公开(公告)号：US20030203637A1

公开(公告)日：2003-10-30

申请号：US10137132

申请日：2002-04-30

申请人： Applied Materials, Inc.

发明人： Zhong Qiang Hua ,  Dong Qing Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Chiu Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

IPC分类号： H01L021/311

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.

摘要翻译： 一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。 在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。 氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。 在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

公开(公告)号：US20040224090A1

公开(公告)日：2004-11-11

申请号：US10435296

申请日：2003-05-09

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Bruno Geoffrion ,  Michael S. Cox ,  Lin Zhang ,  Bikram Kapoor ,  Anchuan Wang ,  Zhenjiang Cui

IPC分类号： H05H001/24 ,  B05D003/12 ,  C23C016/00

CPC分类号： C23C16/45502 ,  C23C16/45591 ,  C23C16/56

摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.

摘要翻译： 沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。 通过在衬底上变化的工艺来进行沉积和抛光。 不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。 在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。