公开(公告)号：US20240247376A1

公开(公告)日：2024-07-25

申请号：US18416304

申请日：2024-01-18

Applicant: Applied Materials, Inc.

Inventor： Douglas LONG ,  Jallepally RAVI ,  Dien-yeh WU

IPC: C23C16/455 ,  C23C4/08 ,  C23C4/134 ,  C23C16/42 ,  C23C16/50 ,  C23C18/16 ,  C23C18/31 ,  C25D3/44 ,  C25D5/48 ,  H01L21/285 ,  H01L21/687

CPC classification number: C23C16/45565 ,  C23C4/08 ,  C23C4/134 ,  C23C16/42 ,  C23C16/50 ,  C23C18/1689 ,  C23C18/31 ,  C25D3/44 ,  C25D5/48 ,  H01L21/28518 ,  H01L21/68757

Abstract: A component of an apparatus for processing a substrate having a coating comprising fluorinated aluminum disposed on at least a portion of a surface of the component. A method of coating the component, a method of repairing a coating on a component, and a method of processing a substrate are also disclosed.

公开(公告)号：US20230377892A1

公开(公告)日：2023-11-23

申请号：US17748329

申请日：2022-05-19

Applicant: Applied Materials, Inc.

Inventor： Yiyang WAN ,  Weifeng YE ,  Shumao ZHANG ,  Gary HOW ,  Jiang LU ,  Lei ZHOU ,  Dien-yeh WU ,  Douglas LONG ,  Avgerinos V. GELATOS ,  Ying-Bing JIANG ,  Rongjun WANG ,  Xianmin TANG ,  Halbert CHONG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42 ,  C23C16/507

CPC classification number: H01L21/28518 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32357 ,  C23C16/42 ,  C23C16/507 ,  H01J37/32816 ,  H01J2237/332

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises forming a plasma reaction between titanium tetrachloride (TlCl4), hydrogen (H2), and argon (Ar) in a region between a lid heater and a showerhead of a process chamber or the showerhead and a substrate while providing RF power at a pulse frequency of about 5 kHz to about 100 kHz and at a duty cycle of about 10% to about 20% and flowing reaction products into the process chamber to selectively form a titanium material layer upon a silicon surface of the substrate.