公开(公告)号：US08324613B2

公开(公告)日：2012-12-04

申请号：US12092167

申请日：2006-10-23

申请人： Ansgar Werner ,  Jan Blochwitz-Nimoth ,  Tobias Canzler

发明人： Ansgar Werner ,  Jan Blochwitz-Nimoth ,  Tobias Canzler

IPC分类号： H01L35/24

CPC分类号： H01L51/5052 ,  H01L51/001

摘要： The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.

摘要翻译： 本发明涉及一种在电子器件中特别是在有机发光器件中制造层结构的方法，所述方法包括以下步骤：将所述层结构制成复合层结构，所述层结构具有通过第一 材料和第二材料，其中所述复合层结构分别作为由所述第一材料和所述第二材料制成的至少三个非混合子层的叠层提供，其中在所述至少三个非混合的堆叠内 每个第一材料子层的子层之后是相邻的第二材料子层，并且每个第二材料子层之后是相邻的第一材料子层，并且其中选择第一材料和第二材料形成 用于电掺杂的主体 - 掺杂剂材料系统。 本发明还涉及一种电子设备。

公开(公告)号：US20090179189A1

公开(公告)日：2009-07-16

申请号：US12092167

申请日：2006-10-23

申请人： Ansgar Werner ,  Jan Blochwitz-Nimoth ,  Tobias Canzler

发明人： Ansgar Werner ,  Jan Blochwitz-Nimoth ,  Tobias Canzler

IPC分类号： H01L51/10 ,  B05D5/06 ,  B05D5/12 ,  H01L21/04

CPC分类号： H01L51/5052 ,  H01L51/001

摘要： The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.

摘要翻译： 本发明涉及一种在电子器件中特别是在有机发光器件中制造层结构的方法，所述方法包括以下步骤：将所述层结构制成复合层结构，所述层结构具有通过第一 材料和第二材料，其中所述复合层结构分别作为由所述第一材料和所述第二材料制成的至少三个非混合子层的叠层提供，其中在所述至少三个非混合的堆叠内 每个第一材料子层的子层之后是相邻的第二材料子层，并且每个第二材料子层之后是相邻的第一材料子层，并且其中选择第一材料和第二材料形成 用于电掺杂的主体 - 掺杂剂材料系统。 本发明还涉及一种电子设备。

公开(公告)号：US20140203254A1

公开(公告)日：2014-07-24

申请号：US14127142

申请日：2012-06-20

申请人： Sascha Dorok ,  Jan Blochwitz-Nimoth ,  Tobias Canzler ,  Hagen Klauk ,  Frederik Ante

发明人： Sascha Dorok ,  Jan Blochwitz-Nimoth ,  Tobias Canzler ,  Hagen Klauk ,  Frederik Ante

IPC分类号： H01L51/05

CPC分类号： H01L51/0512 ,  H01L51/002 ,  H01L51/0059 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0566

摘要： The invention relates to an organic electron component having a first electrode, a second electrode, a channel layer comprising an organic semiconducting material and a dopant material.

摘要翻译： 本发明涉及具有第一电极，第二电极，包含有机半导体材料和掺杂剂材料的沟道层的有机电子部件。

公开(公告)号：US20100065833A1

公开(公告)日：2010-03-18

申请号：US12534402

申请日：2009-08-03

申请人： Qiang Huang ,  Tobias Canzler ,  Ulrich Denker ,  Ansgar Werner ,  Karl Leo ,  Kentaro Harada

发明人： Qiang Huang ,  Tobias Canzler ,  Ulrich Denker ,  Ansgar Werner ,  Karl Leo ,  Kentaro Harada

IPC分类号： H01L51/10

CPC分类号： H01L51/0562 ,  H01L27/283 ,  H01L51/002

摘要： The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.

摘要翻译： 本发明涉及有机场效应晶体管，特别涉及一种有机薄膜场效应晶体管，其包括栅电极，漏电极和源电极，与栅电极接触形成的电介质层，有源层 由与漏电极和源电极接触并被电气未掺杂的有机材料制成的掺杂剂材料层，其包含作为有源层的有机材料的电掺杂剂的掺杂剂材料和边界 表面区域，其中在有源层和掺杂剂材料层之间形成平面接触，其中掺杂剂材料层中类似的电荷载流子，即电子或空穴的迁移率不大于活性层的一半。

公开(公告)号：US08071976B2

公开(公告)日：2011-12-06

申请号：US12534402

申请日：2009-08-03

申请人： Qiang Huang ,  Tobias Canzler ,  Ulrich Denker ,  Ansgar Werner ,  Karl Leo ,  Kentaro Harada

发明人： Qiang Huang ,  Tobias Canzler ,  Ulrich Denker ,  Ansgar Werner ,  Karl Leo ,  Kentaro Harada

IPC分类号： H01L51/00

CPC分类号： H01L51/0562 ,  H01L27/283 ,  H01L51/002

摘要： The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.

摘要翻译： 本发明涉及有机场效应晶体管，特别涉及一种有机薄膜场效应晶体管，其包括栅电极，漏电极和源电极，与栅电极接触形成的电介质层，有源层 由与漏电极和源电极接触并被电气未掺杂的有机材料制成的掺杂剂材料层，其包含作为有源层的有机材料的电掺杂剂的掺杂剂材料和边界 表面区域，其中在有源层和掺杂剂材料层之间形成平面接触，其中掺杂剂材料层中类似的电荷载流子，即电子或空穴的迁移率不大于活性层的一半。

公开(公告)号：US20130210192A1

公开(公告)日：2013-08-15

申请号：US13811156

申请日：2011-07-21

申请人： Sascha Dorok ,  Rudolf Lessmann ,  Tobias Canzler ,  Qiang Huang ,  Christiane Koehn

发明人： Sascha Dorok ,  Rudolf Lessmann ,  Tobias Canzler ,  Qiang Huang ,  Christiane Koehn

IPC分类号： H01L51/05

CPC分类号： H01L51/05 ,  H01L51/002 ,  H01L51/0562 ,  H01L51/105

摘要： The invention concerns a semiconductor component with a layered arrangement with an electrode, an organic semiconductor layer, an injection layer, and an additive layer, which consists of an additive, which on contact with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer, wherein in the injection layer a layered region is formed with a first doping affinity of the molecular doping material with respect to the organic material and a further layered region is formed with a second, in comparison to the first doping affinity smaller, doping affinity of the molecular doping material with respect to the organic material. Furthermore the invention concerns a method for the manufacture of a semiconductor component and also the application of a semiconductor component.

摘要翻译： 本发明涉及具有电极，有机半导体层，注入层和添加剂层的分层布置的半导体部件，其由添加剂组成，该添加剂在与分子掺杂材料接触时改变其相对于 有机半导体层的有机材料，其中在注入层中，相对于有机材料，以分子掺杂材料的第一掺杂亲和力形成层状区域，并且与第一 掺杂亲和力较小，分子掺杂材料相对于有机材料的掺杂亲和力。 此外，本发明涉及制造半导体部件的方法以及半导体部件的应用。

公开(公告)号：US08212241B2

公开(公告)日：2012-07-03

申请号：US12534394

申请日：2009-08-03

申请人： Ulrich Denker ,  Tobias Canzler ,  Qiang Huang

发明人： Ulrich Denker ,  Tobias Canzler ,  Qiang Huang

IPC分类号： H01L51/10

CPC分类号： H01L51/0529 ,  H01L51/0562

摘要： The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.

摘要翻译： 本发明涉及一种具有栅电极，漏电极和源电极的有机场效应晶体管，特别是有机薄层场效应晶体管，有源材料的有源层在操作期间被配置为形成 电路通道，将有源层与栅电极电隔离的介质层，掺杂剂材料层，其分子由两个或多个原子组成的分子掺杂剂材料组成，掺杂剂材料是用于有机材料的电掺杂剂 所述有源层，并且其中所述掺杂剂材料层形成在所述有源层和所述电介质层之间的边界表面区域中，或者形成为与所述边界表面区域相邻。

公开(公告)号：US20120025171A1

公开(公告)日：2012-02-02

申请号：US12519912

申请日：2007-12-21

申请人： Tobias Canzler ,  Olaf Zeika ,  Philipp Wellmann

发明人： Tobias Canzler ,  Olaf Zeika ,  Philipp Wellmann

IPC分类号： H01L51/52 ,  H01L51/54

CPC分类号： B82Y10/00 ,  H01L51/002 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0086 ,  H01L51/5052 ,  H01L51/5212 ,  H01L51/5228

摘要： An electronic component, having an anode, a cathode and at least one organic layer arrangement, arranged between the anode and cathode and is in electrical contact with the anode and cathode and has at least one of the following: a zone which generates electrical charges upon application of an electric potential to the anode and cathode and has an np-junction, which is formed with a layer of a p-type organic semiconductor material and an n-doped layer of an n-type organic semiconductor material, which is in contact with a conductive layer of the anode, and a zone which generates further electrical charges upon application of the electric potential to the anode and cathode and has a pn-junction, which is formed with a layer of an n-type organic semiconductor material and a p-doped layer of a p-type organic semiconductor material, which is in contact with a conductive layer of the cathode.

摘要翻译： 一种具有阳极，阴极和至少一个有机层布置的电子部件，其布置在阳极和阴极之间并且与阳极和阴极电接触并且具有以下至少一个：产生电荷的区域 向阳极和阴极施加电位并且具有np结，其形成有p型有机半导体材料层和n型有机半导体材料的n掺杂层，其接触 具有阳极的导电层，以及在向阳极和阴极施加电位时产生进一步的电荷并具有pn结的区域，其形成有n型有机半导体材料层和 p型有机半导体材料的p型掺杂层与阴极的导电层接触。

公开(公告)号：US09178173B2

公开(公告)日：2015-11-03

申请号：US13704135

申请日：2011-06-10

申请人： Jan Birnstock ,  Martin Vehse ,  Tobias Canzler ,  Senthilkumar Madasamy ,  Omrane Fadhel ,  Domagoj Pavicic ,  Carsten Rothe ,  Sven Murano

发明人： Jan Birnstock ,  Martin Vehse ,  Tobias Canzler ,  Senthilkumar Madasamy ,  Omrane Fadhel ,  Domagoj Pavicic ,  Carsten Rothe ,  Sven Murano

IPC分类号： H01L51/50 ,  H01L51/00 ,  H01L51/52 ,  H01L27/32

CPC分类号： H01L51/5048 ,  H01L27/3209 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0084 ,  H01L51/0085 ,  H01L51/009 ,  H01L51/5016 ,  H01L51/5036 ,  H01L51/5052 ,  H01L51/5268

摘要： The present invention relates to an organic light emitting device that includes a layered structure including a substrate, a bottom electrode and a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, the region between the bottom electrode and the top electrode defining an electronically active region, wherein the electronically active region includes a scattering layer having a thickness of less than 50 nm; and an organic light emitting device additionally having at least one light emitting layer in the electronically active region, and this device can also include a specific chemical compound outside of the electronically active region.

摘要翻译： 本发明涉及一种有机发光器件，其包括具有基板，底部电极和顶部电极的分层结构，其中底部电极比顶部电极更靠近基板，底部电极和顶部电极之间的区域 电极，其限定电子有源区，其中所述电子有源区包括厚度小于50nm的散射层; 以及另外在电子有源区域中具有至少一个发光层的有机发光器件，并且该器件还可以包括电子活性区域外的特定化合物。

公开(公告)号：US08764462B2

公开(公告)日：2014-07-01

申请号：US13811156

申请日：2011-07-21

申请人： Sascha Dorok ,  Rudolf Lessmann ,  Tobias Canzler ,  Qiang Huang ,  Christiane Koehn

发明人： Sascha Dorok ,  Rudolf Lessmann ,  Tobias Canzler ,  Qiang Huang ,  Christiane Koehn

IPC分类号： H01L51/40 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/05 ,  H01L51/002 ,  H01L51/0562 ,  H01L51/105

摘要： The invention concerns a semiconductor component with a layered arrangement with an electrode, an organic semiconductor layer, an injection layer, and an additive layer, which consists of an additive, which on contact with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer, wherein in the injection layer a layered region is formed with a first doping affinity of the molecular doping material with respect to the organic material and a further layered region is formed with a second, in comparison to the first doping affinity smaller, doping affinity of the molecular doping material with respect to the organic material. Furthermore the invention concerns a method for the manufacture of a semiconductor component and also the application of a semiconductor component.

摘要翻译： 本发明涉及具有电极，有机半导体层，注入层和添加剂层的分层布置的半导体部件，其由添加剂组成，该添加剂在与分子掺杂材料接触时改变其相对于 有机半导体层的有机材料，其中在注入层中，相对于有机材料，以分子掺杂材料的第一掺杂亲和力形成层状区域，并且与第一 掺杂亲和力较小，分子掺杂材料相对于有机材料的掺杂亲和力。 此外，本发明涉及制造半导体部件的方法以及半导体部件的应用。