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    Low-parasitic capacitance MEMS inertial sensors and related methods
    1.
    发明授权
    Low-parasitic capacitance MEMS inertial sensors and related methods 有权

    公开(公告)号：US11279614B2

    公开(公告)日：2022-03-22

    申请号：US16457865

    申请日：2019-06-28

    Applicant: Analog Devices, Inc.

    Inventor： Charles Blackmer ,  Jeffrey A. Gregory ,  Nikolay Pokrovskiy ,  Bradley C. Kaanta

    IPC: B81C1/00 ,  G01C19/5755 ,  G01P15/08

    Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

    Low-parasitic capacitance MEMS inertial sensors and related methods
    2.
    发明授权
    Low-parasitic capacitance MEMS inertial sensors and related methods 有权

    公开(公告)号：US11746004B2

    公开(公告)日：2023-09-05

    申请号：US17668326

    申请日：2022-02-09

    Applicant: Analog Devices, Inc.

    Inventor： Charles Blackmer ,  Jeffrey A. Gregory ,  Nikolay Pokrovskiy ,  Bradley C. Kaanta

    IPC: B81C1/00 ,  G01C19/5755 ,  G01P15/08

    CPC classification number: B81C1/00063 ,  B81C1/00166 ,  G01C19/5755 ,  G01P15/0802 ,  B81B2201/0235 ,  B81B2201/0242

    Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

    MEMS GYROSCOPES WITH IN-LINE SPRINGS AND RELATED SYSTEMS AND METHODS
    5.
    发明申请
    MEMS GYROSCOPES WITH IN-LINE SPRINGS AND RELATED SYSTEMS AND METHODS 审中-公开

    公开(公告)号：US20190310087A1

    公开(公告)日：2019-10-10

    申请号：US15946119

    申请日：2018-04-05

    Applicant: Analog Devices, Inc.

    Inventor： Jeffrey A. Gregory ,  Charles Blackmer

    IPC: G01C19/5712 ,  G01C19/5747

    Abstract: Microelectromechanical systems (MEMS) devices (such as gyroscopes) configured to reject quadrature motion are described. Quadrature motion arises for example when the drive motion of a gyroscope couples to the sense motion of a gyroscope even in the absence of an angular motion. In some circumstances, quadrature motion may result from the fact that the springs used in a gyroscope have slanted sidewall, which can impart torque in the mechanics of the gyroscope. MEMS gyroscope of the type described herein may be configured to reject quadrature motion by using only springs oriented substantially parallel to the drive direction. One such spring includes only beams parallel the drive directions, and optionally. These MEMS gyroscopes may be used to sense, among others, roll and pitch angular rates.

    LOW-PARASITIC CAPACITANCE MEMS INERTIAL SENSORS AND RELATED METHODS
    7.
    发明申请
    LOW-PARASITIC CAPACITANCE MEMS INERTIAL SENSORS AND RELATED METHODS 有权

    公开(公告)号：US20220162059A1

    公开(公告)日：2022-05-26

    申请号：US17668326

    申请日：2022-02-09

    Applicant: Analog Devices, Inc.

    Inventor： Charles Blackmer ,  Jeffrey A. Gregory ,  Nikolay Pokrovskiy ,  Bradley C. Kaanta

    IPC: B81C1/00 ,  G01C19/5755 ,  G01P15/08

    Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

    MEMS gyroscopes with in-line springs and related systems and methods
    9.
    发明授权
    MEMS gyroscopes with in-line springs and related systems and methods 有权

    公开(公告)号：US10948294B2

    公开(公告)日：2021-03-16

    申请号：US15946119

    申请日：2018-04-05

    Applicant: Analog Devices, Inc.

    Inventor： Jeffrey A. Gregory ,  Charles Blackmer

    IPC: G01C19/5712 ,  G01C19/5747

    Abstract: Microelectromechanical systems (MEMS) devices (such as gyroscopes) configured to reject quadrature motion are described. Quadrature motion arises for example when the drive motion of a gyroscope couples to the sense motion of a gyroscope even in the absence of an angular motion. In some circumstances, quadrature motion may result from the fact that the springs used in a gyroscope have slanted sidewall, which can impart torque in the mechanics of the gyroscope. MEMS gyroscope of the type described herein may be configured to reject quadrature motion by using only springs oriented substantially parallel to the drive direction. One such spring includes only beams parallel the drive directions, and optionally. These MEMS gyroscopes may be used to sense, among others, roll and pitch angular rates.

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