Metal-doped single-walled carbon nanotubes and production thereof
    1.
    发明授权
    Metal-doped single-walled carbon nanotubes and production thereof 失效
    金属掺杂单壁碳纳米管及其制备

    公开(公告)号:US07160530B2

    公开(公告)日:2007-01-09

    申请号:US10416218

    申请日:2002-04-04

    IPC分类号: D01F9/12

    摘要: Metal-doped single-walled carbon nanotubes and production thereof. The metal-doped single-walled carbon nanotubes may be produced according to one embodiment of the invention by combining single-walled carbon nanotube precursor material and metal in a solution, and mixing the solution to incorporate at least a portion of the metal with the single-walled carbon nanotube precursor material. Other embodiments may comprise sputter deposition, evaporation, and other mixing techniques.

    摘要翻译: 金属掺杂单壁碳纳米管及其制备。 金属掺杂的单壁碳纳米管可以根据本发明的一个实施方案通过将单壁碳纳米管前体材料和金属在溶液中组合来制备,并将该溶液混合以将至少一部分金属与单一的 壁碳纳米管前体材料。 其他实施方案可以包括溅射沉积,蒸发和其它混合技术。

    CONTINUOUS GROWTH OF SINGLE-WALL CARBON NANOTUBES USING CHEMICAL VAPOR DEPOSITION
    2.
    发明申请
    CONTINUOUS GROWTH OF SINGLE-WALL CARBON NANOTUBES USING CHEMICAL VAPOR DEPOSITION 有权
    使用化学蒸气沉积的单壁碳纳米管的连续生长

    公开(公告)号:US20080206463A1

    公开(公告)日:2008-08-28

    申请号:US10700386

    申请日:2003-11-03

    IPC分类号: C23C16/00

    摘要: The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

    摘要翻译: 本发明涉及用于连续生长碳单壁纳米管的化学气相沉积工艺,其中含碳气体组合物与多孔膜接触并在催化剂存在下分解以生长单壁碳纳米管材料。 在多孔膜之间存在压差,使得膜的一侧上的压力小于膜的另一侧上的压力。 单壁碳纳米管生长可主要发生在膜的低压侧上,或者在本发明的不同实施方案中可主要发生在催化剂和膜之间。 本发明还涉及一种与碳气相沉积工艺一起使用的装置。

    Continuous growth of single-wall carbon nanotubes using chemical vapor deposition
    3.
    发明授权
    Continuous growth of single-wall carbon nanotubes using chemical vapor deposition 有权
    使用化学气相沉积法连续生长单壁碳纳米管

    公开(公告)号:US08840724B2

    公开(公告)日:2014-09-23

    申请号:US12236144

    申请日:2008-09-23

    摘要: The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

    摘要翻译: 本发明涉及用于连续生长碳单壁纳米管的化学气相沉积工艺,其中含碳气体组合物与多孔膜接触并在催化剂存在下分解以生长单壁碳纳米管材料。 在多孔膜之间存在压差,使得膜的一侧上的压力小于膜的另一侧上的压力。 单壁碳纳米管生长可主要发生在膜的低压侧上,或者在本发明的不同实施方案中可主要发生在催化剂和膜之间。 本发明还涉及一种与碳气相沉积工艺一起使用的装置。

    Continuous Growth Of Single-Wall Carbon Nanotubes Using Chemical Vapor Deposition
    4.
    发明申请
    Continuous Growth Of Single-Wall Carbon Nanotubes Using Chemical Vapor Deposition 有权
    使用化学气相沉积的单壁碳纳米管的连续生长

    公开(公告)号:US20090013931A1

    公开(公告)日:2009-01-15

    申请号:US12236144

    申请日:2008-09-23

    IPC分类号: C23C16/00 B32B3/26

    摘要: The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

    摘要翻译: 本发明涉及用于连续生长碳单壁纳米管的化学气相沉积工艺,其中含碳气体组合物与多孔膜接触并在催化剂存在下分解以生长单壁碳纳米管材料。 在多孔膜之间存在压差,使得膜的一侧上的压力小于膜的另一侧上的压力。 单壁碳纳米管生长可主要发生在膜的低压侧上,或者在本发明的不同实施方案中可主要发生在催化剂和膜之间。 本发明还涉及一种与碳气相沉积工艺一起使用的装置。

    Carbon nanotube heat-exchange systems
    6.
    发明授权
    Carbon nanotube heat-exchange systems 有权
    碳纳米管热交换系统

    公开(公告)号:US07448441B2

    公开(公告)日:2008-11-11

    申请号:US10492483

    申请日:2002-09-17

    IPC分类号: F28F1/20

    摘要: A carbon nanotube heat-exchange system (10) and method for producing the same. One embodiment of the carbon nanotube heat-exchange system (10) comprises a microchannel structure (24) having an inlet end (30) and an outlet end (32), the inlet end (30) providing a cooling fluid into the microchannel structure (24) and the outlet end (32) discharging the cooling fluid from the microchannel structure (24). At least one flow path (28) is defined in the microchannel structure (24), fluidically connecting the inlet end (30) to the outlet end (32) of the microchannel structure (24). A carbon nanotube structure (26) is provided in thermal contact with the microchannel structure (24), the carbon nanotube structure (26) receiving heat from the cooling fluid in the microchannel structure (24) and dissipating the heat into an external medium (19).

    摘要翻译: 碳纳米管热交换系统(10)及其制造方法。 碳纳米管热交换系统(10)的一个实施例包括具有入口端(30)和出口端(32)的微通道结构(24),入口端(30)将冷却流体提供到微通道结构 24)和出口端(32)从微通道结构(24)排出冷却流体。 至少一个流路(28)限定在微通道结构(24)中,将入口端(30)流体连接到微通道结构(24)的出口端(32)。 提供与微通道结构(24)热接触的碳纳米管结构(26),所述碳纳米管结构(26)从微通道结构(24)中的冷却流体接收热量并将热量散发到外部介质(19)中 )。