公开(公告)号：US6030887A

公开(公告)日：2000-02-29

申请号：US30894

申请日：1998-02-26

Applicant: Ankur H. Desai ,  David L. Vadnais ,  Robert W. Standley

Inventor： Ankur H. Desai ,  David L. Vadnais ,  Robert W. Standley

IPC: C30B33/00 ,  G01B7/34 ,  H01L21/20 ,  H01L21/3065 ,  H01L21/66

CPC classification number: C30B29/06 ,  C30B33/00 ,  G01B7/08 ,  G01B7/345 ,  H01L21/3065 ,  H01L22/20 ,  Y10S438/974

Abstract: Process for the preparation of an epitaxial wafer having a total thickness variation and/or site total indicated reading of less than about 1.0 .mu.ms. The distance between the front and back surfaces of the epitaxial wafer at discrete positions on the front surface is measured to generate thickness profile data. Additional stock is removed from the front surface of the epitaxial wafer in a stock removal step to reduce the thickness of the epitaxial wafer to the target thickness, T.sub.t, with the amount of stock being removed at each of said discrete positions being determined after taking into account the thickness profile data and T.sub.t.

Abstract translation: 具有总厚度变化和/或部位总数的外延晶片的制备方法指示读数小于约1.0微米。 测量在前表面上离散位置处的外延晶片的前表面和后表面之间的距离以产生厚度分布数据。 在外推晶片的前表面从原料去除步骤中除去额外的原料，以将外延晶片的厚度减小到目标厚度Tt，其中在每个所述离散位置上去除的原料量在进入 记录厚度剖面数据和Tt。

公开(公告)号：US5422316A

公开(公告)日：1995-06-06

申请号：US214969

申请日：1994-03-18

Applicant: Ankur H. Desai ,  Michael S. Wisnieski ,  David I. Golland

Inventor： Ankur H. Desai ,  Michael S. Wisnieski ,  David I. Golland

IPC: B24B37/013 ,  B24B37/08 ,  B24B37/28 ,  H01L21/465

CPC classification number: B24B37/08 ,  B24B37/013 ,  B24B37/28 ,  Y10S438/977

Abstract: A semiconductor wafer polisher of the present invention for polishing at least one semiconductor wafer to flatten a first face of the wafer and reduce the thickness of the wafer from an initial thickness t.sub.1 to a predetermined final thickness t.sub.2. The polisher comprises a first surface including a polishing surface portion, a second surface including a second surface portion, and a wafer carrier for holding the semiconductor wafer between the polishing surface portion and the second surface portion. At least one polishing limiter is between the first and second surfaces for limiting the reduction in thickness of the wafer. The wafer carrier and polishing limiter are integrally formed such that the polishing limiter and wafer carrier constitute a single unitary piece. The polishing limiter has at least one rubbing surface adapted for rubbing against one of the first and second surfaces and is sized and configured such that the rubbing surface is spaced axially from the one of the first and second surfaces when the semiconductor wafer has the thickness t.sub.1 and such that the rubbing surface rubs against the one of the first and second surfaces and the polishing limiter extends from the second surface to the first surface when the semiconductor wafer has the thickness t.sub.2. The polishing limiter has a greater resistance to polishing than that of the semiconductor wafer such that the polishing limiter prevents the polishing surface and the second surface portion from further moving axially toward each other when the polishing limiter extends from the second surface to the first surface to prevent the wafer from being reduced in thickness beyond the thickness t.sub.2.

Abstract translation: 本发明的半导体晶片抛光机用于抛光至少一个半导体晶片以使晶片的第一面平坦化并将晶片的厚度从初始厚度t1减小到预定的最终厚度t2。 抛光机包括包括抛光表面部分的第一表面，包括第二表面部分的第二表面和用于将半导体晶片保持在抛光表面部分和第二表面部分之间的晶片载体。 在第一和第二表面之间至少有一个抛光限制器用于限制晶片厚度的减小。 晶片载体和抛光限制器一体形成，使得抛光限制器和晶片载体构成单个整体。 抛光限制器具有适于摩擦第一和第二表面中的一个的至少一个摩擦表面，并且其尺寸和构造使得当半导体晶片具有厚度t1时，摩擦表面与第一和第二表面中的一个轴向间隔开 并且使得当半导体晶片具有厚度t2时，摩擦表面摩擦第一表面和第二表面之一，并且抛光限制器从第二表面延伸到第一表面。 抛光限制器具有比半导体晶片更大的抛光阻力，使得当抛光限制器从第二表面延伸到第一表面时，抛光限制器防止抛光表面和第二表面部分进一步朝向彼此轴向移动， 防止晶片厚度减小超过厚度t2。

公开(公告)号：US5787595A

公开(公告)日：1998-08-04

申请号：US689432

申请日：1996-08-09

Applicant: Ankur H. Desai ,  Troy W. Adcock ,  Michael S. Wisnieski ,  Harold E. Hall, Jr.

Inventor： Ankur H. Desai ,  Troy W. Adcock ,  Michael S. Wisnieski ,  Harold E. Hall, Jr.

IPC: B24B49/12 ,  B24B53/007 ,  B24B53/017 ,  G01B11/30 ,  H01L21/304 ,  G01B5/20

CPC classification number: B24B53/017 ,  B24B49/12 ,  G01B11/306

Abstract: Apparatus for determining the flatness of a generally circular polishing pad through direct measurement of the pad for use in maintaining the flatness of the pad and the flatness of surfaces of articles polished on the polishing pad of a polisher. The apparatus includes a measuring device, a frame mounting the measuring device being capable of measuring a distance between an upper surface of the polishing pad and a reference plane at plural locations along the polishing pad. The apparatus further includes a controller for controlling the measuring device. The controller is configured to indicate whether the flatness of the pad falls outside a predetermined specification.

Abstract translation: 用于通过直接测量焊盘来确定普通圆形抛光垫的平面度的装置，用于保持焊盘的平整度和抛光在抛光机抛光垫上的物品的表面的平整度。 该装置包括测量装置，安装测量装置的框架，其能够测量抛光垫的上表面与沿着抛光垫的多个位置处的参考平面之间的距离。 该装置还包括用于控制测量装置的控制器。 控制器被配置为指示垫的平坦度是否落在预定规格之外。