公开(公告)号：US20210398850A1

公开(公告)日：2021-12-23

申请号：US16908076

申请日：2020-06-22

申请人： Applied Materials, Inc.

发明人： Yi Xu ,  Yufei Hu ,  Kazuya Daito ,  Geraldine M. Vasquez ,  Da He ,  Jallepally Ravi ,  Yu Lei ,  Dien-Yeh Wu

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67

摘要： Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US20200335395A1

公开(公告)日：2020-10-22

申请号：US16917049

申请日：2020-06-30

申请人： Applied Materials, Inc.

发明人： Yi Xu ,  Yufei Hu ,  Yu Lei ,  Kazuya Daito ,  Da He ,  Jiajie Cen

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

摘要： Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

公开(公告)号：US11967525B2

公开(公告)日：2024-04-23

申请号：US17878599

申请日：2022-08-01

申请人： Applied Materials, Inc.

发明人： Yi Xu ,  Yufei Hu ,  Yu Lei ,  Kazuya Daito ,  Da He ,  Jiajie Cen

IPC分类号： H01L21/68 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76879 ,  H01L21/28562 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53257

摘要： Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

公开(公告)号：US11955381B2

公开(公告)日：2024-04-09

申请号：US16908076

申请日：2020-06-22

申请人： Applied Materials, Inc.

发明人： Yi Xu ,  Yufei Hu ,  Kazuya Daito ,  Geraldine M. Vasquez ,  Da He ,  Jallepally Ravi ,  Yu Lei ,  Dien-Yeh Wu

IPC分类号： H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/768

CPC分类号： H01L21/76883 ,  H01J37/32174 ,  H01L21/02049 ,  H01L21/02063 ,  H01L21/67028

摘要： Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US20220367264A1

公开(公告)日：2022-11-17

申请号：US17878599

申请日：2022-08-01

申请人： Applied Materials, Inc.

发明人： Yi Xu ,  Yufei Hu ,  Yu Lei ,  Kazuya Daito ,  Da He ,  Jiajie Cen

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

摘要： Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.