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    Methods of forming silicon nanocrystals by laser annealing
    2.
    发明申请
    Methods of forming silicon nanocrystals by laser annealing 有权
    通过激光退火形成硅纳米晶体的方法

    公开(公告)号：US20080178794A1

    公开(公告)日：2008-07-31

    申请号：US11698261

    申请日：2007-01-25

    申请人： An-Thung Cho ,  Chih-Wei Chao ,  Chia-Tien Peng ,  Wan-Yi Liu ,  Ming-Wei Sun

    发明人： An-Thung Cho ,  Chih-Wei Chao ,  Chia-Tien Peng ,  Wan-Yi Liu ,  Ming-Wei Sun

    IPC分类号： C03B25/00

    CPC分类号： C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  Y10S977/784 ,  Y10S977/809 ,  Y10S977/814 ,  Y10S977/844 ,  Y10S977/89 ,  Y10S977/891

    摘要： The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first conductive layer, and (iii) laser-annealing at least the silicon-rich dielectric layer to induce silicon-rich aggregation to form a plurality of silicon nanocrystals in the silicon-rich dielectric layer. The silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, or a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with silicon nanocrystals in a silicon-rich dielectric layer is usable in a solar cell, a photodetector, a touch panel, a non-volatile memory device as storage node, and a liquid crystal display.

    摘要翻译： 本发明涉及一种用硅纳米晶形成层状结构的方法。 在一个实施例中，该方法包括以下步骤：（i）在衬底上形成第一导电层，（ii）在第一导电层上形成富硅介电层，和（iii）至少激光退火硅 富集的介电层以诱导富硅聚集在富硅介电层中形成多个硅纳米晶体。 富硅电介质层是折射率在约1.4至2.3范围内的富硅氧化物膜之一，或折射率在约1.7至2.3范围内的富含硅的氮化物膜之一。 在富硅介电层中具有硅纳米晶体的分层结构可用于太阳能电池，光电检测器，触摸面板，作为存储节点的非易失性存储器件和液晶显示器。

    Methods of forming silicon nanocrystals by laser annealing
    3.
    发明授权
    Methods of forming silicon nanocrystals by laser annealing 有权
    通过激光退火形成硅纳米晶体的方法

    公开(公告)号：US07857907B2

    公开(公告)日：2010-12-28

    申请号：US11698261

    申请日：2007-01-25

    申请人： An-Thung Cho ,  Chih-Wei Chao ,  Chia-Tien Peng ,  Wan-Yi Liu ,  Ming-Wei Sun

    发明人： An-Thung Cho ,  Chih-Wei Chao ,  Chia-Tien Peng ,  Wan-Yi Liu ,  Ming-Wei Sun

    IPC分类号： C30B25/00 ,  C30B28/12

    CPC分类号： C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  Y10S977/784 ,  Y10S977/809 ,  Y10S977/814 ,  Y10S977/844 ,  Y10S977/89 ,  Y10S977/891

    摘要： The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first conductive layer, and (iii) laser-annealing at least the silicon-rich dielectric layer to induce silicon-rich aggregation to form a plurality of silicon nanocrystals in the silicon-rich dielectric layer. The silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, or a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with silicon nanocrystals in a silicon-rich dielectric layer is usable in a solar cell, a photodetector, a touch panel, a non-volatile memory device as storage node, and a liquid crystal display.

    摘要翻译： 本发明涉及一种用硅纳米晶形成层状结构的方法。 在一个实施例中，该方法包括以下步骤：（i）在衬底上形成第一导电层，（ii）在第一导电层上形成富硅介电层，和（iii）至少激光退火硅 富集的介电层以诱导富硅聚集在富硅介电层中形成多个硅纳米晶体。 富硅电介质层是折射率在约1.4至2.3范围内的富硅氧化物膜之一，或折射率在约1.7至2.3范围内的富含硅的氮化物膜之一。 在富硅介电层中具有硅纳米晶体的分层结构可用于太阳能电池，光电检测器，触摸面板，作为存储节点的非易失性存储器件和液晶显示器。

    LAYERED STRUCTURE WITH LASER-INDUCED AGGREGATION SILICON NANO-DOTS IN A SILICON-RICH DIELECTRIC LAYER, AND APPLICATIONS OF THE SAME
    4.
    发明申请
    LAYERED STRUCTURE WITH LASER-INDUCED AGGREGATION SILICON NANO-DOTS IN A SILICON-RICH DIELECTRIC LAYER, AND APPLICATIONS OF THE SAME 审中-公开
    具有激光诱导的聚硅氧烷纳米颗粒在硅酸盐电介质层中的层状结构及其应用

    公开(公告)号：US20080179762A1

    公开(公告)日：2008-07-31

    申请号：US11876516

    申请日：2007-10-22

    申请人： An-Thung Cho ,  Chih-Wei Chao ,  Chia-Tien Peng

    发明人： An-Thung Cho ,  Chih-Wei Chao ,  Chia-Tien Peng

    IPC分类号： H01L29/788 ,  H01L21/00 ,  H01L31/00 ,  H01L21/336 ,  B05D5/12 ,  H01L31/06

    CPC分类号： H01L29/42332 ,  H01L27/1214 ,  H01L29/66825 ,  H01L29/66833 ,  H01L31/0352 ,  H01L31/06 ,  H01L31/10 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The present invention relates to a layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, where the laser-induced aggregation silicon nano-dots are formed by a laser-induced aggregation process applied to the silicon-rich dielectric layer, and applications of the same. In one embodiment, the silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, and a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer is usable in a solar cell, a photosensitive element, a touch panel, a non-volatile memory device as storage node, and a display panel, respectively.

    摘要翻译： 本发明涉及在富硅介电层中具有激光诱导的聚集硅纳米点的层状结构，其中激光诱导的聚集硅纳米点通过激光诱导的聚集方法形成，所述聚集硅纳米点应用于富硅 介电层及其应用。 在一个实施方案中，富硅介电层是折射率在约1.4至2.3范围内的富硅氧化物膜之一，富含硅的氮化物膜的折射率在约1.7至 2.3。 在富硅电介质层中具有激光诱导的聚集硅纳米点的层状结构可分别用于太阳能电池，感光元件，触摸面板，作为存储节点的非易失性存储器件和显示面板 。

    THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME
    7.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME 审中-公开
    显示面板的薄膜晶体管衬底和薄膜晶体管及其制造方法

    公开(公告)号：US20100012944A1

    公开(公告)日：2010-01-21

    申请号：US12400768

    申请日：2009-03-09

    申请人： An-Thung Cho ,  Chin-Wei Hu ,  Ming-Wei Sun ,  Chih-Wei Chao ,  Chia-Tien Peng ,  Kun-Chih Lin

    发明人： An-Thung Cho ,  Chin-Wei Hu ,  Ming-Wei Sun ,  Chih-Wei Chao ,  Chia-Tien Peng ,  Kun-Chih Lin

    IPC分类号： H01L29/04 ,  H01L21/84

    CPC分类号： H01L29/78633 ,  H01L29/78675

    摘要： A thin film transistor (TFT) formed on a transparent substrate is provided. The thin film transistor includes a patterned semiconductor layer, a gate insulating layer disposed on the patterned semiconductor layer, a gate electrode disposed on the gate insulating layer, and a patterned light-absorbing layer. The patterned semiconductor layer includes a channel region, and a source region and a drain region disposed on two opposite sides of the channel region in the pattern semiconductor layer. The patterned light-absorbing layer is disposed between the transparent substrate and the patterned semiconductor layer.

    摘要翻译： 提供了形成在透明基板上的薄膜晶体管（TFT）。 薄膜晶体管包括图案化半导体层，设置在图案化半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极和图案化的光吸收层。 图案化的半导体层包括沟道区，以及设置在图案半导体层中的沟道区的两个相对侧上的源极区和漏极区。 图案化的光吸收层设置在透明基板和图案化的半导体层之间。