Magnetron with a rotating center magnet for a vault shaped sputtering target
    1.
    发明授权
    Magnetron with a rotating center magnet for a vault shaped sputtering target 有权
    磁控管具有用于拱形溅射靶的旋转中心磁体

    公开(公告)号:US06406599B1

    公开(公告)日:2002-06-18

    申请号:US09703738

    申请日:2000-11-01

    IPC分类号: C23C1434

    摘要: A plasma sputter reactor including a target with an annular vault formed in a surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target. The lower frame supports the target while the upper frame supports the magnetron, including the magnets adjacent the lower frame. The inner magnet assembly has a cooling water passage passing to the bottom of the inner magnet to inject the cooling water to the bottom of the well. The cooling water is stirred by the rotating roof magnetron and leaves the water bath through inlets formed in the bottom frame but exits from the top frame.

    摘要翻译: 一种等离子体溅射反应器,包括具有环形拱顶的靶,该环形拱顶形成在面向待溅射涂层的晶片的表面上,并且具有内侧壁和外侧壁以及其上方的屋顶。 在管状内侧壁之间的靶的后部形成有孔。 与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件,位于内侧壁后面的另一极性的可旋转管状磁体组件,以及可在屋顶上方旋转的小型不平衡磁控管 关于目标的中心轴。 下框架支撑目标,而上框架支撑磁控管,包括与下框架相邻的磁体。 内部磁体组件具有通过内部磁体底部的冷却水通道,以将冷却水注入到井的底部。 冷却水由旋转屋顶磁控管搅拌,并通过形成在底架中的入口离开水浴,但是从顶架离开。

    Magnetron for a vault shaped sputtering target having two opposed sidewall magnets
    2.
    发明授权
    Magnetron for a vault shaped sputtering target having two opposed sidewall magnets 有权
    用于具有两个相对的侧壁磁体的拱形溅射靶的磁控管

    公开(公告)号:US06790326B2

    公开(公告)日:2004-09-14

    申请号:US10171318

    申请日:2002-06-13

    IPC分类号: C23C1435

    摘要: A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.

    摘要翻译: 一种等离子体溅射反应器,其包括具有环形拱顶的靶,其表面面向待溅射涂覆的晶片,并且具有内侧壁和外侧壁以及顶部。 在管状内侧壁之间的靶的后部形成有孔。 与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件,位于内侧壁后面的另一极性的可旋转管状磁体组件,以及可在屋顶上方旋转的小型不平衡磁控管 关于目标的中心轴。

    Self-ionized and capacitively-coupled plasma for sputtering and resputtering
    3.
    发明授权
    Self-ionized and capacitively-coupled plasma for sputtering and resputtering 有权
    用于溅射和再溅射的自电离和电容耦合等离子体

    公开(公告)号:US07504006B2

    公开(公告)日:2009-03-17

    申请号:US10632882

    申请日:2003-07-31

    IPC分类号: C23C14/35

    摘要: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

    摘要翻译: 例如,用于溅射诸如钽和氮化钽的沉积材料的DC磁控溅射反应器及其使用的自离子等离子体(SIP)溅射和电容耦合等离子体(CCP)溅射的方法,其一起或交替地被促进 ,在同一个房间。 此外,可以通过电感耦合等离子体(ICP)再溅射来减薄或消除底部覆盖。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 CCP由将电能耦合到等离子体中的RF能量的基座电极提供。 CCP等离子体优选由围绕基座的电磁线圈产生的磁场增强,其作用是限制CCP等离子体并增加其密度。

    Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system
    6.
    发明授权
    Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system 有权
    非侵入式(OTF)温度测量和监测系统

    公开(公告)号:US06190037B1

    公开(公告)日:2001-02-20

    申请号:US09253220

    申请日:1999-02-19

    IPC分类号: G01J500

    CPC分类号: G01J5/041 G01J5/0022

    摘要: The present invention provides an apparatus and method for measuring the temperature of a moving radiant object. A probe, such as a pyrometer, is disposed in an opening of a vacuum chamber adjacent a radiation transparent window. The probe defines an optical path which intercepts the radiant object entering or exiting a processing chamber. The radiant object is moved through the optical path and emits electromagnetic waves. The electromagnetic waves are collected by the probe and transmitted to a signal processing unit where the waves are detected and converted to a temperature reading. If desired, the accumulated data may then be used to generate a cooling curve representing the thermal effects experienced by the radiant object. Extrapolation or correlation methods may be used to extend the cooling curve to points in time prior to or after the data collected by the probe.

    摘要翻译: 本发明提供了一种用于测量运动辐射物体的温度的装置和方法。 诸如高温计的探针设置在与辐射透明窗相邻的真空室的开口中。 探针限定了拦截进入或离开处理室的辐射物体的光路。 辐射物体通过光路移动并发射电磁波。 电磁波由探头收集并传输到信号处理单元,在该信号处理单元检测波并将其转换为温度读数。 如果需要,则可以使用累积的数据来产生表示辐射物体经历的热效应的冷却曲线。 可以使用外推法或相关方法将冷却曲线延伸到由探针收集的数据之前或之后的时间点。