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100 条记录 (耗时 0.03 秒)

    Semiconductor wafer susceptor
    1.
    发明授权
    Semiconductor wafer susceptor 失效
    半导体晶圆基座

    公开(公告)号：US07022192B2

    公开(公告)日：2006-04-04

    申请号：US10233483

    申请日：2002-09-04

    申请人： Anthony Dip ,  Takanori Saito ,  Raymond Joe

    发明人： Anthony Dip ,  Takanori Saito ,  Raymond Joe

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/67309 ,  Y10S206/832

    摘要： A semiconductor wafer susceptor for batch substrate processing. The susceptor includes a central region in a primary plane and a plurality of flat annular extensions extending below the central region in a secondary plane. The primary and secondary planes are parallel to each other. An edge of the substrate overhangs the central region allowing no contact of the susceptor with the substrate edge.

    摘要翻译： 用于批量衬底加工的半导体晶片基座。 基座包括主平面中的中心区域和在次平面内在中心区域下方延伸的多个平的环形延伸部。 主平面和次平面彼此平行。 衬底的边缘突出中心区域，允许基座与衬底边缘不接触。

    Heat treating device
    2.
    发明授权
    Heat treating device 有权
    热处理装置

    公开(公告)号：US07141765B2

    公开(公告)日：2006-11-28

    申请号：US10473248

    申请日：2002-03-20

    申请人： Toshiyuki Makiya ,  Takanori Saito ,  Karuki Eickmann ,  Sanjeev Kaushal ,  Anthony Dip ,  David L. O'meara

    发明人： Toshiyuki Makiya ,  Takanori Saito ,  Karuki Eickmann ,  Sanjeev Kaushal ,  Anthony Dip ,  David L. O'meara

    IPC分类号： H05B1/02 ,  A21B1/00

    CPC分类号： G01K7/04 ,  G01K1/20

    摘要： A antireflective film 50 is formed on a thermocouple 42 arranged in a processing vessel 1 of a heat treatment apparatus in order to improve the transient response characteristics of the thermocouple 42. In a typical embodiment, the thermocouple 42 is made by connecting a platinum wire 43A and a platinum-rhodium alloy wire 43B, and the antireflective film 50 is composed by stacking a silicon nitride layer 50C, silicon layer 50B and a silicon nitride layer 50A in that order.

    摘要翻译： 为了改善热电偶42的瞬态响应特性，在设置在热处理装置的处理容器1中的热电偶42上形成防反射膜50。 在一个典型的实施例中，热电偶42是通过连接铂线43A和铂 - 铑合金线43B制成的，并且抗反射膜50由叠氮化硅层50C，硅层50B和硅 氮化物层50A。

    Heat treatment apparatus and heat treatment method
    3.
    发明授权
    Heat treatment apparatus and heat treatment method 有权
    热处理设备及热处理方法

    公开(公告)号：US09324591B2

    公开(公告)日：2016-04-26

    申请号：US13438234

    申请日：2012-04-03

    申请人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

    发明人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

    IPC分类号： F27D21/00 ,  H01L21/67

    CPC分类号： H01L21/67109 ,  H01L21/67248

    摘要： A heat treatment apparatus including: a processing container for processing wafers held in a boat; heaters for heating the processing container; and a control section for controlling the heaters. Heater temperature sensors are provided between the heaters and the processing container, in-container temperature sensors are provided in the processing container, and movable temperature sensors are provided in the boat. The temperature sensors are connected to a temperature estimation section. The temperature estimation section selects two of the three types of temperature sensors, e.g. the movable temperature sensors and the in-container temperature sensors, and determines the temperature of a wafer according to the following formula: T=T1×(1−α)+T2×α, α>1, where T1 and T2 represent detection temperatures of the selected temperature sensors, and α represents a mixing ratio.

    摘要翻译： 一种热处理设备，包括：处理容器，用于处理保存在船上的晶片; 用于加热处理容器的加热器; 以及用于控制加热器的控制部。 加热器温度传感器设置在加热器和处理容器之间，容器内温度传感器设置在处理容器中，并且可移动的温度传感器设置在船上。 温度传感器连接到温度估计部。 温度估计部分选择三种类型的温度传感器中的两种，例如， 可移动温度传感器和容器内温度传感器，并根据以下公式确定晶片的温度：T = T1×（1-α）+ T2×α，α> 1，其中T1和T2表示检测温度 的选定温度传感器，α表示混合比。

    Pharmaceutical composition for treatment and/or prophylaxis of cancer
    5.
    发明授权
    Pharmaceutical composition for treatment and/or prophylaxis of cancer 有权
    用于治疗和/或预防癌症的药物组合物

    公开(公告)号：US09180188B2

    公开(公告)日：2015-11-10

    申请号：US14236795

    申请日：2012-08-03

    申请人： Shinichi Kobayashi ,  Fumiyoshi Okano ,  Yoshitaka Minamida ,  Takanori Saito

    发明人： Shinichi Kobayashi ,  Fumiyoshi Okano ,  Yoshitaka Minamida ,  Takanori Saito

    IPC分类号： C07K16/30 ,  A61K39/395 ,  A61K45/06 ,  C07K16/28 ,  A61K39/00

    CPC分类号： A61K39/39558 ,  A61K45/06 ,  A61K2039/505 ,  C07K16/28 ,  C07K2317/24 ,  C07K2317/56 ,  C07K2317/732 ,  A61K2300/00

    摘要： It is intended to identify a cancer antigenic protein specifically expressed on the surface of cancer cells and to provide an antibody targeting the antigenic protein and use of the antibody as a therapeutic and/or preventive agent for cancer. The present invention provides an antibody or a fragment thereof which has immunological reactivity with a CAPRIN-1 protein, the antibody comprising a heavy chain variable region comprising amino acid sequences of SEQ ID NOs: 5, 6, and 7 and a light chain variable region comprising amino acid sequences of SEQ ID NOs: 9, 10, and 11, and a pharmaceutical composition for treatment and/or prevention of cancer, comprising this antibody or fragment as an active ingredient.

    摘要翻译： 旨在鉴定在癌细胞表面上特异性表达的癌抗原蛋白，并提供靶向抗原蛋白的抗体和使用抗体作为癌症的治疗和/或预防剂。 本发明提供了与CAPRIN-1蛋白具有免疫反应性的抗体或其片段，所述抗体包含包含SEQ ID NO：5,6和7的氨基酸序列的重链可变区和轻链可变区 包含SEQ ID NO：9,10和11的氨基酸序列，和包含该抗体或片段作为活性成分的用于治疗和/或预防癌症的药物组合物。

    HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD
    7.
    发明申请
    HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD 有权
    热处理设备和热处理方法

    公开(公告)号：US20120258415A1

    公开(公告)日：2012-10-11

    申请号：US13438234

    申请日：2012-04-03

    申请人： Koji YOSHII ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

    发明人： Koji YOSHII ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

    IPC分类号： F27D21/00 ,  F27D3/00

    CPC分类号： H01L21/67109 ,  H01L21/67248

    摘要： A heat treatment apparatus including: a processing container for processing wafers held in a boat; heaters for heating the processing container; and a control section for controlling the heaters. Heater temperature sensors are provided between the heaters and the processing container, in-container temperature sensors are provided in the processing container, and movable temperature sensors are provided in the boat. The temperature sensors are connected to a temperature estimation section. The temperature estimation section selects two of the three types of temperature sensors, e.g. the movable temperature sensors and the in-container temperature sensors, and determines the temperature of a wafer according to the following formula: T=T1×(1−α)+T2×α, α>1, where T1 and T2 represent detection temperatures of the selected temperature sensors, and α represents a mixing ratio.

    摘要翻译： 一种热处理设备，包括：处理容器，用于处理保存在船上的晶片; 用于加热处理容器的加热器; 以及用于控制加热器的控制部。 加热器温度传感器设置在加热器和处理容器之间，容器内温度传感器设置在处理容器中，并且可移动的温度传感器设置在船上。 温度传感器连接到温度估计部。 温度估计部分选择三种类型的温度传感器中的两种，例如， 可移动温度传感器和容器内温度传感器，并根据以下公式确定晶片的温度：T = T1×（1-α）+ T2×α，α> 1，其中T1和T2表示检测温度 的选定温度传感器，α表示混合比。

    Heat Treatment Apparatus, Heater, and Method for Manufacturing the Heater
    9.
    发明申请
    Heat Treatment Apparatus, Heater, and Method for Manufacturing the Heater 有权
    热处理装置，加热器及加热器制造方法

    公开(公告)号：US20100224614A1

    公开(公告)日：2010-09-09

    申请号：US12223162

    申请日：2007-02-07

    申请人： Makoto Kobayashi ,  Kenichi Yamaga ,  Takanori Saito

    发明人： Makoto Kobayashi ,  Kenichi Yamaga ,  Takanori Saito

    IPC分类号： F27D11/00 ,  H05B3/02

    CPC分类号： H01L21/67109 ,  H01L21/425 ,  Y10T29/49083

    摘要： The present invention provides a heat treatment apparatus having a high degree of freedom of an outlet design and capable of adjusting the rate of a reduction in the temperature of each part of a heater without using an adjustment valve. The heat treatment apparatus having a simple flow path structure can be constructed with simplified sealing and a reduced cost.The heat treatment apparatus 1 includes a process chamber 2, a tubular heater 3, a heat exhaust system 25 and a cooling section 26. The process chamber 2 accommodates objects W to be placed in multiple stages and to be treated. A predetermined heat treatment is performed in the process chamber. The heater 3 surrounds an outer circumference of the process chamber 2 and heats the objects W to be treated. The heat exhaust system 25 is adapted to exhaust an atmosphere present in a space 24 existing between the heater 3 and the process chamber 2. The cooling section 26 is adapted to blow a cooling fluid into the space 24 to cool the atmosphere. The heater 3 includes a tubular heat insulator 17, a heat generating resistor 18 and an outer shell 20. The heat generating resistor 18 is provided on an inner circumference of the heat insulator 17. The outer shell 20 is provided on an outer circumference of the heat insulator 17. The cooling section 26 includes at least one annular flow path 28 and an outlet 29. The annular flow path 28 is arranged between the heat insulator 17 and the outer shell 20. The outlet 29 is provided in the heat insulator 17. The outlet 29 is arranged to ensure that the cooling fluid is blown out of the outlet 29 toward a vertical central axis of the heat insulator 17 or in a direction oblique to the direction toward vertical central axis of the heat insulator 17.

    摘要翻译： 本发明提供一种热处理装置，其具有出口设计的高自由度，并且能够调节加热器的每个部件的温度降低的速率而不使用调节阀。 具有简单的流路结构的热处理装置可以以简单的密封和降低的成本构成。 热处理设备1包括处理室2，管状加热器3，散热系统25和冷却部分26.处理室2容纳待放置的多个物体W并进行处理。 在处理室中进行预定的热处理。 加热器3围绕处理室2的外周并加热被处理物体W. 散热系统25适于排出存在于加热器3和处理室2之间的空间24中的气氛。冷却部分26适于将冷却流体吹入空间24以冷却大气。 加热器3包括管状隔热件17，发热电阻18和外壳20.发热电阻18设置在隔热材料17的内周上。外壳20设置在绝热体17的外周。 绝热体17.冷却部分26包括至少一个环形流动路径28和出口29.环形流路28设置在绝热体17和外壳20之间。出口29设置在绝热体17中。 出口29布置成确保冷却流体从出口29朝向隔热件17的垂直中心轴线或者沿着与隔热件17的垂直中心轴方向倾斜的方向吹出。