公开(公告)号：US20170025361A1

公开(公告)日：2017-01-26

申请号：US14947353

申请日：2015-11-20

Applicant: Apple Inc.

Inventor： Meng Chi Lee ,  Shakti S. Chauhan ,  Flynn P. Carson ,  Jun Chung Hsu ,  Tha-An Lin

IPC: H01L23/552 ,  H01L21/56

CPC classification number: H01L23/552 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49816 ,  H01L24/97 ,  H01L2224/16227 ,  H01L2224/97 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2224/81

Abstract: A system in package (SiP) is disclosed that uses an EMI shield to inhibit EMI or other electrical interference on the components within the SiP. A metal shield may be formed over the SiP. The metal shield may be electrically coupled to a ground layer in a printed circuit board (PCB) to form the EMI shield around the SiP. The substrate of the SiP may include at least some metallization along vertical walls in the end portions of the substrate. The metallization may provide a large contact area for coupling the metal shield to a ground ring coupled to the ground layer in the PCB. The metallization along the vertical walls in the end portions of the substrate may be formed as through-metal vias in a common substrate before singulation to form the SiP.

Abstract translation: 公开了一种封装系统（SiP），其使用EMI屏蔽来抑制SiP内的元件上的EMI或其他电干扰。 可以在SiP上形成金属屏蔽。 金属屏蔽可以电耦合到印刷电路板（PCB）中的接地层，以在SiP周围形成EMI屏蔽。 SiP的衬底可以包括在衬底的端部中沿垂直壁的至少一些金属化。 金属化可以提供用于将金属屏蔽件耦合到耦合到PCB中的接地层的接地环的大的接触面积。 沿着衬底的端部的垂直壁的金属化可以在共形衬底之前形成为通孔金属孔，以形成SiP。

公开(公告)号：US20170179039A1

公开(公告)日：2017-06-22

申请号：US14976199

申请日：2015-12-21

Applicant: Apple Inc.

Inventor： Meng Chi Lee ,  Shakti S. Chauhan ,  Flynn P. Carson ,  Jun Chung Hsu ,  Tha-An Lin

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/522 ,  H01L21/48 ,  H01L23/528 ,  H01L23/31

CPC classification number: H01L23/552 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/81

Abstract: A system in package (SiP) is disclosed that uses an EMI shield to inhibit EMI or other electrical interference on the components within the SiP. A metal shield may be formed on an upper surface of an encapsulant encapsulating the SiP. The metal shield may be electrically coupled to a ground layer in a printed circuit board (PCB) to form the EMI shield around the SiP. The metal shield may be electrically coupled to the ground layer using one or more conductive structures located in the encapsulant. The conductive structures may be located on a perimeter of the components in the SiP. The conductive structures may provide a substantially vertical connection between the substrate and the shield on the upper surface of the encapsulant.

公开(公告)号：US10109593B2

公开(公告)日：2018-10-23

申请号：US14947353

申请日：2015-11-20

Applicant: Apple Inc.

Inventor： Meng Chi Lee ,  Shakti S. Chauhan ,  Flynn P. Carson ,  Jun Chung Hsu ,  Tha-An Lin

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L23/31

Abstract: A system in package (SiP) is disclosed that uses an EMI shield to inhibit EMI or other electrical interference on the components within the SiP. A metal shield may be formed over the SiP. The metal shield may be electrically coupled to a ground layer in a printed circuit board (PCB) to form the EMI shield around the SiP. The substrate of the SiP may include at least some metallization along vertical walls in the end portions of the substrate. The metallization may provide a large contact area for coupling the metal shield to a ground ring coupled to the ground layer in the PCB. The metallization along the vertical walls in the end portions of the substrate may be formed as through-metal vias in a common substrate before singulation to form the SiP.

公开(公告)号：US09721903B2

公开(公告)日：2017-08-01

申请号：US14976199

申请日：2015-12-21

Applicant: Apple Inc.

Inventor： Meng Chi Lee ,  Shakti S. Chauhan ,  Flynn P. Carson ,  Jun Chung Hsu ,  Tha-An Lin

IPC: H01L29/00 ,  H01L23/552 ,  H01L23/528 ,  H01L23/31 ,  H01L23/522 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/552 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/81

Abstract: A system in package (SiP) is disclosed that uses an EMI shield to inhibit EMI or other electrical interference on the components within the SiP. A metal shield may be formed on an upper surface of an encapsulant encapsulating the SiP. The metal shield may be electrically coupled to a ground layer in a printed circuit board (PCB) to form the EMI shield around the SiP. The metal shield may be electrically coupled to the ground layer using one or more conductive structures located in the encapsulant. The conductive structures may be located on a perimeter of the components in the SiP. The conductive structures may provide a substantially vertical connection between the substrate and the shield on the upper surface of the encapsulant.

公开(公告)号：US10522475B2

公开(公告)日：2019-12-31

申请号：US16142137

申请日：2018-09-26

Applicant: Apple Inc.

Inventor： Meng Chi Lee ,  Shakti S. Chauhan ,  Flynn P. Carson ,  Jun Chung Hsu ,  Tha-An Lin

IPC: H01L23/552 ,  H01L23/528 ,  H01L23/31 ,  H01L23/522 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00

Abstract: A system in package (SiP) is disclosed that uses an EMI shield to inhibit EMI or other electrical interference on the components within the SiP. A metal shield may be formed on an upper surface of an encapsulant encapsulating the SiP. The metal shield may be electrically coupled to a ground layer in a printed circuit board (PCB) to form the EMI shield around the SiP. The metal shield may be electrically coupled to the ground layer using one or more conductive structures located in the encapsulant. The conductive structures may be located on a perimeter of the components in the SiP. The conductive structures may provide a substantially vertical connection between the substrate and the shield on the upper surface of the encapsulant.

公开(公告)号：US20190027445A1

公开(公告)日：2019-01-24

申请号：US16142137

申请日：2018-09-26

Applicant: Apple Inc.

Inventor： Meng Chi Lee ,  Shakti S. Chauhan ,  Flynn P. Carson ,  Jun Chung Hsu ,  Tha-An Lin

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/552 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/81

Abstract: A system in package (SiP) is disclosed that uses an EMI shield to inhibit EMI or other electrical interference on the components within the SiP. A metal shield may be formed on an upper surface of an encapsulant encapsulating the SiP. The metal shield may be electrically coupled to a ground layer in a printed circuit board (PCB) to form the EMI shield around the SiP. The metal shield may be electrically coupled to the ground layer using one or more conductive structures located in the encapsulant. The conductive structures may be located on a perimeter of the components in the SiP. The conductive structures may provide a substantially vertical connection between the substrate and the shield on the upper surface of the encapsulant.

公开(公告)号：US10115677B2

公开(公告)日：2018-10-30

申请号：US15630346

申请日：2017-06-22

Applicant: Apple Inc.

Inventor： Meng Chi Lee ,  Shakti S. Chauhan ,  Flynn P. Carson ,  Jun Chung Hsu ,  Tha-An Lin

IPC: H01L29/00 ,  H01L23/552 ,  H01L23/528 ,  H01L23/31 ,  H01L23/522 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00

Abstract: A system in package (SiP) is disclosed that uses an EMI shield to inhibit EMI or other electrical interference on the components within the SiP. A metal shield may be formed on an upper surface of an encapsulant encapsulating the SiP. The metal shield may be electrically coupled to a ground layer in a printed circuit board (PCB) to form the EMI shield around the SiP. The metal shield may be electrically coupled to the ground layer using one or more conductive structures located in the encapsulant. The conductive structures may be located on a perimeter of the components in the SiP. The conductive structures may provide a substantially vertical connection between the substrate and the shield on the upper surface of the encapsulant.

公开(公告)号：US20170301631A1

公开(公告)日：2017-10-19

申请号：US15630346

申请日：2017-06-22

Applicant: Apple Inc.

Inventor： Meng Chi Lee ,  Shakti S. Chauhan ,  Flynn P. Carson ,  Jun Chung Hsu ,  Tha-An Lin

IPC: H01L23/552 ,  H01L23/522 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48 ,  H01L23/528

CPC classification number: H01L23/552 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/81

Abstract: A system in package (SiP) is disclosed that uses an EMI shield to inhibit EMI or other electrical interference on the components within the SiP. A metal shield may be formed on an upper surface of an encapsulant encapsulating the SiP. The metal shield may be electrically coupled to a ground layer in a printed circuit board (PCB) to form the EMI shield around the SiP. The metal shield may be electrically coupled to the ground layer using one or more conductive structures located in the encapsulant. The conductive structures may be located on a perimeter of the components in the SiP. The conductive structures may provide a substantially vertical connection between the substrate and the shield on the upper surface of the encapsulant.