公开(公告)号：US11515200B2

公开(公告)日：2022-11-29

申请号：US17110826

申请日：2020-12-03

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  He Ren ,  Yu Lei ,  Shi You ,  Kazuya Daito

IPC: H01L21/768

Abstract: Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.

公开(公告)号：US20220005713A1

公开(公告)日：2022-01-06

申请号：US16921741

申请日：2020-07-06

Applicant: Applied Materials, Inc.

Inventor： Xuesong Lu ,  Yu Lei ,  Anup Phatak ,  Hyman Lam ,  Chong Jiang ,  Malcolm Emil Delaney ,  Yufei Hu

IPC: H01L21/67 ,  G06N3/08 ,  H05B1/02

Abstract: A method includes receiving a plurality of sets of sensor data associated with a processing chamber of a substrate processing system. Each of the plurality of sets of sensor data comprises a corresponding sensor value of the processing chamber mapped to a corresponding spacing value of the processing chamber. The method further includes providing the plurality of sets of sensor data as input to a trained machine learning model. The method further includes obtaining, from the trained machine learning model, one or more outputs indicative of a health of the processing chamber. The method further includes causing, based on the one or more outputs, performance of one or more corrective actions associated with the processing chamber.

公开(公告)号：US20240139900A1

公开(公告)日：2024-05-02

申请号：US18101025

申请日：2023-01-24

Applicant: Applied Materials, Inc.

Inventor： Jeonghoon Oh ,  Jianshe Tang ,  Steven M. Zuniga ,  Brian J. Brown ,  Andrew J. Nagengast ,  Derek R. Witty ,  Rushabhkumar Desai ,  Shih-Haur Shen ,  Haosheng Wu ,  Yufei Hu

IPC: B24B37/005 ,  B24B37/04

CPC classification number: B24B37/005 ,  B24B37/042

Abstract: A chemical mechanical polishing apparatus has a platen to support a polishing pad, a carrier head comprising a rigid housing and configured to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish the substrate, an in-situ carrier head monitoring system including a sensor positioned to interact with the housing and to detect vibrational motion of the housing and generate signals based on the detected vibrational motion, and a controller. The controller is configured to generate a value for a carrier head status parameter based on received signals from the in-situ carrier head monitoring system, and change a polishing parameter or generate an alert based on the carrier head status parameter.

公开(公告)号：US20210366722A1

公开(公告)日：2021-11-25

申请号：US16881145

申请日：2020-05-22

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Xuesong Lu ,  Tae Hong Ha ,  Xianmin Tang ,  Andrew Nguyen ,  Tza-Jing Gung ,  Philip A. Kraus ,  Chung Nang Liu ,  Hui Sun ,  Yufei Hu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/8234

Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

公开(公告)号：US11171046B2

公开(公告)日：2021-11-09

申请号：US16837365

申请日：2020-04-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Feng Chen ,  Yufei Hu ,  Wenjing Xu ,  Gang Shen ,  Zhiyuan Wu ,  Tae Hong Ha

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L23/522

Abstract: Methods and apparatus for forming an interconnect structure, the method including selectively depositing two or more capping layers atop a top surface of a via within a low-k dielectric layer, wherein the two or more capping layers include a first layer of ruthenium and a second layer of cobalt.

公开(公告)号：US20200335395A1

公开(公告)日：2020-10-22

申请号：US16917049

申请日：2020-06-30

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Yu Lei ,  Kazuya Daito ,  Da He ,  Jiajie Cen

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

公开(公告)号：US11967525B2

公开(公告)日：2024-04-23

申请号：US17878599

申请日：2022-08-01

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Yu Lei ,  Kazuya Daito ,  Da He ,  Jiajie Cen

IPC: H01L21/68 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/28562 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53257

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

公开(公告)号：US11955381B2

公开(公告)日：2024-04-09

申请号：US16908076

申请日：2020-06-22

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Kazuya Daito ,  Geraldine M. Vasquez ,  Da He ,  Jallepally Ravi ,  Yu Lei ,  Dien-Yeh Wu

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/76883 ,  H01J37/32174 ,  H01L21/02049 ,  H01L21/02063 ,  H01L21/67028

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US20220367264A1

公开(公告)日：2022-11-17

申请号：US17878599

申请日：2022-08-01

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Yu Lei ,  Kazuya Daito ,  Da He ,  Jiajie Cen

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

公开(公告)号：US11749543B2

公开(公告)日：2023-09-05

申请号：US16921741

申请日：2020-07-06

Applicant: Applied Materials, Inc.

Inventor： Xuesong Lu ,  Yu Lei ,  Anup Phatak ,  Hyman W. H. Lam ,  Chong Jiang ,  Malcolm Emil Delaney ,  Yufei Hu

IPC: H01L21/67 ,  H05B1/02 ,  G06N3/08

CPC classification number: H01L21/67253 ,  G06N3/08 ,  H05B1/0233

Abstract: A method includes receiving a plurality of sets of sensor data associated with a processing chamber of a substrate processing system. Each of the plurality of sets of sensor data comprises a corresponding sensor value of the processing chamber mapped to a corresponding spacing value of the processing chamber. The method further includes providing the plurality of sets of sensor data as input to a trained machine learning model. The method further includes obtaining, from the trained machine learning model, one or more outputs indicative of a health of the processing chamber. The method further includes causing, based on the one or more outputs, performance of one or more corrective actions associated with the processing chamber.