公开(公告)号：US20160372324A1

公开(公告)日：2016-12-22

申请号：US15184521

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Benjamin Schmiege ,  Xuesong Lu ,  Juno Yu-Ting Huang ,  Yu Lei ,  Yung-Hsin Lee ,  Srinivas Gandikota ,  Rajkumar Jakkaraju ,  Chikuang Charles Wang ,  Ghazal Saheli ,  Benjamin C. Wang ,  Xinliang Lu ,  Pingyan Lei

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.

Abstract translation: 公开了通过原子层沉积沉积氧化钛膜的方法。 氧化钛膜可以包括氮化钛盖，富氧氮化钛盖或混合氧化物氮化物层。 还描述了包括氧化钛间隔膜的自对准双重图案的方法。

公开(公告)号：US09881787B2

公开(公告)日：2018-01-30

申请号：US15184521

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Benjamin Schmiege ,  Xuesong Lu ,  Juno Yu-Ting Huang ,  Yu Lei ,  Yung-Hsin Lee ,  Srinivas Gandikota ,  Rajkumar Jakkaraju ,  Chikuang Charles Wang ,  Ghazal Saheli ,  Benjamin C. Wang ,  Xinliang Lu ,  Pingyan Lei

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.