公开(公告)号：US11695093B2

公开(公告)日：2023-07-04

申请号：US16679549

申请日：2019-11-11

Applicant: Analog Devices, Inc.

Inventor： Shrenik Deliwala ,  Ryan Michael Iutzi

IPC: H01L33/06 ,  H01L33/58 ,  H01L33/64 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/024

CPC classification number: H01L33/06 ,  H01L31/024 ,  H01L31/02327 ,  H01L31/035236 ,  H01L33/58 ,  H01L33/644

Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

公开(公告)号：US20200161502A1

公开(公告)日：2020-05-21

申请号：US16679549

申请日：2019-11-11

Applicant: Analog Devices, Inc.

Inventor： Shrenik Deliwala ,  Ryan Michael Iutzi

IPC: H01L33/06 ,  H01L33/58 ,  H01L33/64 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/024

Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

公开(公告)号：US20230307576A1

公开(公告)日：2023-09-28

申请号：US18322304

申请日：2023-05-23

Applicant: Analog Devices, Inc.

Inventor： Shrenik Deliwala ,  Ryan Michael Iutzi

IPC: H01L33/06 ,  H01L33/58 ,  H01L31/024 ,  H01L31/0352 ,  H01L31/0232 ,  H01L33/64

CPC classification number: H01L33/06 ,  H01L33/58 ,  H01L31/024 ,  H01L31/035236 ,  H01L31/02327 ,  H01L33/644

Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AISb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.