公开(公告)号：US09011598B2

公开(公告)日：2015-04-21

申请号：US11541192

申请日：2006-09-28

申请人： Alice Boussagol ,  Frédéric Dupont ,  Bruce Faure

发明人： Alice Boussagol ,  Frédéric Dupont ,  Bruce Faure

IPC分类号： C30B33/06 ,  C30B29/38 ,  H01L21/762

CPC分类号： H01L21/76254 ,  Y10S117/915

摘要： The present invention provides methods for fabricating a composite substrate including a supporting substrate and a layer of a binary or ternary material having a crystal form that is non-cubic and semi-polar or non-polar. The methods comprise transferring the layer of a binary or ternary material from a donor substrate to a receiving substrate.

摘要翻译： 本发明提供了制造复合衬底的方法，所述复合衬底包括支撑衬底和具有非立方和半极性或非极性的晶体形式的二元或三元材料层。 所述方法包括将二元或三元材料的层从施主衬底转移到接收衬底。

公开(公告)号：US07839001B2

公开(公告)日：2010-11-23

申请号：US12536082

申请日：2009-08-05

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac, legal representative ,  Giséle Rayssac, legal representative

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L21/762 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US07135383B2

公开(公告)日：2006-11-14

申请号：US11020040

申请日：2004-12-21

申请人： Bruce Faure ,  Alice Boussagol

发明人： Bruce Faure ,  Alice Boussagol

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure. The composite structure provides sufficient heat dissipation properties for manufacturing optical, electronic, or optoelectronic components.

摘要翻译： 公开了一种复合结构，其包括支撑晶片和支撑晶片上的分层结构。 层状结构包括至少一层单晶材料和至少一层电介质材料。 此外，选择层状结构材料和每层的厚度使得复合结构的环境温度和600°K之间的热阻抗是不大于单晶体块状SiC的热阻抗的约1.3倍的值 晶片具有与复合结构相同的尺寸。 复合结构为制造光学，电子或光电子元件提供了足够的散热特性。

公开(公告)号：US20070287273A1

公开(公告)日：2007-12-13

申请号：US11840696

申请日：2007-08-17

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L21/20

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US20090289332A1

公开(公告)日：2009-11-26

申请号：US12536082

申请日：2009-08-05

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L29/02

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US07256473B2

公开(公告)日：2007-08-14

申请号：US11539310

申请日：2006-10-06

申请人： Bruce Faure ,  Alice Boussagol

发明人： Bruce Faure ,  Alice Boussagol

IPC分类号： H01L21/4763

CPC分类号： H01L21/76254

摘要： A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure. The composite structure provides sufficient heat dissipation properties for manufacturing optical, electronic, or optoelectronic components.

摘要翻译： 公开了一种复合结构，其包括支撑晶片和支撑晶片上的分层结构。 层状结构包括至少一层单晶材料和至少一层电介质材料。 此外，选择层状结构材料和每层的厚度使得复合结构的环境温度和600°K之间的热阻抗是不大于单晶体块状SiC的热阻抗的约1.3倍的值 晶片具有与复合结构相同的尺寸。 复合结构为制造光学，电子或光电子元件提供了足够的散热特性。

公开(公告)号：US20070022940A1

公开(公告)日：2007-02-01

申请号：US11541192

申请日：2006-09-28

申请人： Alice Boussagol ,  Frederic Dupont ,  Bruce Faure

发明人： Alice Boussagol ,  Frederic Dupont ,  Bruce Faure

IPC分类号： C30B33/06

CPC分类号： H01L21/76254 ,  Y10S117/915

摘要： The present invention provides methods for fabricating a composite substrate including a supporting substrate and a layer of a binary or ternary material having a crystal form that is non-cubic and semi-polar or non-polar. The methods comprise transferring the layer of a binary or ternary material from a donor substrate to a receiving substrate.

摘要翻译： 本发明提供了制造复合衬底的方法，所述复合衬底包括支撑衬底和具有非立方和半极性或非极性的晶体形式的二元或三元材料层。 所述方法包括将二元或三元材料的层从施主衬底转移到接收衬底。

公开(公告)号：US07939428B2

公开(公告)日：2011-05-10

申请号：US12914194

申请日：2010-10-28

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac, legal representative ,  Gisèle Rayssac, legal representative

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L21/762

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收衬底上并将有用层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US20110039368A1

公开(公告)日：2011-02-17

申请号：US12914194

申请日：2010-10-28

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac

IPC分类号： H01L31/18 ,  H01L21/30

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收衬底上并将有用层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US07615468B2

公开(公告)日：2009-11-10

申请号：US11840696

申请日：2007-08-17

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac, legal representative ,  Gisèle Rayssac, legal representative

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L21/762

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。