公开(公告)号：US20110129980A1

公开(公告)日：2011-06-02

申请号：US12905655

申请日：2010-10-15

申请人： Jens Heinrich ,  Frank Seliger ,  Ralf Richter ,  Markus Lenski

发明人： Jens Heinrich ,  Frank Seliger ,  Ralf Richter ,  Markus Lenski

IPC分类号： H01L21/336

CPC分类号： H01L21/823828 ,  H01L21/823807 ,  H01L29/7843

摘要： Dielectric cap layers of sophisticated high-k metal gate electrode structures may be efficiently removed on the basis of a sacrificial fill material, thereby reliably preserving integrity of a protective sidewall spacer structure, which in turn may result in superior uniformity of the threshold voltage of the transistors. The sacrificial fill material may be provided in the form of an organic material that may be reduced in thickness on the basis of a wet developing process, thereby enabling a high degree of process controllability.

摘要翻译： 可以基于牺牲填充材料有效地去除复杂的高k金属栅极电极结构的介电盖层，从而可靠地保持保护性侧壁间隔结构的完整性，这又可以导致优异的阈值电压均匀性 晶体管。 牺牲填充材料可以以有机材料的形式提供，其可以基于湿式显影工艺而减小厚度，从而能够实现高度的工艺可控性。

公开(公告)号：US08329526B2

公开(公告)日：2012-12-11

申请号：US12905655

申请日：2010-10-15

申请人： Jens Heinrich ,  Frank Seliger ,  Ralf Richter ,  Markus Lenski

发明人： Jens Heinrich ,  Frank Seliger ,  Ralf Richter ,  Markus Lenski

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/8238

CPC分类号： H01L21/823828 ,  H01L21/823807 ,  H01L29/7843

摘要： Dielectric cap layers of sophisticated high-k metal gate electrode structures may be efficiently removed on the basis of a sacrificial fill material, thereby reliably preserving integrity of a protective sidewall spacer structure, which in turn may result in superior uniformity of the threshold voltage of the transistors. The sacrificial fill material may be provided in the form of an organic material that may be reduced in thickness on the basis of a wet developing process, thereby enabling a high degree of process controllability.

摘要翻译： 可以基于牺牲填充材料有效地去除复杂的高k金属栅极电极结构的介电盖层，从而可靠地保持保护性侧壁间隔结构的完整性，这又可以导致优异的阈值电压均匀性 晶体管。 牺牲填充材料可以以有机材料的形式提供，其可以基于湿式显影工艺而减小厚度，从而能够实现高度的工艺可控性。

公开(公告)号：US20110073956A1

公开(公告)日：2011-03-31

申请号：US12886765

申请日：2010-09-21

申请人： Jens Heinrich ,  Ralf Richter ,  Katja Steffen ,  Johannes Groschopf ,  Frank Seliger ,  Andreas Ott ,  Manfred Heinz ,  Andy Wei

发明人： Jens Heinrich ,  Ralf Richter ,  Katja Steffen ,  Johannes Groschopf ,  Frank Seliger ,  Andreas Ott ,  Manfred Heinz ,  Andy Wei

IPC分类号： H01L27/06 ,  H01L21/02 ,  H01L21/336

CPC分类号： H01L27/0629

摘要： In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.

摘要翻译： 在替代栅极方法中，可以在湿化学蚀刻工艺期间有效地去除多晶硅材料，同时电阻结构中的半导体材料可以被基本保持。 为此，可以将诸如氙的物质并入电阻结构的半导体材料中，从而赋予半导体材料显着增加的蚀刻电阻率。 氙气可以在任何适当的生产阶段进行。

公开(公告)号：US08338306B2

公开(公告)日：2012-12-25

申请号：US12886765

申请日：2010-09-21

申请人： Jens Heinrich ,  Ralf Richter ,  Katja Steffen ,  Johannes Groschopf ,  Frank Seliger ,  Andreas Ott ,  Manfred Heinz ,  Andy Wei

发明人： Jens Heinrich ,  Ralf Richter ,  Katja Steffen ,  Johannes Groschopf ,  Frank Seliger ,  Andreas Ott ,  Manfred Heinz ,  Andy Wei

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L27/0629

摘要： In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.

摘要翻译： 在替代栅极方法中，可以在湿化学蚀刻工艺期间有效地去除多晶硅材料，同时电阻结构中的半导体材料可以被基本保持。 为此，可以将诸如氙的物质并入电阻结构的半导体材料中，从而赋予半导体材料显着增加的蚀刻电阻率。 氙气可以在任何适当的生产阶段进行。

公开(公告)号：US07951677B2

公开(公告)日：2011-05-31

申请号：US12894985

申请日：2010-09-30

申请人： Jens Heinrich ,  Thomas Werner ,  Frank Seliger ,  Frank Richter

发明人： Jens Heinrich ,  Thomas Werner ,  Frank Seliger ,  Frank Richter

IPC分类号： H01L21/336

CPC分类号： H01L21/82385 ,  H01L21/28088 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833

摘要： In a replacement gate approach, a top area of a gate opening has a superior cross-sectional shape which is accomplished on the basis of a plasma assisted etch process or an ion sputter process. During the process, a sacrificial fill material protects sensitive materials, such as a high-k dielectric material and a corresponding cap material. Consequently, the subsequent deposition of a work function adjusting material layer may not result in a surface topography which may result in a non-reliable filling-in of the electrode metal. In some illustrative embodiments, the sacrificial fill material may also be used as a deposition mask for avoiding the deposition of the work function adjusting metal in certain gate openings in which a different type of work function adjusting species is required.

摘要翻译： 在替代栅极方法中，栅极开口的顶部区域具有优异的横截面形状，其基于等离子体辅助蚀刻工艺或离子溅射工艺来实现。 在该过程中，牺牲填充材料保护敏感材料，例如高k电介质材料和对应的帽材料。 因此，随后的功函调整材料层的沉积可能不会导致表面形貌，这可能导致不可靠地填充电极金属。 在一些说明性实施例中，牺牲填充材料也可以用作沉积掩模，以避免功能调节金属沉积在需要不同类型的功能调节物质的某些门开口中。

公开(公告)号：US20110104880A1

公开(公告)日：2011-05-05

申请号：US12894985

申请日：2010-09-30

申请人： Jens Heinrich ,  Thomas Werner ,  Frank Seliger ,  Frank Richter

发明人： Jens Heinrich ,  Thomas Werner ,  Frank Seliger ,  Frank Richter

IPC分类号： H01L21/71

CPC分类号： H01L21/82385 ,  H01L21/28088 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833

摘要： In a replacement gate approach, a top area of a gate opening has a superior cross-sectional shape which is accomplished on the basis of a plasma assisted etch process or an ion sputter process. During the process, a sacrificial fill material protects sensitive materials, such as a high-k dielectric material and a corresponding cap material. Consequently, the subsequent deposition of a work function adjusting material layer may not result in a surface topography which may result in a non-reliable filling-in of the electrode metal. In some illustrative embodiments, the sacrificial fill material may also be used as a deposition mask for avoiding the deposition of the work function adjusting metal in certain gate openings in which a different type of work function adjusting species is required.

摘要翻译： 在替代栅极方法中，栅极开口的顶部区域具有优异的横截面形状，其基于等离子体辅助蚀刻工艺或离子溅射工艺来实现。 在该过程中，牺牲填充材料保护敏感材料，例如高k电介质材料和对应的帽材料。 因此，随后的功函调整材料层的沉积可能不会导致表面形貌，这可能导致不可靠地填充电极金属。 在一些说明性实施例中，牺牲填充材料也可以用作沉积掩模，以避免功能调节金属沉积在需要不同类型的功能调节物质的某些门开口中。

公开(公告)号：US09034744B2

公开(公告)日：2015-05-19

申请号：US12942200

申请日：2010-11-09

申请人： Ralf Richter ,  Jens Heinrich ,  Andy Wei

发明人： Ralf Richter ,  Jens Heinrich ,  Andy Wei

IPC分类号： H01L29/772 ,  H01L21/8238 ,  H01L21/768 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/823842 ,  H01L21/76819 ,  H01L21/823807 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833 ,  H01L29/7843

摘要： In a replacement gate approach, the exposure of the placeholder material of the gate electrode structures may be accomplished on the basis of an etch process, thereby avoiding the introduction of process-related non-uniformities, which are typically associated with a complex polishing process for exposing the top surface of the placeholder material. In some illustrative embodiments, the placeholder material may be exposed by an etch process based on a sacrificial mask material.

摘要翻译： 在替代栅极方法中，栅极电极结构的占位符材料的暴露可以基于蚀刻工艺来实现，从而避免引入与工艺相关的非均匀性，这通常与复杂的抛光工艺相关 暴露占位符材料的顶面。 在一些说明性实施例中，占位符材料可以通过基于牺牲掩模材料的蚀刻工艺曝光。

公开(公告)号：US08951907B2

公开(公告)日：2015-02-10

申请号：US12968068

申请日：2010-12-14

申请人： Ralf Richter ,  Jens Heinrich ,  Holger Schuehrer

发明人： Ralf Richter ,  Jens Heinrich ,  Holger Schuehrer

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L21/285 ,  H01L23/485

CPC分类号： H01L21/76808 ,  H01L21/28512 ,  H01L21/76802 ,  H01L21/76897 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a layer of dielectric material overlying a doped region formed in a semiconductor substrate adjacent to a gate structure and forming a conductive contact in the layer of dielectric material. The conductive contact overlies and electrically connects to the doped region. The method continues by forming a second layer of dielectric material overlying the conductive contact, forming a voided region in the second layer overlying the conductive contact, forming a third layer of dielectric material overlying the voided region, and forming another voided region in the third layer overlying at least a portion of the voided region in the second layer. The method continues by forming a conductive material that fills both voided regions to contact the conductive contact.

摘要翻译： 提供了半导体器件结构和相关制造方法的装置。 一种用于制造半导体器件结构的方法包括形成覆盖在与栅极结构相邻的半导体衬底中形成的掺杂区域的介电材料层，并在该介电材料层中形成导电接触。 导电接触覆盖并电连接到掺杂区域。 该方法继续通过形成覆盖导电接触的第二层介电材料，在覆盖导电接触的第二层中形成空隙区域，形成覆盖空隙区域的第三层电介质材料，以及在第三层中形成另一个空隙区域 覆盖第二层中的空隙区域的至少一部分。 该方法通过形成填充两个空隙区域以接触导电触点的导电材料而继续。

公开(公告)号：US08497554B2

公开(公告)日：2013-07-30

申请号：US12942506

申请日：2010-11-09

申请人： Andy Wei ,  Jens Heinrich ,  Ralf Richter

发明人： Andy Wei ,  Jens Heinrich ,  Ralf Richter

IPC分类号： H01L23/62

CPC分类号： H01L23/5256 ,  H01L27/0617 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： In a replacement gate approach for forming high-k metal gate electrode structures, electronic fuses may be provided on the basis of a semiconductor material in combination with a metal silicide by using a recessed surface topography and/or a superior selectivity of the metal silicide material during the replacement gate process. For example, in some illustrative embodiments, electronic fuses may be provided in a recessed portion of an isolation region, thereby avoiding the removal of the semiconductor material when replacing the semiconductor material of the gate electrode structures with a metal-containing electrode material. Consequently, the concept of well-established semiconductor-based electronic fuses may be applied together with sophisticated replacement gate structures of transistors.

摘要翻译： 在用于形成高k金属栅电极结构的替代栅极方法中，可以通过使用凹陷表面形貌和/或金属硅化物材料的优异选择性，基于半导体材料与金属硅化物的组合来提供电子熔丝 在替换门过程中。 例如，在一些说明性实施例中，电子熔丝可以设置在隔离区域的凹陷部分中，从而避免了当用含金属的电极材料替换栅电极结构的半导体材料时去除半导体材料。 因此，已经确立的基于半导体的电子熔丝的概念可以与晶体管的复杂的替代栅极结构一起应用。

公开(公告)号：US08492269B2

公开(公告)日：2013-07-23

申请号：US13234529

申请日：2011-09-16

申请人： Jens Heinrich ,  Ralf Richter ,  Torsten Huisinga ,  Kai Frohberg

发明人： Jens Heinrich ,  Ralf Richter ,  Torsten Huisinga ,  Kai Frohberg

IPC分类号： H01L21/4763

CPC分类号： H01L21/76807 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53238 ,  H01L23/53257 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

摘要： In sophisticated semiconductor devices, superior contact resistivity may be accomplished for a given contact configuration by providing hybrid contact elements, at least a portion of which may be comprised of a highly conductive material, such as copper. To this end, a well-established contact material, such as tungsten, may be used as buffer material in order to preserve integrity of sensitive device areas upon depositing the highly conductive metal.

摘要翻译： 在复杂的半导体器件中，通过提供混合接触元件，对于给定的接触构型可以实现优异的接触电阻率，其中至少一部分可由高导电材料（例如铜）构成。 为此，可以使用诸如钨的良好接触材料作为缓冲材料，以便在沉积高导电性金属时保持敏感器件区域的完整性。