公开(公告)号：US20210398850A1

公开(公告)日：2021-12-23

申请号：US16908076

申请日：2020-06-22

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Kazuya Daito ,  Geraldine M. Vasquez ,  Da He ,  Jallepally Ravi ,  Yu Lei ,  Dien-Yeh Wu

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US11955381B2

公开(公告)日：2024-04-09

申请号：US16908076

申请日：2020-06-22

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Kazuya Daito ,  Geraldine M. Vasquez ,  Da He ,  Jallepally Ravi ,  Yu Lei ,  Dien-Yeh Wu

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/76883 ,  H01J37/32174 ,  H01L21/02049 ,  H01L21/02063 ,  H01L21/67028

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.