公开(公告)号：US20170243937A1

公开(公告)日：2017-08-24

申请号：US15509517

申请日：2015-09-17

申请人： Anvil Semiconductors Limited

发明人： Peter Ward ,  Neophytos Lophitis ,  Tanya Trajkovic ,  Florin Udrea

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L21/266 ,  H01L29/20 ,  H01L29/40 ,  H01L29/10 ,  H01L29/16

CPC分类号： H01L29/0619 ,  H01L21/266 ,  H01L27/11273 ,  H01L29/0649 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/36 ,  H01L29/402 ,  H01L29/47 ,  H01L29/475 ,  H01L29/66674 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/778 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7827 ,  H01L29/78642 ,  H01L29/8611 ,  H01L29/868 ,  H01L29/872

摘要： We disclose a high voltage semiconductor device comprising a semiconductor substrate of a second conductivity type; a semiconductor drift region of the second conductivity type disposed over the semiconductor substrate, the semiconductor substrate region having higher doping concentration than the drift region; a semiconductor region of a first conductivity type, opposite to the second conductivity type, formed on the surface of the device and within the semiconductor drift region, the semiconductor region having higher doping concentration than the drift region; and a lateral extension of the first conductivity type extending laterally from the semiconductor region into the drift region, the lateral extension being spaced from a surface of the device.

公开(公告)号：US10157979B2

公开(公告)日：2018-12-18

申请号：US15509517

申请日：2015-09-17

申请人： Anvil Semiconductors Limited

发明人： Peter Ward ,  Neophytos Lophitis ,  Tanya Trajkovic ,  Florin Udrea

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/786 ,  H01L29/861 ,  H01L29/872 ,  H01L29/10 ,  H01L29/16 ,  H01L29/20 ,  H01L29/40 ,  H01L21/266 ,  H01L27/112 ,  H01L29/267 ,  H01L29/36 ,  H01L29/08 ,  H01L29/47 ,  H01L29/739 ,  H01L29/778 ,  H01L29/868

摘要： We disclose a high voltage semiconductor device comprising a semiconductor substrate of a second conductivity type; a semiconductor drift region of the second conductivity type disposed over the semiconductor substrate, the semiconductor substrate region having higher doping concentration than the drift region; a semiconductor region of a first conductivity type, opposite to the second conductivity type, formed on the surface of the device and within the semiconductor drift region, the semiconductor region having higher doping concentration than the drift region; and a lateral extension of the first conductivity type extending laterally from the semiconductor region into the drift region, the lateral extension being spaced from a surface of the device.