公开(公告)号：US11125512B2

公开(公告)日：2021-09-21

申请号：US15472691

申请日：2017-03-29

Applicant: Applied Materials, Inc.

Inventor： Jianqi Wang ,  Joung Woo Lee ,  Gia Pham ,  Alex Gerrard ,  Robert C. McIntosh

IPC: F28F19/00 ,  H01L21/67 ,  C09K5/10 ,  F28F23/00

Abstract: Implementations described herein generally relate to substrate processing equipment and more particularly to methods and compositions for temperature control of substrate processing equipment. In one implementation, a method of cooling a processing chamber component is provided. The method comprises introducing an inert purge gas into a supply reservoir containing a coolant and flowing the treated coolant to a processing chamber component to cool the processing chamber component. The coolant initially comprises deionized water and a water-soluble base.

公开(公告)号：US20180337075A1

公开(公告)日：2018-11-22

申请号：US15982785

申请日：2018-05-17

Applicant: Applied Materials, Inc.

Inventor： Dongming IU ,  Kartik SHAH ,  Norman L. TAM ,  Matthew SPULLER ,  Jau-Jiun CHEN ,  Kong Lung Samuel CHAN ,  Elizabeth NEVILLE ,  Preetham RAO ,  Abhilash J. MAYUR ,  Gia Pham

IPC: H01L21/67 ,  C23C16/56 ,  C23C16/458 ,  C23C16/455

Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

公开(公告)号：US11978646B2

公开(公告)日：2024-05-07

申请号：US15982785

申请日：2018-05-17

Applicant: Applied Materials, Inc.

Inventor： Dongming Iu ,  Kartik Shah ,  Norman L. Tam ,  Matthew Spuller ,  Jau-Jiun Chen ,  Kong Lung Samuel Chan ,  Elizabeth Neville ,  Preetham Rao ,  Abhilash J. Mayur ,  Gia Pham

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/56 ,  H01L21/687

CPC classification number: H01L21/67103 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/56 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68792 ,  H01L21/67098

Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.