摘要:
Systems and methods are disclosed for cleaning a chamber window of an extreme ultraviolet (EUV) light source. The window may have an inside surface facing a chamber interior and an opposed outside surface and the light source may generate debris by plasma formation. For the system, a subsystem may be positioned outside the chamber and may be operable to pass energy through the window to heat debris accumulating on the inside surface of the window. In a first embodiment, the subsystem may place a flowing, heated gas in contact with the outside surface of the window. In another embodiment, electromagnetic radiation may be passed through the window.
摘要:
A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.
摘要:
An LPP EUV light source is disclosed having an optic positioned in the plasma chamber for reflecting EUV light generated therein and a laser input window. For this aspect, the EUV light source may be configured to expose the optic to a gaseous etchant pressure for optic cleaning while the window is exposed to a lower gaseous etchant pressure to avoid window coating deterioration. In another aspect, an EUV light source may comprise a target material positionable along a beam path to participate in a first interaction with light on the beam path; an optical amplifier; and at least one optic directing photons scattered from the first interaction into the optical amplifier to produce a laser beam on the beam path for a subsequent interaction with the target material to produce an EUV light emitting plasma.
摘要:
A laser light source is disclosed having a laser oscillator producing an output beam; a first amplifier amplifying the output beam to produce a first amplified beam, and a second amplifier amplifying the first amplified beam to produce a second amplified beam. For the source, the first amplifier may have a gain medium characterized by a saturation energy (Es, 1) and a small signal gain (go, 1); and the second amplifier may have a gain medium characterized by a saturation energy (Es, 2) and a small signal gain (go, 2), with (go, 1)>(go, 2) and (Es, 2)>(Es, 1). In another aspect, a laser oscillator of a laser light source may be a cavity dumped laser oscillator, e.g. a mode-locked laser oscillator, q-switched laser oscillator and may further comprising a temporal pulse stretcher.
摘要:
An EUV light source is disclosed which may comprise a laser source generating a laser beam and a source material, e.g. tin, SnBr4, SnBr2, SnH4, tin-gallium alloys, tin-indium alloys, tin-indium-gallium alloys or combinations thereof, that is irradiated by the laser beam to form a plasma and emit EUV light. The EUV light source may also comprise a beam dump positioned to receive the laser beam and a system controlling the temperature of the beam dump within a pre-selected range. In one embodiment, the source material may be irradiated at an irradiation zone and the source may further comprises a receiving structure formed with a surface shaped to receive source material ejected from the irradiation zone and direct the received source material for subsequent collection. The receiving structure and the beam dump may be formed as a single integrated unit.
摘要:
A laser light source is disclosed having a laser oscillator producing an output beam; a first amplifier amplifying the output beam to produce a first amplified beam, and a second amplifier amplifying the first amplified beam to produce a second amplified beam. For the source, the first amplifier may have a gain medium characterized by a saturation energy (Es, 1) and a small signal gain (go, 1); and the second amplifier may have a gain medium characterized by a saturation energy (Es, 2) and a small signal gain (go, 2), with (go, 1)>(go, 2) and (Es, 2)>(Es, 1). In another aspect, a laser oscillator of a laser light source may be a cavity dumped laser oscillator, e.g. a mode-locked laser oscillator, q-switched laser oscillator and may further comprising a temporal pulse stretcher.
摘要翻译:公开了具有产生输出光束的激光振荡器的激光源; 放大所述输出光束以产生第一放大光束的第一放大器,以及放大所述第一放大光束以产生第二放大光束的第二放大器。 对于源极,第一放大器可以具有以饱和能量(E S,S 1)和小信号增益(g 1,...)为特征的增益介质; 并且第二放大器可以具有特征在于饱和能量(E SUB,2 N)和小信号增益(g 0,o 2)的增益介质,其中(g < (o,SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >)。 在另一方面,激光光源的激光振荡器可以是空腔倾覆的激光振荡器,例如。 模式锁定激光振荡器,q切换激光振荡器,并且还可以包括时间脉冲展开器。
摘要:
An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
摘要:
A device is described herein which may comprise an oscillator having an oscillator cavity length, Lo, and defining an oscillator path; and a multi-pass optical amplifier coupled with the oscillator to establish a combined optical cavity including the oscillator path, the combined cavity having a length, Lcombined, where Lcombined=(N+x)*Lo, where “N” is an integer and “x” is a number between 0.4 and 0.6.
摘要:
Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.
摘要:
A gas flow management system may comprise a first and second enclosing walls at least partially surrounding first and second respective spaces; a system generating plasma in the first space, the plasma emitting extreme ultraviolet light; an elongated body restricting flow from the first space to the second space, the body at least partially surrounding a passageway and having a first open end allowing EUV light to enter the passageway from the first space and a second open end allowing EUV light to exit the passageway into the second space, the body shaped to establish a location having a reduced cross-sectional area relative to the first and second ends; and a flow of gas exiting an aperture, the aperture positioned to introduce gas into the passageway at a position between the first end of the body and the location having a reduced cross-sectional area.