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1.发明授权公开(公告)号：US06464568B2
公开(公告)日：2002-10-15
申请号：US09729609
申请日：2000-12-04
IPC分类号： H01L21302
CPC分类号： B08B3/08 , C11D7/265 , C11D11/0029 , H01L21/02074 , Y10S134/902
摘要： Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.
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2.发明授权公开(公告)号：US06443814B1
公开(公告)日：2002-09-03
申请号：US09962428
申请日：2001-09-24
IPC分类号： H01L21302
CPC分类号： B08B3/08 , C11D7/265 , C11D11/0029 , H01L21/02074 , Y10S134/902
摘要： Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.
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公开(公告)号：US06740591B1
公开(公告)日：2004-05-25
申请号：US09715282
申请日：2000-11-16
IPC分类号： H01L21302
CPC分类号： C09G1/02 , C23F3/00 , H01L21/7684
摘要： A copper polish slurry, for chemical mechanical polishing of copper and copper diffusion barriers may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an abrasive, such as for example colloidal silica. Alternative copper polish slurries, in accordance with the present invention, may be formed by further combining an oxidizer, such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole. Advantageous properties of slurries in accordance with the present invention include the enhancement of Cu removal rates to >3000 angstroms per minute. This high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion as compared to prior art copper polish slurries. Local pH stability provides for reduced within-wafer non-uniformity and reduced corrosion defects. Furthermore, copper diffusion barriers such as tantalum or tantalum nitride may also be polished with such slurries wherein the oxidizer is not included.
摘要翻译： 用于化学机械抛光铜和铜扩散阻挡层的铜抛光浆可以通过将螯合的有机酸缓冲体系如柠檬酸和柠檬酸钾组合而形成; 和研磨剂，例如胶体二氧化硅。 可以通过进一步组合氧化剂如过氧化氢和/或腐蚀抑制剂如苯并三唑来形成根据本发明的替代性铜抛光浆料。 根据本发明的浆料的有利特性包括将Cu去除率提高到每分钟3000埃。 与现有技术的铜抛光浆相比，实现了高抛光速率，同时保持局部pH稳定性并显着降低全局和局部腐蚀。 局部pH稳定性提供减少的晶片内不均匀性和减少的腐蚀缺陷。 此外，也可以使用不包括氧化剂的这种浆料来抛光诸如钽或氮化钽的铜扩散阻挡层。
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4.发明授权Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing 有权化学机械抛光过程中氧化铜的清洗方法和化学公开(公告)号：US06719614B2
公开(公告)日：2004-04-13
申请号：US10044378
申请日：2002-01-09
IPC分类号： B24B100
CPC分类号： B08B3/08 , C11D7/265 , C11D11/0029 , H01L21/02074 , Y10S134/902
摘要： Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.
摘要翻译： 描述了集成电路上铜层的化学机械抛光（CMP）的方法以及各种前抛光和后抛光溶液的化学组成。 在一个实施方案中，在铜的CMP之前进行具有络合的有机酸缓冲体系的预抛光清洗操作。 在替代实施例中，在清洁操作之后和CMP之前执行冲洗操作。 在另外的替代方案中，进行具有螯合剂的后抛光清洁操作。 在另外的替代方案中，预擦洗清洁剂的pH在预擦洗清洁操作期间倾斜以匹配在清洁操作之后使用的抛光浆料的pH，以将多余的铜层除去以除去 抛光
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公开(公告)号：US06752844B2
公开(公告)日：2004-06-22
申请号：US09280268
申请日：1999-03-29
IPC分类号： C09C168
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/00 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.
摘要翻译： 本发明提供了一种化学机械抛光浆料，其包含液体，铈离子作为氧化剂，研磨剂和pH增加物质。 铈离子在液体中的量等于在液体中包含至少0.02摩尔硝酸铈铵。 磨料也包括在液体中。 液体，铈离子和研磨剂共同具有第一pH值。 pH增加物质将第一个pH值提高到高于1.5的第二个pH值。
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6.发明授权Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide 失效化学机械抛光铝和钛铝化物的浆料和方法
公开(公告)号：US5700383A
公开(公告)日：1997-12-23
申请号：US577243
申请日：1995-12-21
IPC分类号： C09G1/02 , C23F3/00 , H01L21/321 , C23F1/44
CPC分类号： C23F3/00 , C09G1/02 , H01L21/3212
摘要： Slurries and methods for the chemical mechanical polishing of thin films used in integrated circuit manufacturing are described. A first slurry comprises an oxidant, such as water, a halogen, such as fluorine, an abrasive, such as silica, and a chelating agent, such as citric acid, and has a pH between four and nine. The first slurry is ideal for the chemical mechanical polish of an aluminum film. Another slurry comprises an abrasive, such as silica, and an acid, such as citric acid, and has a pH of approximately three. The second slurry is ideal for the chemical mechanical polish of titanium aluminide and is compatible with the first slurry.
摘要翻译： 描述了用于集成电路制造中使用的薄膜的化学机械抛光的浆料和方法。 第一浆料包括氧化剂，例如水，卤素如氟，研磨剂如二氧化硅，以及螯合剂如柠檬酸，并且pH在4至9之间。 第一种浆料是铝膜化学机械抛光的理想选择。 另一种浆料包括研磨剂，例如二氧化硅，和酸，如柠檬酸，并且具有约3的pH。 第二种浆料是钛化铝化学机械抛光的理想选择，与第一种浆料相容。
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公开(公告)号：US07087188B2
公开(公告)日：2006-08-08
申请号：US10360254
申请日：2003-02-05
IPC分类号： C09K13/00
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.
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公开(公告)号：US06881674B2
公开(公告)日：2005-04-19
申请号：US09473391
申请日：1999-12-28
IPC分类号： C09G1/02 , H01L21/321 , H01L21/768 , H01L21/302
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.
摘要翻译： 一种用于抛光具有第一硬度的第一材料的浆料，其中所述第一材料覆盖在具有第二硬度的第二材料上，并且所述第二硬度大于所述第一硬度，所述浆料包括硬度大于所述硬度的磨料 的第一材料，但是小于第二材料的材料。 在本发明的一个具体实施方案中，铜覆盖铜扩散阻挡层的铜用具有比铜更硬但比铜扩散阻挡层硬的磨料的浆料抛光。 铁氧化物，钛酸锶，磷灰石，二磷酸钙，铁，黄铜，萤石，水合氧化铁和砷灰石是比铜更硬的材料的实例，但是比通常用作集成电路中的铜扩散阻挡层的材料硬。
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公开(公告)号：US06825117B2
公开(公告)日：2004-11-30
申请号：US09461158
申请日：1999-12-14
申请人： Anne E. Miller , A. Daniel Feller , Kenneth Cadien
发明人： Anne E. Miller , A. Daniel Feller , Kenneth Cadien
IPC分类号： H01L21302
CPC分类号： H01L21/3212 , C09K3/1463 , H01L21/7684
摘要： A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a SiO2 abrasive, a (NH4)2S2O8 oxidizer, a benzotriazole corrosion inhibitor, and a K3PO4/K2HPO4 buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S2O8−2 or Fe(CN)6−3 as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.
摘要翻译： 用于铜抛光的浆料的pH为7.5至12.在本发明的一个具体实施方案中，用于抛光铜的浆料的pH为8至11.5，并且包括SiO 2研磨剂，（NH 4）2 S 2 O 8氧化剂，苯并三唑 缓蚀剂和K3PO4 / K2HPO4缓冲液。 根据本发明的铜抛光浆料以大于约7.5的高pH操作。 在该范围内，由于形成坚固的保护层，浆料具有低静态蚀刻。 该浆液可另外具有作为氧化剂的S2O8或Fe（CN）6-3，因此能够提供每分钟7000至10,000埃的高抛光速率，这在抛光过程中不会显着降低。 这种本发明的浆料提供了广泛的CMP工艺窗口，使得浆料和工艺参数可以被优化以在图案化的晶片上产生低的凹陷，侵蚀和凹陷。
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公开(公告)号：US06909193B2
公开(公告)日：2005-06-21
申请号：US10917729
申请日：2004-08-12
申请人： Anne E. Miller , A. Daniel Feller , Kenneth Cadien
发明人： Anne E. Miller , A. Daniel Feller , Kenneth Cadien
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , H01L21/768 , H01L23/48
CPC分类号： H01L21/3212 , C09K3/1463 , H01L21/7684
摘要： A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a siO2 abrasive, a (NH4)2S2O8 oxidizer, a benzotriazole corrosion inhibitor, and a K3PO4/K2HPO4 buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S2O8−2 or Fe(CN)6 −3 as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.
摘要翻译： 用于铜抛光的浆料具有7.5至12的pH。在本发明的一个具体实施方案中，用于抛光铜的浆料的pH值在8和11.5之间，并且包括SiO 2研磨剂， （NH 4）2 S 2 O 2氧化剂，苯并三唑缓蚀剂和K 3 CO 3， 3 PO 4 / 2H 2 HPO 4缓冲液。 根据本发明的铜抛光浆料以大于约7.5的高pH操作。 在该范围内，由于形成坚固的保护层，浆料具有低静态蚀刻。 该浆料可以另外具有S 2 O 8 O 2以上或Fe（CN）6 - 3 作为氧化剂，因此可以提供每分钟7000至10,000埃的高抛光速率，其在抛光期间不显着降低。 这种本发明的浆料提供了广泛的CMP工艺窗口，使得浆料和工艺参数可以被优化以在图案化的晶片上产生低的凹陷，侵蚀和凹陷。
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