marx

IPC分类号： C25F1/00

CPC分类号： B82Y10/00 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/7085 ,  G03F7/70916 ,  G21K1/06 ,  G21K2201/06 ,  H05G2/001

摘要： Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV meteorology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

摘要翻译： 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 一方面，提供了一种EUV气象监测器，其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面，公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面，EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面，公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

公开(公告)号：US07355191B2

公开(公告)日：2008-04-08

申请号：US11288868

申请日：2005-11-28

申请人： Alexander N. Bykanov ,  William F. Marx

发明人： Alexander N. Bykanov ,  William F. Marx

IPC分类号： G01J3/10

CPC分类号： G21K1/06 ,  B08B7/0071 ,  B82Y10/00 ,  G01N21/15 ,  G03F7/70916 ,  G03F7/70925 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067 ,  H05G2/001

摘要： Systems and methods are disclosed for cleaning a chamber window of an extreme ultraviolet (EUV) light source. The window may have an inside surface facing a chamber interior and an opposed outside surface and the light source may generate debris by plasma formation. For the system, a subsystem may be positioned outside the chamber and may be operable to pass energy through the window to heat debris accumulating on the inside surface of the window. In a first embodiment, the subsystem may place a flowing, heated gas in contact with the outside surface of the window. In another embodiment, electromagnetic radiation may be passed through the window.

摘要翻译： 公开了用于清洁极紫外（EUV）光源的室窗的系统和方法。 窗口可以具有面向室内部和相对的外表面的内表面，并且光源可以通过等离子体形成而产生碎屑。 对于该系统，子系统可以定位在室外，并且可操作以将能量传递通过窗口以加热积聚在窗口内表面上的碎屑。 在第一实施例中，子系统可以使流动的加热气体与窗口的外表面接触。 在另一个实施例中，电磁辐射可以通过窗口。