公开(公告)号：US20240290655A1

公开(公告)日：2024-08-29

申请号：US18115561

申请日：2023-02-28

Applicant: Applied Materials, Inc.

Inventor： Zheng JU ,  Zhiyuan WU ,  Jiajie CEN ,  Feng Q. LIU ,  Feng CHEN

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76844 ,  H01L21/76846 ,  H01L21/76879 ,  H01L23/5226 ,  H01L21/76862 ,  H01L23/53238 ,  H01L23/53266

Abstract: A method of selectively filling a via with a simultaneous liner deposition in a semiconductor structure includes forming a passivation layer selectively on an exposed surface of a conductive layer within a via formed in a dielectric layer formed over the conductive layer, forming a barrier layer selectively on inner sidewalls of the via and a trench formed in the dielectric layer, selectively filling the via with a first conductive material at least partially and simultaneously depositing the first conductive material on the barrier layer on the inner sidewalls of the via and the trench, to form a liner on the inner sidewalls of the via and the trench, and filling the remaining of the via and the trench with a second conductive material.

公开(公告)号：US20240183028A1

公开(公告)日：2024-06-06

申请号：US18442234

申请日：2024-02-15

Applicant: Applied Materials, Inc.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C14/564 ,  H01J37/32082 ,  H01L21/02043 ,  H01L21/67017 ,  H01J2237/022

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20220084882A1

公开(公告)日：2022-03-17

申请号：US17022058

申请日：2020-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Lanlan ZHONG ,  Fuhong ZHANG ,  Gang SHEN ,  Feng CHEN ,  Rui LI ,  Xiangjin XIE ,  Tae Hong HA ,  Xianmin TANG

IPC: H01L21/768 ,  C23C16/455 ,  G11B5/31

Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

公开(公告)号：US20240186181A1

公开(公告)日：2024-06-06

申请号：US18074335

申请日：2022-12-02

Applicant: Applied Materials, Inc.

Inventor： Ge QU ,  Qihao ZHU ,  Zheng JU ,  Yang ZHOU ,  Jiajie CEN ,  Feng Q. LIU ,  Zhiyuan WU ,  Feng CHEN ,  Kevin KASHEFI ,  Xianmin TANG ,  Jeffrey W. ANTHIS ,  Mark Joseph SALY

IPC: H01L21/768 ,  H01L21/3205

CPC classification number: H01L21/76849 ,  H01L21/32051 ,  H01L21/76877

Abstract: Methods to deposit a metal cap for an interconnect are disclosed. In embodiments, a method comprises contacting the substrate with an alkyl halide and a ruthenium metal precursor to form a metal cap for an interconnect.

公开(公告)号：US20190148150A1

公开(公告)日：2019-05-16

申请号：US16172786

申请日：2018-10-27

Applicant: Applied Materials, Inc.

Inventor： Joung Joo LEE ,  Feng CHEN ,  Zhiyuan WU ,  Atashi BASU ,  Mehul B. NAIK ,  Yufei HU

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/528

Abstract: Methods for forming a capping protection structure on a metal line layer formed in an insulating material in an interconnection structure are provided. In one embodiment, a method for forming capping protection on a metal line in an interconnection structure for semiconductor devices includes selectively forming a metal silicide layer on a metal line bounded by a dielectric bulk insulating layer in a back end interconnection structure formed on a substrate in a processing chamber; and forming a dielectric layer on the metal silicide layer.

公开(公告)号：US20240153816A1

公开(公告)日：2024-05-09

申请号：US17980850

申请日：2022-11-04

Applicant: Applied Materials, Inc.

Inventor： Ge QU ,  Zhiyuan WU ,  Jiajie CEN ,  Feng CHEN

IPC: H01L21/768

CPC classification number: H01L21/76855 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/76882

Abstract: A method for forming a metal liner layer for an interconnect uses a multi-metal deposition process to produce a reduced thickness liner. The back-end-of-the-line packaging process may include forming a metal liner layer by depositing a ruthenium layer with a first thickness of approximately 5 angstroms or less and depositing a first cobalt layer with a second thickness of approximately 20 angstroms or less. In some embodiments, the ruthenium layer may be deposited on a previously formed barrier layer and then undergoes a treatment process before depositing the first cobalt layer. In some embodiments, the first cobalt layer may be deposited on the ruthenium layer or the ruthenium layer maybe deposited on the first cobalt layer. In some embodiments, the ruthenium layer is deposited on the first cobalt layer and a second cobalt layer is deposited on the ruthenium layer.

公开(公告)号：US20210371972A1

公开(公告)日：2021-12-02

申请号：US16889017

申请日：2020-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20150294843A1

公开(公告)日：2015-10-15

申请号：US14249042

申请日：2014-04-09

Applicant: Applied Materials, Inc.

Inventor： Feng CHEN ,  Benjamin SCHWARZ ,  Valentin N. TODOROW ,  Li ZHANG ,  Tza-Jing GUNG ,  Lu LIU

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32862 ,  H01J37/32853

Abstract: Embodiments of the present invention generally provide chamber cleaning methods for cleaning a plasma processing chamber with minimum likelihood of erosion occurred on the chamber components so as to extend service life of chamber components for semiconductor plasma applications. In one embodiment, a method of extending chamber component life in a processing chamber includes supplying a cleaning gas mixture into a plasma processing chamber, applying a RF source power to the plasma processing chamber, and applying a voltage to a substrate support assembly disposed in the processing chamber during cleaning.

Abstract translation: 本发明的实施例通常提供用于清洁等离子体处理室的室清洁方法，其中在室部件上发生最小的侵蚀可能性，以延长半导体等离子体应用的室部件的使用寿命。 在一个实施例中，一种在处理室中延长腔室部件寿命的方法包括将清洁气体混合物供应到等离子体处理室中，将RF源功率施加到等离子体处理室，以及向设置在等离子体处理室中的衬底支撑组件施加电压 处理室清洁。

公开(公告)号：US20210062330A1

公开(公告)日：2021-03-04

申请号：US17002296

申请日：2020-08-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenjing XU ,  Yufei HU ,  Gang SHEN ,  Feng CHEN

IPC: C23C16/06 ,  C23C16/52 ,  C23C16/455

Abstract: A method for capping a copper surface on a substrate. In embodiments, the methods include exposing a substrate including a copper surface and a dielectric surface to a cobalt precursor gas and a process gas including a reducing agent to selectively form a first cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, wherein a flow rate ratio of process gas to cobalt precursor gas is at least 300:1.

公开(公告)号：US20250062160A1

公开(公告)日：2025-02-20

申请号：US18749589

申请日：2024-06-20

Applicant: Applied Materials, Inc.

Inventor： Ge QU ,  Zhiyuan WU ,  Jiajie CEN ,  Feng CHEN ,  Kevin KASHEFI ,  Chengyu LIU

IPC: H01L21/768 ,  H01L21/02

Abstract: A method of forming a metal interconnect in a semiconductor structure includes performing a barrier layer deposition process to deposit a barrier layer within an opening formed through a dielectric layer, performing a liner deposition process to deposit a liner layer on the barrier layer, performing a metal treatment process to implant metal dopants into a surface of the liner layer, and performing a gap fill process to form a metal interconnect on the metal treated surface of the liner layer within the opening.