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公开(公告)号：US06659842B2
公开(公告)日：2003-12-09
申请号：US09929903
申请日：2001-08-14
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L21/3212
摘要： An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad that has a window, causes relative motion between the substrate and the polishing pad, and directs a light beam through the window so that the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate. Light beam reflections from the substrate are detected, and used to determine polishing parameters, detect process repeatability, and qualify processes.
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2.发明授权公开(公告)号：US06296548B1
公开(公告)日：2001-10-02
申请号：US09591187
申请日：2000-06-08
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L21/3212
摘要： An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad that has a window, causes relative motion between the substrate and the polishing pad, and directs a light beam through the window so that the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate. Light beam reflections from the substrate are detected, and used to determine polishing parameters, detect process repeatability, and qualify processes.
摘要翻译： 一种装置以及方法使基板的表面与具有窗口的抛光垫接触，引起基板和抛光垫之间的相对运动，并引导光束通过窗口，使得运动 抛光垫相对于基底使得光束在穿过基底的路径中移动。 检测来自基板的光束反射，并用于确定抛光参数，检测过程重复性和限定工艺。
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3.发明授权Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers 有权用于检测金属层化学机械抛光终点的方法和装置公开(公告)号：US06652355B2
公开(公告)日：2003-11-25
申请号：US09874086
申请日：2001-06-04
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L21/3212
摘要： An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.
摘要翻译： 一种装置以及一种方法确定化学机械抛光衬底上的金属层的终点。 该装置的方法包括使基板的表面与具有窗口的抛光垫接触; 引起基板和抛光垫之间的相对运动; 将光束引导通过窗口，抛光垫相对于基底的运动导致光束在穿过基底的路径中移动; 检测来自基板和保持环的光束反射; 产生与光束反射相关联的反射数据; 将反射数据分割成多个径向范围; 以及根据所述多个径向范围内的反射数据识别所述预定图案以建立所述端点。
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4.发明授权公开(公告)号：US06280289B1
公开(公告)日：2001-08-28
申请号：US09184767
申请日：1998-11-02
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L21/3212
摘要： An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.
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5.发明授权Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers 有权用于检测金属层化学机械抛光终点的方法和装置公开(公告)号：US06913511B2
公开(公告)日：2005-07-05
申请号：US10722716
申请日：2003-11-25
IPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/06 , H01L21/321 , B49D1/00
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L21/3212
摘要： An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.
摘要翻译： 一种装置以及一种方法确定化学机械抛光衬底上的金属层的终点。 该装置的方法包括使基板的表面与具有窗口的抛光垫接触; 引起基板和抛光垫之间的相对运动; 将光束引导通过窗口，抛光垫相对于基底的运动导致光束在穿过基底的路径中移动; 检测来自基板和保持环的光束反射; 产生与光束反射相关联的反射数据; 将反射数据分割成多个径向范围; 以及根据所述多个径向范围内的反射数据识别所述预定图案以建立所述端点。
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公开(公告)号：US06506097B1
公开(公告)日：2003-01-14
申请号：US09764733
申请日：2001-01-16
申请人： Bret W. Adams , Boguslaw A. Swedek , Rajeev Bajaj , Savitha Nanjangud , Andreas Norbert Wiswesser , Stan D. Tsai , David A. Chan , Fred C. Redeker , Manoocher Birang
发明人： Bret W. Adams , Boguslaw A. Swedek , Rajeev Bajaj , Savitha Nanjangud , Andreas Norbert Wiswesser , Stan D. Tsai , David A. Chan , Fred C. Redeker , Manoocher Birang
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.
摘要翻译： 一种用于两步抛光工艺的光学监视系统，其为多个径向区域中的每一个产生反射迹线。 当任何反射迹线表示金属层的初始间隙时，CMP设备可以从高选择性浆料切换到低选择性浆料，并且当所有反射迹线表示氧化物层已经完全暴露时，抛光可能停止。
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公开(公告)号：US06632124B2
公开(公告)日：2003-10-14
申请号：US10339959
申请日：2003-01-10
申请人： Bret W. Adams , Boguslaw A. Swedek , Rajeev Bajaj , Savitha Nanjangud , Andreas Norbert Wiswesser , Stan D. Tsai , David A. Chan , Fred C. Redeker , Manoocher Birang
发明人： Bret W. Adams , Boguslaw A. Swedek , Rajeev Bajaj , Savitha Nanjangud , Andreas Norbert Wiswesser , Stan D. Tsai , David A. Chan , Fred C. Redeker , Manoocher Birang
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.
摘要翻译： 一种用于两步抛光工艺的光学监视系统，其为多个径向区域中的每一个产生反射迹线。 当任何反射迹线表示金属层的初始间隙时，CMP设备可以从高选择性浆料切换到低选择性浆料，并且当所有反射迹线表示氧化物层已经完全暴露时，抛光可能停止。
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公开(公告)号：US07101254B2
公开(公告)日：2006-09-05
申请号：US10966948
申请日：2004-10-15
CPC分类号： B24B37/345 , B24B37/005 , B24B49/105 , G01B7/105 , H01L21/67219 , H01L22/12
摘要： A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.
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公开(公告)号：US06811466B1
公开(公告)日：2004-11-02
申请号：US10330685
申请日：2002-12-27
IPC分类号： B24B4900
CPC分类号： B24B37/345 , B24B37/005 , B24B49/105 , G01B7/105 , H01L21/67219 , H01L22/12
摘要： A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.
摘要翻译： 一种系统包括用于将涡流探针靠近衬底保持器中的衬底定位的测量站。 探针可以产生时变磁场，以便在抛光之前或之后在衬底的一个或多个导电区域中引起涡流。 检测涡流信号，并可用于更新化学机械抛光系统的一个或多个抛光参数。 衬底保持器可以位于多个位置; 例如，在基板传送系统，工厂接口模块，清洁器或化学机械抛光系统的远离抛光站的一部分中。 可以使用附加的探针。
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公开(公告)号：US07008295B2
公开(公告)日：2006-03-07
申请号：US10358852
申请日：2003-02-04
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B49/12
摘要： Methods and apparatus for monitoring a substrate surface during chemical mechanical polishing are disclosed.
摘要翻译： 公开了用于在化学机械抛光期间监测基底表面的方法和装置。
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