公开(公告)号：US20210366722A1

公开(公告)日：2021-11-25

申请号：US16881145

申请日：2020-05-22

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Xuesong Lu ,  Tae Hong Ha ,  Xianmin Tang ,  Andrew Nguyen ,  Tza-Jing Gung ,  Philip A. Kraus ,  Chung Nang Liu ,  Hui Sun ,  Yufei Hu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/8234

Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

公开(公告)号：US10655223B2

公开(公告)日：2020-05-19

申请号：US16268194

申请日：2019-02-05

Applicant: Applied Materials, Inc.

Inventor： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Jang Seok Oh

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/507 ,  H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505

Abstract: Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

公开(公告)号：US10002745B2

公开(公告)日：2018-06-19

申请号：US15145750

申请日：2016-05-03

Applicant: Applied Materials, Inc.

Inventor： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Jang Seok Oh ,  Xinhai Han

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32862 ,  H01J2237/334 ,  H01J2237/335

Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.

公开(公告)号：US09881787B2

公开(公告)日：2018-01-30

申请号：US15184521

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Benjamin Schmiege ,  Xuesong Lu ,  Juno Yu-Ting Huang ,  Yu Lei ,  Yung-Hsin Lee ,  Srinivas Gandikota ,  Rajkumar Jakkaraju ,  Chikuang Charles Wang ,  Ghazal Saheli ,  Benjamin C. Wang ,  Xinliang Lu ,  Pingyan Lei

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.

公开(公告)号：US20220005713A1

公开(公告)日：2022-01-06

申请号：US16921741

申请日：2020-07-06

Applicant: Applied Materials, Inc.

Inventor： Xuesong Lu ,  Yu Lei ,  Anup Phatak ,  Hyman Lam ,  Chong Jiang ,  Malcolm Emil Delaney ,  Yufei Hu

IPC: H01L21/67 ,  G06N3/08 ,  H05B1/02

Abstract: A method includes receiving a plurality of sets of sensor data associated with a processing chamber of a substrate processing system. Each of the plurality of sets of sensor data comprises a corresponding sensor value of the processing chamber mapped to a corresponding spacing value of the processing chamber. The method further includes providing the plurality of sets of sensor data as input to a trained machine learning model. The method further includes obtaining, from the trained machine learning model, one or more outputs indicative of a health of the processing chamber. The method further includes causing, based on the one or more outputs, performance of one or more corrective actions associated with the processing chamber.

公开(公告)号：US10192763B2

公开(公告)日：2019-01-29

申请号：US14875673

申请日：2015-10-05

Applicant: Applied Materials, Inc.

Inventor： Xuesong Lu ,  Lin Zhang ,  Andy Le

IPC: H01L21/67 ,  C23C16/52 ,  G05B19/418 ,  H01J37/32 ,  C23C16/50

Abstract: Embodiments of the present disclosure provide methodology to match and calibrate processing chamber performance in a processing chamber. In one embodiment, a method for calibrating a processing chamber for semiconductor manufacturing process includes performing a first predetermined process in a processing chamber, collecting a first set of signals transmitted from a first group of sensors disposed in the processing chamber to a controller while performing the predetermined process, analyzing the collected first set of signals, comparing the collected first set of signals with database stored in the controller to check sensor responses from the first group of sensors, calibrating sensors based on the collected first set of signals when a mismatch sensor response is found, subsequently performing a first series of processes in the processing chamber, and collecting a second set of signals transmitted from the sensors to the controller while performing the series of processes.

公开(公告)号：US12068180B2

公开(公告)日：2024-08-20

申请号：US16247026

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Xuesong Lu ,  Lin Zhang ,  Joseph C. Werner ,  Jang Seok Oh ,  Balaji Pasupathy ,  Michael W. Johnson

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  G01K3/00 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67248 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  G01K3/005 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02 ,  H01L21/02312 ,  H01L21/67 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67253 ,  H01L21/68742 ,  H01J2237/24585 ,  H01J2237/3321

Abstract: Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.

公开(公告)号：US20220336223A1

公开(公告)日：2022-10-20

申请号：US17846155

申请日：2022-06-22

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Xuesong Lu ,  Tae Hong Ha ,  Xianmin Tang ,  Andrew Nguyen ,  Tza-Jing Gung ,  Philip A. Kraus ,  Chung Nang Liu ,  Hui Sun ,  Yufei Hu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/8234

Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

公开(公告)号：US10365216B2

公开(公告)日：2019-07-30

申请号：US15793458

申请日：2017-10-25

Applicant: Applied Materials, Inc.

Inventor： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Fa Ji ,  Jang Seok Oh ,  Patrick L. Smith ,  Shawyon Jafari ,  Ralph Peter Antonio

IPC: G01N21/53 ,  G01N1/22 ,  H01L21/67 ,  H01L21/677 ,  G01N15/02 ,  G01N15/00 ,  G01N15/06

Abstract: An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

公开(公告)号：US10208380B2

公开(公告)日：2019-02-19

申请号：US15334431

申请日：2016-10-26

Applicant: Applied Materials, Inc.

Inventor： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Jang Seok Oh

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505 ,  C23C16/44 ,  C23C16/507 ,  H01J37/32

Abstract: Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.