公开(公告)号：US20170294320A1

公开(公告)日：2017-10-12

申请号：US15484527

申请日：2017-04-11

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang CUI ,  Xing ZHONG ,  Jie LIU ,  Linlin WANG

IPC: H01L21/3213 ,  H01L29/51 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02071 ,  H01L21/28088 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795

Abstract: A method for processing a semiconductor substrate is described herein. The method described herein includes generating fluorine radicals and ions, delivering the fluorine radicals through an ion blocker to a processing region, and removing one or more portions of a gate structure to expose one or more portions of a gate dielectric material disposed thereunder. The gate structure includes at least two ceramic or metal layers, and the gate dielectric material is made of a high-k dielectric material. A substrate having the gate structure and gate dielectric material formed thereon is disposed in the processing region, and the temperature of the substrate is maintained at about 60 degrees Celsius or higher. By etching the gate structure using fluorine radicals at a temperature greater or equal to 60 degrees Celsius, the at least two ceramic or metal layers have a flat cross sectional profile.

公开(公告)号：US20170338119A1

公开(公告)日：2017-11-23

申请号：US15161783

申请日：2016-05-23

Applicant: Applied Materials, Inc.

Inventor： Hanshen ZHANG ,  Jie LIU ,  Zhenjiang CUI

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/31122

Abstract: In one implementation, a method of removing a metal-containing layer is provided. The method comprises generating a plasma from a fluorine-containing gas. The plasma comprises fluorine radicals and fluorine ions. The fluorine ions are removed from the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions. A substrate comprising a metal-containing layer is exposed to the reactive gas. The reactive gas dopes at least a portion of the metal-containing layer to form a metal-containing layer doped with fluorine radicals. The metal-containing layer doped with fluorine radicals is exposed to a nitrogen and hydrogen containing gas mixture and the reactive gas to remove at least a portion of the metal-containing layer doped with fluorine radicals.