公开(公告)号：US08394719B2

公开(公告)日：2013-03-12

申请号：US13106711

申请日：2011-05-12

申请人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou ,  Yen-Wei Cheng

发明人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou ,  Yen-Wei Cheng

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L22/20 ,  G05B19/41875 ,  H01L22/12 ,  Y02P90/22 ,  Y02P90/26

摘要： System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method including obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the wafer. A process variable of the process is modeled as a function of the low resolution metrology data to generate a low-resolution process model and the process variable is modeled as a function of the high resolution metrology data to generate a high-resolution process model. The method further includes calibrating the low resolution process model; combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and analyzing a response of the multi-resolution process model and the low and high resolution metrology data to control performance of a process module.

摘要翻译： 描述了实现多分辨率高级过程控制（APC）的系统和方法。 一个实施例是一种方法，包括获得与用于在晶片上执行处理的处理模块相关的低分辨率度量数据和高分辨率度量数据。 该过程的过程变量被模型化为低分辨率度量数据的函数，以生成低分辨率过程模型，并且将过程变量建模为高分辨率度量数据的函数以生成高分辨率过程模型。 该方法还包括校准低分辨率过程模型; 将校准的低分辨率过程模型与高分辨率过程模型相结合，以生成多分辨率过程模型，其将过程变量建模为低分辨率度量数据和高分辨率度量数据的函数; 并分析多分辨率过程模型和低分辨率和高分辨率度量数据的响应，以控制过程模块的性能。

公开(公告)号：US20100255613A1

公开(公告)日：2010-10-07

申请号：US12416595

申请日：2009-04-01

申请人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou

发明人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou

IPC分类号： H01L21/66 ,  H01L21/306

CPC分类号： G05B19/41875 ,  H01L22/12 ,  H01L22/20 ,  Y02P90/22 ,  Y02P90/26

摘要： System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method for fabricating ICs from a semiconductor wafer comprising performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further comprises removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.

摘要翻译： 描述了用于实现多分辨率高级过程控制（“APC”）的系统和方法。 一个实施例是一种用于从半导体晶片制造IC的方法，包括在半导体晶片上执行第一工艺; 进行第一次测量，表明执行第一个处理的精度; 以及使用所述第一测量来产生计量学校准数据，其中所述计量学校准数据包括有效部分和非有效部分。 该方法还包括从计量校准数据中去除非有效部分并用计量校准模型对有效部分进行建模; 将所述计量校准模型与第一过程模型结合以生成多分辨率模型，其中所述第一过程模型对所述第一过程的输入 - 输出关系建模; 以及分析所述多分辨率模型和第二测量数据的响应以控制第二过程的性能。

公开(公告)号：US07951615B2

公开(公告)日：2011-05-31

申请号：US12416595

申请日：2009-04-01

申请人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou

发明人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： G05B19/41875 ,  H01L22/12 ,  H01L22/20 ,  Y02P90/22 ,  Y02P90/26

摘要： One embodiment is a method for fabricating ICs from a semiconductor wafer. The method includes performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further includes removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.

摘要翻译： 一个实施例是用于从半导体晶片制造IC的方法。 该方法包括在半导体晶片上执行第一处理; 进行第一次测量，表明执行第一个处理的精度; 以及使用所述第一测量来产生计量学校准数据，其中所述计量学校准数据包括有效部分和非有效部分。 该方法还包括从计量校准数据中去除非有效部分并用计量校准模型对有效部分进行建模; 将所述计量校准模型与第一过程模型结合以生成多分辨率模型，其中所述第一过程模型对所述第一过程的输入 - 输出关系建模; 以及分析所述多分辨率模型和第二测量数据的响应以控制第二过程的性能。

公开(公告)号：US20110213478A1

公开(公告)日：2011-09-01

申请号：US13106711

申请日：2011-05-12

申请人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-l Mou ,  Yen-Wei Cheng

发明人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-l Mou ,  Yen-Wei Cheng

IPC分类号： G06F17/00

CPC分类号： H01L22/20 ,  G05B19/41875 ,  H01L22/12 ,  Y02P90/22 ,  Y02P90/26

摘要： System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method comprising obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the wafer; modeling a process variable of the process as a function of the low resolution metrology data to generate a low-resolution process model; and modeling the process variable as a function of the high resolution metrology data to generate a high-resolution process model. The method further includes calibrating the low resolution process model; combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and analyzing a response of the multi-resolution process model and the low and high resolution metrology data to control performance of a process module.

摘要翻译： 描述了用于实现多分辨率高级过程控制（“APC”）的系统和方法。 一个实施例是一种方法，包括获得与用于在晶片上执行处理的处理模块相关的低分辨率度量数据和高分辨率度量数据; 将过程的过程变量建模为低分辨率度量数据的函数，以生成低分辨率过程模型; 并将过程变量建模为高分辨率度量数据的函数，以生成高分辨率过程模型。 该方法还包括校准低分辨率过程模型; 将校准的低分辨率过程模型与高分辨率过程模型相结合，以生成多分辨率过程模型，其将过程变量建模为低分辨率度量数据和高分辨率度量数据的函数; 并分析多分辨率过程模型和低分辨率和高分辨率度量数据的响应，以控制过程模块的性能。

公开(公告)号：US08396583B2

公开(公告)日：2013-03-12

申请号：US12731407

申请日：2010-03-25

申请人： Po-Feng Tsai ,  Andy Tsen ,  Jo Fei Wang ,  Jong-I Mou

发明人： Po-Feng Tsai ,  Andy Tsen ,  Jo Fei Wang ,  Jong-I Mou

IPC分类号： G06F19/00

CPC分类号： H01L22/20

摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes collecting a plurality of manufacturing data sets from a plurality of semiconductor processes, respectively. The method includes normalizing each of the manufacturing data sets in a manner so that statistical differences among the manufacturing data sets are reduced. The method includes establishing a database that includes the normalized manufacturing data sets. The method includes normalizing the database in a manner so that the manufacturing data sets in the normalized database are statistically compatible with a selected one of the manufacturing data sets. The method includes predicting performance of a selected one of the semiconductor processes by using the normalized database. The selected semiconductor process corresponds to the selected manufacturing data set. The method includes controlling a semiconductor processing machine in response to the predicted performance.

摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括分别从多个半导体处理中收集多个制造数据集。 该方法包括以制造数据组之间的统计差异减小的方式标准化每个制造数据组。 该方法包括建立包括标准化制造数据集的数据库。 该方法包括以使得归一化数据库中的制造数据集统统地与选定的一个制造数据集统计地兼容的方式对数据库进行归一化。 该方法包括通过使用归一化数据库来预测所选择的一个半导体处理的性能。 所选择的半导体工艺对应于所选择的制造数据集。 该方法包括响应于预测的性能来控制半导体处理机。

公开(公告)号：US20100292824A1

公开(公告)日：2010-11-18

申请号：US12465064

申请日：2009-05-13

申请人： Andy Tsen ,  Jo Fei Wang ,  Po-Feng Tsai ,  Ming-Yu Fan ,  Jill Wang ,  Jong-I Mou ,  Sunny Wu

发明人： Andy Tsen ,  Jo Fei Wang ,  Po-Feng Tsai ,  Ming-Yu Fan ,  Jill Wang ,  Jong-I Mou ,  Sunny Wu

IPC分类号： G05B13/04

CPC分类号： G05B13/048 ,  G05B19/41875 ,  Y02P90/22 ,  Y02P90/86

摘要： System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing a key process on a sample number of wafers of a lot of wafers; performing a key inline measurement related to the key process to produce metrology data for the wafers; predicting WAT data from the metrology data using an inline-to-WAT model; and using the predicted WAT data to tune a WAT APC process for controlling a tuning process or a process APC process.

摘要翻译： 描述了实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法。 在一个实施例中，该方法包括对大量晶片的晶片的样本数进行密钥处理; 执行关键过程的关键在线测量以产生晶片的测量数据; 使用直线到WAT模型预测来自计量数据的WAT数据; 并且使用预测的WAT数据来调整用于控制调谐过程或过程APC过程的WAT APC过程。

公开(公告)号：US08108060B2

公开(公告)日：2012-01-31

申请号：US12465064

申请日：2009-05-13

申请人： Andy Tsen ,  Jo Fei Wang ,  Po-Feng Tsai ,  Ming-Yu Fan ,  Jill Wang ,  Jong-I Mou ,  Sunny Wu

发明人： Andy Tsen ,  Jo Fei Wang ,  Po-Feng Tsai ,  Ming-Yu Fan ,  Jill Wang ,  Jong-I Mou ,  Sunny Wu

IPC分类号： G06F19/00 ,  G06F17/18 ,  G06F11/30 ,  G01N37/00

CPC分类号： G05B13/048 ,  G05B19/41875 ,  Y02P90/22 ,  Y02P90/86

摘要： System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing a key process on a sample number of wafers of a lot of wafers; performing a key inline measurement related to the key process to produce metrology data for the wafers; predicting WAT data from the metrology data using an inline-to-WAT model; and using the predicted WAT data to tune a WAT APC process for controlling a tuning process or a process APC process.

摘要翻译： 描述了实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法。 在一个实施例中，该方法包括对大量晶片的晶片的样本数进行密钥处理; 执行关键过程的关键在线测量以产生晶片的测量数据; 使用直线到WAT模型预测来自计量数据的WAT数据; 并且使用预测的WAT数据来调整用于控制调谐过程或过程APC过程的WAT APC过程。

公开(公告)号：US20110238198A1

公开(公告)日：2011-09-29

申请号：US12731407

申请日：2010-03-25

申请人： Po-Feng Tsai ,  Andy Tsen ,  Jo Fei Wang ,  Jong-I Mou

发明人： Po-Feng Tsai ,  Andy Tsen ,  Jo Fei Wang ,  Jong-I Mou

IPC分类号： G05B13/04 ,  G06F15/18

CPC分类号： H01L22/20

摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes collecting a plurality of manufacturing data sets from a plurality of semiconductor processes, respectively. The method includes normalizing each of the manufacturing data sets in a manner so that statistical differences among the manufacturing data sets are reduced. The method includes establishing a database that includes the normalized manufacturing data sets. The method includes normalizing the database in a manner so that the manufacturing data sets in the normalized database are statistically compatible with a selected one of the manufacturing data sets. The method includes predicting performance of a selected one of the semiconductor processes by using the normalized database. The selected semiconductor process corresponds to the selected manufacturing data set. The method includes controlling a semiconductor processing machine in response to the predicted performance.

摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括分别从多个半导体处理中收集多个制造数据集。 该方法包括以制造数据组之间的统计差异减小的方式标准化每个制造数据组。 该方法包括建立包括标准化制造数据集的数据库。 该方法包括以使得归一化数据库中的制造数据集统统地与选定的一个制造数据集统计地兼容的方式对数据库进行归一化。 该方法包括通过使用归一化数据库来预测所选择的一个半导体处理的性能。 所选择的半导体工艺对应于所选择的制造数据集。 该方法包括响应于预测的性能来控制半导体处理机。

公开(公告)号：US08437870B2

公开(公告)日：2013-05-07

申请号：US12478956

申请日：2009-06-05

申请人： Po-Feng Tsai ,  Andy Tsen ,  Jin-Ning Sung

发明人： Po-Feng Tsai ,  Andy Tsen ,  Jin-Ning Sung

IPC分类号： G06F17/50

CPC分类号： G01R31/2894 ,  H01L22/12 ,  H01L22/20

摘要： System and method for implementing a VM APC platform are described. In one embodiment, the VM APC system comprises a process tool for processing a plurality of wafers, a metrology tool for measuring a sample wafer of the plurality of wafers and generating actual metrology data therefor, and a VM model for predicting metrology data for each of the plurality of wafers. The actual metrology data is received from the metrology tool and used to update the VM model. Key variables of the virtual metrology model are updated only in response to a determination that the VM model is inaccurate and parameters of the VM model are updated responsive to receipt of the actual metrology data for the sample wafer of the plurality of wafers. The system also includes an APC controller for receiving the predicted metrology data and the actual metrology data and controlling an operation of the process tool based on the received data.

摘要翻译： 描述了实现VM APC平台的系统和方法。 在一个实施例中，VM APC系统包括用于处理多个晶片的处理工具，用于测量多个晶片中的样品晶片并产生其实际测量数据的计量工具，以及用于预测每个晶片的测量数据的VM模型 多个晶片。 实际计量数据从计量工具中接收并用于更新VM模型。 虚拟测量模型的关键变量仅在响应于确定VM模型不准确并且响应于接收到多个晶片的样本晶片的实际测量数据来更新VM模型的参数而被更新。 该系统还包括用于接收预测计量数据和实际计量数据的APC控制器，并且基于接收到的数据来控制处理工具的操作。

公开(公告)号：US20100312374A1

公开(公告)日：2010-12-09

申请号：US12478956

申请日：2009-06-05

申请人： Po-Feng Tsai ,  Andy Tsen ,  Jin-Ning Sung

发明人： Po-Feng Tsai ,  Andy Tsen ,  Jin-Ning Sung

IPC分类号： G06F17/50

CPC分类号： G01R31/2894 ,  H01L22/12 ,  H01L22/20

摘要： System and method for implementing a VM APC platform are described. In one embodiment, the VM APC system comprises a process tool for processing a plurality of wafers, a metrology tool for measuring a sample wafer of the plurality of wafers and generating actual metrology data therefor, and a VM model for predicting metrology data for each of the plurality of wafers. The actual metrology data is received from the metrology tool and used to update the VM model. Key variables of the virtual metrology model are updated only in response to a determination that the VM model is inaccurate and parameters of the VM model are updated responsive to receipt of the actual metrology data for the sample wafer of the plurality of wafers. The system also includes an APC controller for receiving the predicted metrology data and the actual metrology data and controlling an operation of the process tool based on the received data

摘要翻译： 描述了实现VM APC平台的系统和方法。 在一个实施例中，VM APC系统包括用于处理多个晶片的处理工具，用于测量多个晶片中的样品晶片并产生其实际测量数据的计量工具，以及用于预测每个晶片的测量数据的VM模型 多个晶片。 实际计量数据从计量工具中接收并用于更新VM模型。 虚拟测量模型的关键变量仅在响应于确定VM模型不准确并且响应于接收到多个晶片的样本晶片的实际测量数据来更新VM模型的参数而被更新。 该系统还包括用于接收预测计量数据和实际计量数据的APC控制器，并且基于接收到的数据来控制处理工具的操作