公开(公告)号：US06583063B1

公开(公告)日：2003-06-24

申请号：US09263634

申请日：1999-03-05

申请人： Anisul Khan ,  Dragan Podlesnik ,  Nam-Hun Kim ,  Gene Lee

发明人： Anisul Khan ,  Dragan Podlesnik ,  Nam-Hun Kim ,  Gene Lee

IPC分类号： H01L21302

CPC分类号： H01L21/32137

摘要： A method of etching silicon using a plasma generated from a gas comprising fluorine (F), oxygen (O), hydrogen (H) and carbon (C).

摘要翻译： 使用由包含氟（F），氧（O），氢（H）和碳（C）的气体产生的等离子体来蚀刻硅的方法。

公开(公告)号：US06235643B1

公开(公告)日：2001-05-22

申请号：US09371966

申请日：1999-08-10

申请人： David Mui ,  Dragan Podlesnik ,  Wei Liu ,  Gene Lee ,  Nam-Hun Kim ,  Jeff Chinn

发明人： David Mui ,  Dragan Podlesnik ,  Wei Liu ,  Gene Lee ,  Nam-Hun Kim ,  Jeff Chinn

IPC分类号： H01L2100

CPC分类号： H01L21/76232 ,  H01L21/3065 ,  H01L21/3081

摘要： The present invention provides straight forward methods for plasma etching a trench having rounded top corners, or rounded bottom corners, or both in a silicon substrate. A first method for creating a rounded top corner on the etched silicon trench comprises etching both an overlying silicon oxide layer and an upper portion of the silicon substrate during a “break-through” step which immediately precedes the step in which the silicon trench is etched. The plasma feed gas for the break-through step comprises carbon and fluorine. In this method, the photoresist layer used to pattern the etch stack is preferably not removed prior to the break-through etching step. Subsequent to the break-through step, a trench is etched to a desired depth in the silicon substrate using a different plasma feed gas composition. A second method for creating a rounded top corner on the etched silicon trench comprises formation of a built-up extension on the sidewall of an overlying patterned silicon nitride hard mask during etch (break-through) of a silicon oxide adhesion layer which lies between the hard mask and a silicone substrate. The built-up extension upon the silicon nitride sidewall acts as a sacrificial masking material during etch of the silicon trench, delaying etching of the silicon at the outer edges of the top of the trench. This permits completion of trench etching with delayed etching of the top corner of the trench and provides a more gentle rounding (increased radius) at the top corners of the trench. During the etching of the silicon trench to its final dimensions, it is desirable to round the bottom corners of the finished silicon trench. We have discovered that a more rounded bottom trench corner is obtained using a two-step silicon etch process where the second step of the process is carried out at a higher process chamber pressure than the first step.

摘要翻译： 本发明提供了用于在硅衬底中等离子体蚀刻具有圆形顶角或圆形底角或两者的沟槽的直接方法。 用于在蚀刻的硅沟槽上形成圆角顶角的第一种方法包括：在“穿透”步骤​​期间蚀刻覆盖硅氧化物层和硅衬底的上部两者之间，其中硅裂纹之前的步骤 。 用于穿透步骤的等离子体进料气体包括碳和氟。 在该方法中，用于图案化蚀刻叠层的光致抗蚀剂层优选在穿透蚀刻步骤之前不被去除。 在突破步骤之后，使用不同的等离子体进料气体组合物将沟槽蚀刻到硅衬底中的所需深度。 用于在蚀刻的硅沟槽上产生圆角顶角的第二种方法包括在位于第二层之间的氧化硅粘合层的蚀刻（穿透）期间在覆盖的图案化氮化硅硬掩模的侧壁上形成积层延伸。 硬面罩和硅胶基材。 在硅氮化物侧壁上的累积延伸在硅沟槽的蚀刻期间用作牺牲掩模材料，延迟在沟槽顶部的外边缘处的硅的蚀刻。 这允许通过延迟蚀刻沟槽的顶角完成沟槽蚀刻，并且在沟槽的顶角提供更温和的圆化（增加的半径）。 在将硅沟槽蚀刻到其最终尺寸期间，期望圆形完成的硅沟槽的底角。 我们已经发现，使用两步硅蚀刻工艺获得更圆的底部沟槽角，其中该工艺的第二步骤在比第一步高的处理室压力下进行。

公开(公告)号：US20070058106A1

公开(公告)日：2007-03-15

申请号：US10576053

申请日：2004-10-21

申请人： Hyoung-Joo Kim ,  Jin-Seob Byun ,  Dong-Woo Kim ,  Nam-Hun Kim ,  Sang-Yu Lee

发明人： Hyoung-Joo Kim ,  Jin-Seob Byun ,  Dong-Woo Kim ,  Nam-Hun Kim ,  Sang-Yu Lee

IPC分类号： G02F1/1335

CPC分类号： H01J65/046 ,  G02F1/133604 ,  H01J61/305

摘要： A surface light source apparatus (100) includes a main body (105) having a space, and a plurality of space division members (130) being disposed in the space so that the space division members (130) are extended in a first direction and arranged in a second direction spaced apart from one another to divide the space into a plurality of light emitting spaces (112). The space division members (130) include a plurality of connecting holes (132). At least two of the connecting holes (132) have different heights from one another with respect to a bottom surface of the main body (105) to have the light emitting spaces connected to one another through the connecting holes (132). The surface light source apparatus also includes a visible light emitting unit to generate a visible light in the light emitting spaces. Therefore, the brightness-uniformity of the surface light source apparatus and an image display quality of a display device are improved.

摘要翻译： 表面光源装置（100）具有空间的主体（105），并且在该空间内配置有多个间隔部件（130），使空间分割部件（130）沿第一方向延伸， 布置在彼此间隔开的第二方向上，以将空间分成多个发光空间（112）。 间隔部件（130）包括多个连接孔（132）。 至少两个连接孔（132）相对于主体（105）的底面彼此具有不同的高度，以使发光空间通过连接孔（132）相互连接。 表面光源装置还包括在发光空间中产生可见光的可见光发射单元。 因此，提高了表面光源装置的亮度均匀性和显示装置的图像显示质量。

公开(公告)号：US06783626B2

公开(公告)日：2004-08-31

申请号：US09859039

申请日：2001-05-14

申请人： Nam-Hun Kim ,  Chong Hwan Chu

发明人： Nam-Hun Kim ,  Chong Hwan Chu

IPC分类号： H05H100

CPC分类号： H01L21/67253 ,  C23C16/4401 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/67069

摘要： A substrate processing apparatus has a chamber having a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and an exhaust to exhaust the gas. A detector is adapted to detect a first intensity of a first wavelength of a radiation emission from an energized gas in the chamber and generate a first signal in relation to the first intensity and to detect a second intensity of a second wavelength of the radiation emission and generate a second signal in relation to the second intensity. A controller receives the first and second signals from the detector, performs a mathematical operation on the first and second signals to determine a value related to a condition of the chamber, and treats the chamber in relation to the value by providing instructions to operate one or more of the substrate transport, substrate support, gas supply, gas energizer and gas exhaust.

摘要翻译： 基板处理装置具有：具有将基板输送到室内的基板支撑体上的基板输送的腔室，在该腔室内提供气体的气体供给装置，对该气体进行通电的气体增压器以及排出该气体的排气口。 检测器适于检测来自腔室中的通电气体的辐射发射的第一波长的第一强度，并产生相对于第一强度的第一信号，并且检测辐射发射的第二波长的第二强度， 产生相对于第二强度的第二信号。 控制器接收来自检测器的第一和第二信号，对第一和第二信号执行数学运算以确定与室的状况相关的值，并通过提供操作一个或多个信号的指令来对该室进行处理 更多的基板输送，基板支撑，气体供应，气体增压器和排气。

公开(公告)号：US06620575B2

公开(公告)日：2003-09-16

申请号：US09875069

申请日：2001-06-05

申请人： Nam-Hun Kim ,  Jeffrey D. Chinn

发明人： Nam-Hun Kim ,  Jeffrey D. Chinn

IPC分类号： G06F736

CPC分类号： H01L21/32139 ,  H01L21/32137

摘要： The present invention pertains to a method for depositing built-up structures on the surface of patterned masking material used for semiconductor device fabrication. Such built-up structures are useful in achieving critical dimensions in the fabricated device. The composition of the built-up structure to be fabricated is dependant upon the plasma etchants used during etching of underlying substrates and on the composition of the substrate material directly underlying the masking material. One preferred method of the present invention for depositing built-up structures upon a patterned mask surface comprises the following steps: (a) providing a patterned mask surface, wherein said patterned mask rests on an underlying substrate; and (b) depositing a polymeric built-up structure over at least a portion of said patterned mask surface using a plasma formed from a source gas comprising Cl2, a compound which comprises fluorine, and an inert gas which provides physical bombardment of surfaces contacted by said plasma.

摘要翻译： 本发明涉及用于在用于半导体器件制造的图案化掩模材料的表面上沉积积聚结构的方法。 这种组合结构可用于在制造的装置中实现临界尺寸。 要制造的积层结构的组成取决于在蚀刻下面的衬底期间使用的等离子体蚀刻剂以及直接在掩模材料下面的衬底材料的组成。 本发明的一种优选的方法用于将图案化掩模表面上的堆积结构沉积在一起，包括以下步骤：（a）提供图案化掩模表面，其中所述图案化掩模位于下面的基底上; 和（b）使用由包含Cl 2的源气体形成的等离子体形成的等离子体积聚结构，所述源气体包括氟化合物，以及惰性气体，所述惰性气体提供物理轰击与 说等离子体

公开(公告)号：US06372151B1

公开(公告)日：2002-04-16

申请号：US09362929

申请日：1999-07-27

申请人： Taeho Shin ,  Nam-Hun Kim ,  Jeffrey D. Chinn

发明人： Taeho Shin ,  Nam-Hun Kim ,  Jeffrey D. Chinn

IPC分类号： B44C122

CPC分类号： H01L21/32137

摘要： The method of present invention etches a layer of polysilicon formed on a substrate disposed within a substrate processing chamber. The method flows an etchant gas including sulfur hexafluoride, an oxygen source and a nitrogen source into the processing chamber and ignites a plasma from the etchant gas to etch the polysilicon formed over the substrate. In a preferred embodiment, the etchant gas consists essentially of SF6, molecular oxygen (O2) and molecular nitrogen (N2). In a more preferred embodiment the etchant gas includes a volume ratio of molecular oxygen to the sulfur hexafluoride of between 0.5:1 and 1:1 inclusive and a volume ratio of the sulfur hexafluoride to molecular nitrogen of between 1:1 and 4:1 inclusive. In an even more preferred embodiment, the volume ratio of O2 to sulfur hexafluoride is between 0.5:1 and 1:1 inclusive and the volume ratio of sulfur hexafluoride to N2 is between 1.5:1 and 2:1 inclusive.

摘要翻译： 本发明的方法蚀刻形成在设置在衬底处理室内的衬底上的多晶硅层。 该方法将包括六氟化硫，氧源和氮源的蚀刻剂气体流入处理室，并且从蚀刻剂气体点燃等离子体以蚀刻形成在衬底上的多晶硅。 在优选的实施方案中，蚀刻剂气体基本上由SF 6，分子氧（O 2）和分子氮（N 2）组成。 在更优选的实施方案中，蚀刻剂气体包括分子氧与六氟化硫的体积比在0.5:1至1:1之间，六氟化硫与分子氮的体积比在1:1至4:1之间，包括 。 在更优选的实施方案中，O 2与六氟化硫的体积比在0.5:1和1:1之间，并且六氟化硫与N 2的体积比在1.5:1和2:1之间。

公开(公告)号：US06312616B1

公开(公告)日：2001-11-06

申请号：US09206201

申请日：1998-12-03

申请人： Jeffrey Chinn ,  Taeho Shin ,  Nam-Hun Kim

发明人： Jeffrey Chinn ,  Taeho Shin ,  Nam-Hun Kim

IPC分类号： H01L21461

CPC分类号： H01L21/32137

摘要： A method of etching polysilicon using a fluorinated gas chemistry to provide an etch rate in excess of 10,000 Å/min and a photoresist selectivity of better than 3:1. The method is accomplished using a combination of a fluorinated gas and a fluorocarbon gas, e.g., 50-60 sccm of SF6, 1-40 sccm of CHF3, and 40-50 sccm of O2 with a total chamber pressure of 4-60 mTorr. The power applied to the etch chemistry to produce an etching plasma is 400-1500 watts of inductive source power (at 13.56 MHz) via an inductively coupled antenna and 200-1500 watts (at 12.56 MHz) of cathode bias power applied via a cathode electrode within a wafer support pedestal. The pedestal supporting the wafer was maintained at 0-50 degrees C.

摘要翻译： 使用氟化气体化学法蚀刻多晶硅以提供超过10,000埃的蚀刻速率和优于3:1的光致抗蚀剂选择性的方法。 该方法使用氟化气体和碳氟化合物气体的组合来实现，例如50-60sccm的SF 6，1-40sccm的CHF 3和40-50sccm的O 2，总室压力为4-60mTorr。 施加到蚀刻化学品以产生蚀刻等离子体的功率通过电感耦合天线为400-1500瓦特的感应源功率（13.56MHz），通过阴极电极施加200-1500瓦特（12.56MHz）阴极偏置功率 在晶片支撑基座内。 支撑晶片的底座保持在0-50摄氏度

公开(公告)号：US20070084405A1

公开(公告)日：2007-04-19

申请号：US10570942

申请日：2004-09-08

申请人： Nam-Hun Kim

发明人： Nam-Hun Kim

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/321 ,  H05H1/46

摘要： There is provided an adaptive plasma source, which is arranged at an upper portion of a reaction chamber having a reaction space to form plasma and is supplied with RF (radio frequency) power from an external RF power source to form an electric field inside the reaction space. The adaptive plasma source includes a conductive bushing and at least two unit coils. The bushing is coupled to the RF power source and arranged at an upper central portion of the reaction chamber. The at least two unit coils are branched from the bushing and surround the bushing in a spiral shape and have the number of turns equal to a×(b/m), where a and b are positive integers and m is the number of the unit coils.

摘要翻译： 提供了一种自适应等离子体源，其被布置在具有反应空间的反应室的上部以形成等离子体，并且从外部RF电源提供RF（射频）功率以在反应中形成电场 空间。 自适应等离子体源包括导电衬套和至少两个单元线圈。 衬套连接到RF电源并且布置在反应室的上部中心部分。 至少两个单元线圈从衬套分支并围绕套管以螺旋形状并且具有等于ax（b / m）的匝数，其中a和b是正整数，m是单位线圈的数量 。

公开(公告)号：US20050012875A1

公开(公告)日：2005-01-20

申请号：US10890363

申请日：2004-07-13

申请人： Joong-Hyun Kim ,  Ki-Yeon Lee ,  Sang-Yu Lee ,  Nam-Hun Kim ,  Hae-Soo Ha

发明人： Joong-Hyun Kim ,  Ki-Yeon Lee ,  Sang-Yu Lee ,  Nam-Hun Kim ,  Hae-Soo Ha

IPC分类号： F21V8/00 ,  G02F1/1335 ,  G02F1/13357 ,  H01J9/24 ,  H01J61/30 ,  H01J61/35 ,  H01J65/00

CPC分类号： G02F1/133615

摘要： In a method of manufacturing a surface light source, a plurality of partition walls is formed on a lower substrate. The partition walls generate a first stress in the lower substrate along a first direction. A reflective layer is formed on the lower substrate. The reflective layer generates a second stress in the lower substrate along a second direction. After forming a fluorescent layer on the reflective layer and beneath an upper substrate, the upper and lower substrates are sealed to form discharge spaces between the upper and lower substrates.

摘要翻译： 在制造面光源的方法中，在下基板上形成多个分隔壁。 分隔壁沿着第一方向在下基板中产生第一应力。 在下基板上形成反射层。 反射层沿着第二方向在下基板中产生第二应力。 在反射层上形成荧光层并且在上基板之下形成荧光层，上下基板被密封，从而在上基板和下基板之间形成放电空间。