公开(公告)号：US20190148144A1

公开(公告)日：2019-05-16

申请号：US16169610

申请日：2018-10-24

Applicant: Applied Materials, Inc.

Inventor： Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Srinivas D. NEMANI ,  Chang KE ,  Lei ZHOU

IPC: H01L21/02 ,  H01L23/31 ,  B05D1/18

Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

公开(公告)号：US20160319428A1

公开(公告)日：2016-11-03

申请号：US14750322

申请日：2015-06-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Balasubramanian RAMACHANDRAN ,  Shih Chung CHEN ,  Kevin A. PAPKE ,  Lei ZHOU ,  Jing ZHOU

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/4404 ,  C23C16/45565

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process chamber includes: a chamber body and a lid assembly defining a processing volume within the process chamber; a substrate support disposed within the processing volume to support a substrate; and a showerhead having a first surface including a plurality of gas distribution holes disposed opposite and parallel to the substrate support, wherein the showerhead is fabricated from aluminum and includes an aluminum oxide coating along the first surface, wherein the aluminum oxide coating has a thickness of about 0.0001 to about 0.002 inches. In some embodiments, the showerhead may further have at least one of a roughness of about 10 to about 300μ-in Ra, or an emissivity (ε) of about 0.20 to about 0.80. The process chamber may be a thermal atomic layer deposition (ALD) chamber.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，处理室包括：室主体和限定处理室内的处理容积的盖组件; 设置在所述处理体积内以支撑衬底的衬底支撑件; 以及具有第一表面的喷头，所述第一表面包括与所述基板支撑件相对并平行设置的多个气体分配孔，其中所述喷头由铝制成并且包括沿着所述第一表面的氧化铝涂层，其中所述氧化铝涂层的厚度为 约0.0001至约0.002英寸。 在一些实施例中，喷头还可以具有在Ra中约10至约300μ的粗糙度或约0.20至约0.80的发射率（ε）中的至少一种。 处理室可以是热原子层沉积（ALD）室。

公开(公告)号：US20230377892A1

公开(公告)日：2023-11-23

申请号：US17748329

申请日：2022-05-19

Applicant: Applied Materials, Inc.

Inventor： Yiyang WAN ,  Weifeng YE ,  Shumao ZHANG ,  Gary HOW ,  Jiang LU ,  Lei ZHOU ,  Dien-yeh WU ,  Douglas LONG ,  Avgerinos V. GELATOS ,  Ying-Bing JIANG ,  Rongjun WANG ,  Xianmin TANG ,  Halbert CHONG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42 ,  C23C16/507

CPC classification number: H01L21/28518 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32357 ,  C23C16/42 ,  C23C16/507 ,  H01J37/32816 ,  H01J2237/332

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises forming a plasma reaction between titanium tetrachloride (TlCl4), hydrogen (H2), and argon (Ar) in a region between a lid heater and a showerhead of a process chamber or the showerhead and a substrate while providing RF power at a pulse frequency of about 5 kHz to about 100 kHz and at a duty cycle of about 10% to about 20% and flowing reaction products into the process chamber to selectively form a titanium material layer upon a silicon surface of the substrate.

公开(公告)号：US20230122956A1

公开(公告)日：2023-04-20

申请号：US17506075

申请日：2021-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Halbert CHONG ,  John C. FORSTER ,  Irena H. WYSOK ,  Tiefeng SHI ,  Gang FU ,  Renu WHIG ,  Keith A. MILLER ,  Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Jianxin LEI ,  Rongjun WANG ,  Tza-Jing GUNG ,  Kirankumar Neelasandra SAVANDAIAH ,  Avinash NAYAK ,  Lei ZHOU

IPC: C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

公开(公告)号：US20210319983A1

公开(公告)日：2021-10-14

申请号：US16846295

申请日：2020-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Pingyan LEI ,  Dien-Yeh WU ,  Xiao Ming HE ,  Jennifer Y. SUN ,  Lei ZHOU ,  Takashi KURATOMI ,  Avgerinos V. GELATOS ,  Mei CHANG ,  Steven D. MARCUS

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/06 ,  C23C16/44 ,  C23C16/455

Abstract: Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

公开(公告)号：US20230073011A1

公开(公告)日：2023-03-09

申请号：US17900318

申请日：2022-08-31

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Halbert CHONG ,  Irena H. WYSOK ,  Jianxin LEI ,  Rongjun WANG ,  Lei ZHOU ,  Kirankumar Neelasandra SAVANDAIAH ,  Sundarapandian Ramalinga Vijayalakshmi REDDY

IPC: H01J37/34 ,  C23C14/56

Abstract: Methods and apparatus reduce defects in substrates processed in a physical vapor (PVD) chamber. In some embodiments, a method for cleaning a process kit disposed in an inner volume of a process chamber includes positioning a non-sputtering shutter disk on a substrate support of the PVD chamber; energizing an oxygen-containing cleaning gas disposed in the inner volume of the PVD chamber to create a plasma reactive with carbon-based materials; and heating the process kit having a carbon-based material adhered thereto while exposed to the plasma to remove at least a portion of the carbon-based material adhered to the process kit.