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    Semiconductor device comprising metal gate structures formed by a replacement gate approach and efuses including a silicide
    3.
    发明授权
    Semiconductor device comprising metal gate structures formed by a replacement gate approach and efuses including a silicide 有权
    半导体器件包括通过替换栅极方法形成的金属栅极结构和包括硅化物的熔点

    公开(公告)号：US08497554B2

    公开(公告)日：2013-07-30

    申请号：US12942506

    申请日：2010-11-09

    申请人： Andy Wei ,  Jens Heinrich ,  Ralf Richter

    发明人： Andy Wei ,  Jens Heinrich ,  Ralf Richter

    IPC分类号： H01L23/62

    CPC分类号： H01L23/5256 ,  H01L27/0617 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： In a replacement gate approach for forming high-k metal gate electrode structures, electronic fuses may be provided on the basis of a semiconductor material in combination with a metal silicide by using a recessed surface topography and/or a superior selectivity of the metal silicide material during the replacement gate process. For example, in some illustrative embodiments, electronic fuses may be provided in a recessed portion of an isolation region, thereby avoiding the removal of the semiconductor material when replacing the semiconductor material of the gate electrode structures with a metal-containing electrode material. Consequently, the concept of well-established semiconductor-based electronic fuses may be applied together with sophisticated replacement gate structures of transistors.

    摘要翻译： 在用于形成高k金属栅电极结构的替代栅极方法中，可以通过使用凹陷表面形貌和/或金属硅化物材料的优异选择性，基于半导体材料与金属硅化物的组合来提供电子熔丝 在替换门过程中。 例如，在一些说明性实施例中，电子熔丝可以设置在隔离区域的凹陷部分中，从而避免了当用含金属的电极材料替换栅电极结构的半导体材料时去除半导体材料。 因此，已经确立的基于半导体的电子熔丝的概念可以与晶体管的复杂的替代栅极结构一起应用。

    Semiconductor Device Comprising Metal Gate Structures Formed by a Replacement Gate Approach and eFuses Including a Silicide
    5.
    发明申请
    Semiconductor Device Comprising Metal Gate Structures Formed by a Replacement Gate Approach and eFuses Including a Silicide 有权
    包括通过替代门法形成的金属门结构的半导体器件和包括硅化物的eFuse

    公开(公告)号：US20110241117A1

    公开(公告)日：2011-10-06

    申请号：US12942506

    申请日：2010-11-09

    申请人： Andy Wei ,  Jens Heinrich ,  Ralf Richter

    发明人： Andy Wei ,  Jens Heinrich ,  Ralf Richter

    IPC分类号： H01L23/62 ,  H01L21/336

    CPC分类号： H01L23/5256 ,  H01L27/0617 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： In a replacement gate approach for forming high-k metal gate electrode structures, electronic fuses may be provided on the basis of a semiconductor material in combination with a metal silicide by using a recessed surface topography and/or a superior selectivity of the metal silicide material during the replacement gate process. For example, in some illustrative embodiments, electronic fuses may be provided in a recessed portion of an isolation region, thereby avoiding the removal of the semiconductor material when replacing the semiconductor material of the gate electrode structures with a metal-containing electrode material. Consequently, the concept of well-established semiconductor-based electronic fuses may be applied together with sophisticated replacement gate structures of transistors.

    摘要翻译： 在用于形成高k金属栅电极结构的替代栅极方法中，可以通过使用凹陷表面形貌和/或金属硅化物材料的优异选择性，基于半导体材料与金属硅化物的组合来提供电子熔丝 在替换门过程中。 例如，在一些说明性实施例中，电子熔丝可以设置在隔离区域的凹陷部分中，从而避免了当用含金属的电极材料替换栅电极结构的半导体材料时去除半导体材料。 因此，已经确立的基于半导体的电子熔丝的概念可以与晶体管的复杂的替代栅极结构一起应用。

    Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gates
    7.
    发明授权
    Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gates 有权
    在包括金属栅极的半导体器件中，在较低高度处形成半导体电阻器

    公开(公告)号：US08658509B2

    公开(公告)日：2014-02-25

    申请号：US12907731

    申请日：2010-10-19

    申请人： Ralf Richter ,  Jens Heinrich ,  Andy Wei

    发明人： Ralf Richter ,  Jens Heinrich ,  Andy Wei

    IPC分类号： H01L21/20 ,  H01L27/06

    CPC分类号： H01L29/66545 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/6659 ,  H01L29/7833

    摘要： In sophisticated semiconductor devices comprising high-k metal gate electrode structures formed on the basis of a replacement gate approach, semiconductor-based resistors may be provided without contributing to undue process complexity in that the resistor region is recessed prior to depositing the semiconductor material of the gate electrode structure. Due to the difference in height level, a reliable protective dielectric material layer is preserved above the resistor structure upon exposing the semiconductor material of the gate electrode structure and removing the same on the basis of selective etch recipes. Consequently, well-established semiconductor materials, such as polysilicon, may be used for the resistive structures in complex semiconductor devices, substantially without affecting the overall process sequence for forming the sophisticated replacement gate electrode structures.

    摘要翻译： 在包括基于替换栅极方法形成的高k金属栅极电极结构的复杂半导体器件中，可以提供基于半导体的电阻器，而不会造成过度的工艺复杂性，因为电阻器区域在沉积半导体材料 栅电极结构。 由于高度水平的差异，在暴露栅极电极结构的半导体材料并基于选择性蚀刻配方将其去除时，可靠的保护介电材料层被保留在电阻器结构之上。 因此，诸如多晶硅的公认的半导体材料可以用于复合半导体器件中的电阻结构，基本上不影响用于形成复杂的替代栅电极结构的整个工艺顺序。

    CAP REMOVAL IN A HIGH-K METAL GATE ELECTRODE STRUCTURE BY USING A SACRIFICIAL FILL MATERIAL
    8.
    发明申请
    CAP REMOVAL IN A HIGH-K METAL GATE ELECTRODE STRUCTURE BY USING A SACRIFICIAL FILL MATERIAL 有权
    通过使用真空填充材料在高K金属电极结构中去除CAP

    公开(公告)号：US20110129980A1

    公开(公告)日：2011-06-02

    申请号：US12905655

    申请日：2010-10-15

    申请人： Jens Heinrich ,  Frank Seliger ,  Ralf Richter ,  Markus Lenski

    发明人： Jens Heinrich ,  Frank Seliger ,  Ralf Richter ,  Markus Lenski

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823828 ,  H01L21/823807 ,  H01L29/7843

    摘要： Dielectric cap layers of sophisticated high-k metal gate electrode structures may be efficiently removed on the basis of a sacrificial fill material, thereby reliably preserving integrity of a protective sidewall spacer structure, which in turn may result in superior uniformity of the threshold voltage of the transistors. The sacrificial fill material may be provided in the form of an organic material that may be reduced in thickness on the basis of a wet developing process, thereby enabling a high degree of process controllability.

    摘要翻译： 可以基于牺牲填充材料有效地去除复杂的高k金属栅极电极结构的介电盖层，从而可靠地保持保护性侧壁间隔结构的完整性，这又可以导致优异的阈值电压均匀性 晶体管。 牺牲填充材料可以以有机材料的形式提供，其可以基于湿式显影工艺而减小厚度，从而能够实现高度的工艺可控性。

    Method of Forming Metal Gates and Metal Contacts in a Common Fill Process
    10.
    发明申请
    Method of Forming Metal Gates and Metal Contacts in a Common Fill Process 有权
    在普通填充工艺中形成金属门和金属触点的方法

    公开(公告)号：US20120282765A1

    公开(公告)日：2012-11-08

    申请号：US13100798

    申请日：2011-05-04

    申请人： Ronny Pfützner ,  Ralf Richter ,  Jens Heinrich

    发明人： Ronny Pfützner ,  Ralf Richter ,  Jens Heinrich

    IPC分类号： H01L21/3213

    CPC分类号： H01L21/823871 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823828

    摘要： The method described herein involves a method of forming metal gates and metal contacts in a common fill process. The method may involve forming a gate structure comprising a sacrificial gate electrode material, forming at least one conductive contact opening in a layer of insulating material positioned adjacent the gate structure, removing the sacrificial gate electrode material to thereby define a gate electrode opening, and performing a common deposition process to fill the conductive contact opening and the gate electrode opening with a conductive fill material.

    摘要翻译： 本文描述的方法涉及在公共填充过程中形成金属栅极和金属触点的方法。 该方法可以包括形成包括牺牲栅电极材料的栅极结构，在邻近栅结构定位的绝缘材料层中形成至少一个导电接触开口，去除牺牲栅电极材料，从而限定栅电极开口，并执行 用于用导电填充材料填充导电接触开口和栅电极开口的公共沉积工艺。