利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.015 秒)

    Chamber clean method using remote and in situ plasma cleaning systems
    1.
    发明申请
    Chamber clean method using remote and in situ plasma cleaning systems 失效
    室内清洁方法使用远程和原位等离子体清洁系统

    公开(公告)号：US20040000321A1

    公开(公告)日：2004-01-01

    申请号：US10187817

    申请日：2002-07-01

    申请人： Applied Materials, Inc.

    发明人： Zhenjiang Cui ,  Michael S. Cox ,  Canfeng Lai ,  Paddy Krishnaraj

    IPC分类号： B08B005/00

    CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J2237/022 ,  Y10S438/905

    摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.

    摘要翻译： 一种用于从衬底处理室的一个或多个内表面去除不想要的沉积物的方法。 根据一个实施例，该方法包括在衬底处理室内的衬底上执行衬底处理操作，然后将衬底转移出衬底处理室; 将第一蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应性物质并将反应物质输送到基底处理室中以去除不需要的沉积物堆积的第一部分; 然后将第二蚀刻剂气体流入基板处理室，并从第二气体在基板处理室内形成等离子体，以便去除不需要的沉积物积聚的第二部分。

    Deposition process for high aspect ratio trenches
    2.
    发明申请
    Deposition process for high aspect ratio trenches 有权
    高宽比沟槽沉积工艺

    公开(公告)号：US20040115898A1

    公开(公告)日：2004-06-17

    申请号：US10319827

    申请日：2002-12-13

    申请人： Applied Materials, Inc.

    发明人： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham ,  Zhenjiang Cui

    IPC分类号： C23C016/40 ,  H01L021/4763 ,  H01L021/76

    CPC分类号： H01J37/32082 ,  C23C16/045 ,  H01J2237/3327 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/76229

    摘要： A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.

    摘要翻译： 一种在具有形成在两个相邻凸起特征之间的间隙的基底上沉积绝缘膜的方法。 该方法包括使用具有同时沉积和溅射部件的高密度等离子体工艺在衬底上和间隙中沉积绝缘膜的一部分，并使用原子层沉积在衬底上和间隙中沉积绝缘膜的另一部分 处理。 在一些实施例中，通过原子层沉积工艺沉积的膜的部分沉积在使用高密度等离子体CVD技术沉积的膜的部分上。 在其他实施例中，通过高密度等离子体CVD工艺沉积的膜的部分沉积在使用原子层沉积工艺沉积的膜的部分上。

    HDP-CVD uniformity control
    3.
    发明申请
    HDP-CVD uniformity control 失效
    HDP-CVD均匀性控制

    公开(公告)号：US20040224090A1

    公开(公告)日：2004-11-11

    申请号：US10435296

    申请日：2003-05-09

    申请人： Applied Materials, Inc.

    发明人： Padmanabhan Krishnaraj ,  Bruno Geoffrion ,  Michael S. Cox ,  Lin Zhang ,  Bikram Kapoor ,  Anchuan Wang ,  Zhenjiang Cui

    IPC分类号： H05H001/24 ,  B05D003/12 ,  C23C016/00

    CPC分类号： C23C16/45502 ,  C23C16/45591 ,  C23C16/56

    摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.

    摘要翻译： 沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。 通过在衬底上变化的工艺来进行沉积和抛光。 不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。 在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。

    Multistep cure technique for spin-on-glass films
    6.
    发明申请
    Multistep cure technique for spin-on-glass films 失效
    旋涂玻璃膜的多步法固化技术

    公开(公告)号：US20040224479A1

    公开(公告)日：2004-11-11

    申请号：US10430942

    申请日：2003-05-06

    申请人： Applied Materials, Inc.

    发明人： Zhenjiang Cui ,  Rick J. Roberts ,  Michael S. Cox ,  Jun Zhao ,  Khaled Elsheref ,  Alexandros T. Demos

    IPC分类号： H01L021/76

    CPC分类号： H01L21/76229 ,  H01L21/3105

    摘要： A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.

    摘要翻译： 一种填充蚀刻在衬底中的多个沟槽的方法。 在一个实施例中，该方法包括在衬底上沉积旋涂玻璃材料层并进入多个沟槽; 通过在第一温度下将自旋玻璃材料暴露于电子束辐射第一周期，随后将旋涂玻璃材料暴露于第二温度下的电子束第二周期来固化旋涂玻璃材料层 ，其中第二温度大于第一温度。 该方法的结论是通过使用化学气相沉积技术在固化的旋涂玻璃层上沉积二氧化硅玻璃层。