公开(公告)号：US09209074B2

公开(公告)日：2015-12-08

申请号：US14717375

申请日：2015-05-20

Applicant: Applied Materials, Inc.

Inventor： Jiang Lu ,  Hyoung-Chan Ha ,  Paul F. Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang-ho Yu ,  Murali K. Narasimhan

IPC: B05D5/12 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76871 ,  C23C16/16 ,  C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873

Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.