公开(公告)号：US20190211447A1

公开(公告)日：2019-07-11

申请号：US15577666

申请日：2017-09-21

申请人： Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

发明人： Gaozhen WANG

IPC分类号： C23C16/455 ,  C23C16/458 ,  H01L51/52 ,  H01L51/56 ,  C23C14/04

CPC分类号： C23C16/45508 ,  C23C14/04 ,  C23C16/455 ,  C23C16/45559 ,  C23C16/4582 ,  H01L51/52 ,  H01L51/56

摘要： Embodiments of the present disclosure provide a gas diffusion device and a film-forming apparatus. The gas diffusion device includes a cover plate, a first diffusion part and a second diffusion part. The first diffusion part cooperates with the cover plate to define a first diffusion space and a gas inlet that communicates with the first diffusion space. The second diffusion part cooperates with the cover plate to define a second diffusion space and a gas outlet that communicates with the second diffusion space. The second diffusion space communicates with the first diffusion space. In a direction from the gas inlet to the gas outlet, a gas between the first diffusion part and the cover plate decreases in height gradually, and a gap between the second diffusion part and the cover plate increases in height gradually at first and then decreases in height gradually.

公开(公告)号：US20180130706A1

公开(公告)日：2018-05-10

申请号：US15510732

申请日：2015-09-03

申请人： Entegris, inc.

发明人： Philip S.H. Chen ,  William Hunks ,  Steven Lippy ,  Ruben Remco Lieten

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  C23C16/02 ,  C23C16/56 ,  C23C16/455 ,  C23C16/06 ,  H01L21/02

CPC分类号： H01L21/76879 ,  C23C16/02 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45559 ,  C23C16/56 ,  H01L21/02063 ,  H01L21/28562 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53266

摘要： A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.

公开(公告)号：US20170175268A1

公开(公告)日：2017-06-22

申请号：US15131297

申请日：2016-04-18

申请人： National Tsing Hua University

发明人： Tsong-Pyng Perng ,  Chi-Chung Kei ,  Chien-Pao Lin ,  Mrinalini Mishra ,  Sheng-Hsin Huang ,  Kuang-I Liu ,  Yu-Hsuan Yu

IPC分类号： C23C16/455

CPC分类号： C23C16/45559 ,  C23C16/45502 ,  C23C16/45544

摘要： An enclosed-channel reactor system is provided, which includes: a reactor body having a plurality of enclosed channels therein; an upper cap disposed at one end of the reactor body and having an inlet port communicating with the plurality of enclosed channels; a lower cap disposed at the other end of the reactor body opposite to the upper cap and having an outlet port communicating with the plurality of enclosed channels; and at least a conduit plate disposed between the upper cap and the reactor body for guiding a precursor injected from the inlet port into the plurality of enclosed channels uniformly.

公开(公告)号：US20170096739A1

公开(公告)日：2017-04-06

申请号：US14876156

申请日：2015-10-06

申请人： City University of Hong Kong

发明人： KWOK YAN LI ,  ZHIFENG ZHOU ,  PO WAN SHUM

IPC分类号： C23C16/513 ,  C23C16/455

CPC分类号： C23C16/513 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/45559 ,  C23C16/505 ,  C23C16/5096

摘要： Homogeneous and transparent protective coatings for precious metals and copper alloys and techniques for forming the coatings on precious metals and copper alloys are provided. In an embodiment, ionic oxide film is deposited onto a surface of a substrate including a metal, such as a precious metal and/or a copper alloy, using pulsed chemical vapor deposition (PCVD). A homogenous and transparent solid film based on ionic oxide is formed on the surface of the substrate in response to the depositing.

公开(公告)号：US08273409B2

公开(公告)日：2012-09-25

申请号：US13158180

申请日：2011-06-10

申请人： Masamichi Hara ,  Yasushi Mizusawa ,  Satoshi Taga ,  Atsushi Gomi ,  Tatsuo Hatano

发明人： Masamichi Hara ,  Yasushi Mizusawa ,  Satoshi Taga ,  Atsushi Gomi ,  Tatsuo Hatano

IPC分类号： C23C16/00

CPC分类号： C23C16/45559 ,  C23C16/16 ,  H01L21/28562

摘要： Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.

摘要翻译： 本发明公开了一种成膜方法，其特征在于，含有含有含羰基金属的处理气体和一氧化碳的载气的处理气流流入基板的外周的上侧的区域，为 在衬底的直径方向处理，同时避免衬底的表面并将金属羰基从处理气流扩散到衬底的表面中，以在衬底的表面上形成金属膜。

公开(公告)号：US20120174866A1

公开(公告)日：2012-07-12

申请号：US13217423

申请日：2011-08-25

申请人： Yun-Sung Huh ,  Seung-Il Park

发明人： Yun-Sung Huh ,  Seung-Il Park

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45559

摘要： An apparatus for chemical vapor deposition is disclosed. An aspect of the present invention provides an apparatus for chemical vapor deposition that includes: a process chamber configured to demarcate a reaction space; a back plate placed above the reaction space and having a gas inlet in a middle thereof; a gas diffusion member arranged below and separated from the gas inlet and coupled to the back plate by a first coupling member and configured to diffuse process gas supplied through the gas inlet; a shower head placed below and separated from the back plate and the gas diffusion member and having a middle part thereof coupled to the gas diffusion member by a second coupling member and having a plurality of spray holes perforated therein; and a susceptor arranged below and separated from the shower head and supporting a substrate. The gas diffusion member has a plurality of gas guiding holes that vertically penetrate the gas diffusion member such that the process gas supplied through the gas inlet is diffused toward a lower side of the gas diffusion member.

摘要翻译： 公开了一种用于化学气相沉积的装置。 本发明的一个方面提供了一种用于化学气相沉积的装置，其包括：处理室，被配置为界定反应空间; 背板放置在反应空间上方并且在其中间具有气体入口; 气体扩散构件，其布置在气体入口下方并与气体入口分离并且通过第一联接构件联接到后板，并且构造成扩散通过气体入口供应的工艺气体; 放置在背板和气体扩散构件的下方并与之隔开的淋浴喷头，其中间部分通过第二联接构件联接到气体扩散构件并且在其中穿有多个喷射孔; 以及设置在淋浴头下方并与淋浴头分离并支撑基底的感受体。 气体扩散部件具有垂直贯穿气体扩散部件的多个气体导向孔，使得从气体入口供给的工艺气体向气体扩散部件的下侧扩散。

公开(公告)号：US20080166884A1

公开(公告)日：2008-07-10

申请号：US11620740

申请日：2007-01-08

申请人： Shelby F. Nelson ,  David H. Levy ,  Roger S. Kerr

发明人： Shelby F. Nelson ,  David H. Levy ,  Roger S. Kerr

IPC分类号： C23C16/00 ,  H01L21/02

CPC分类号： C23C16/45551 ,  B33Y80/00 ,  C23C16/4412 ,  C23C16/45517 ,  C23C16/45519 ,  C23C16/45559 ,  C23C16/45568 ,  C23C16/45574 ,  C23C16/54

摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

摘要翻译： 公开了一种在衬底上沉积薄膜材料的方法，包括同时引导一系列气体流从薄膜沉积系统的输送头的输出面朝向衬底的表面，并且其中一系列气体流动 包括至少第一反应性气体材料，惰性吹扫气体和第二反应性气态材料，其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应。 还公开了能够进行这种处理的系统。

公开(公告)号：US07022184B2

公开(公告)日：2006-04-04

申请号：US10461893

申请日：2003-06-12

申请人： Margreet Albertine Anne-Marie Van Wijck

发明人： Margreet Albertine Anne-Marie Van Wijck

IPC分类号： C30B25/14

CPC分类号： C30B25/14 ,  C23C16/4412 ,  C23C16/45508 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45559 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Atomic layer deposition is used to provide a solid film on a plurality of disc shaped substrates. The substrates are entered spaced apart in a boat, in a furnace and heated to deposition temperature. In the furnace the substrate is exposed to alternating and sequential pulses of at least two mutually reactive reactants, in such way that the deposition temperature is high enough to prevent condensation of the at least two reactants on the surface but not high enough to result in significant thermal decomposition of each of the at least two reactants individually.

公开(公告)号：US20030209193A1

公开(公告)日：2003-11-13

申请号：US10461893

申请日：2003-06-12

发明人： Margreet Albertine Anne-Marie Van Wijck

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C30B25/14 ,  C23C16/4412 ,  C23C16/45508 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45559 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Atomic layer deposition is used to provide a solid film on a plurality of disc shaped substrates. The substrates are entered spaced apart in a boat, in a furnace and heated to deposition temperature. In the furnace the substrate is exposed to alternating and sequential pulses of at least two mutually reactive reactants, in such way that the deposition temperature is high enough to prevent condensation of the at least two reactants on the surface but not high enough to result in significant thermal decomposition of each of the at least two reactants individually.

摘要翻译： 原子层沉积用于在多个盘形基底上提供固体膜。 基板在船中间隔开，在炉中并加热到沉积温度。 在炉中，衬底暴露于至少两个相互反应的反应物的交替和连续脉冲，使得沉积温度足够高以防止表面上的至少两种反应物冷凝，但不足以导致显着的 分别对至少两种反应物中的每一种进行热分解。

公开(公告)号：US20170162366A1

公开(公告)日：2017-06-08

申请号：US14962558

申请日：2015-12-08

申请人： ASM IP Holding B.V.

发明人： Ippei YANAGISAWA

IPC分类号： H01J37/32 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509

CPC分类号： H01J37/3244 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45559 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/3323

摘要： A film forming apparatus includes a lower electrode, an upper electrode provided above and in opposition to the lower electrode and having a plurality of openings, a transport tube which provides a passage extending generally in a vertical direction and connecting to a space above the upper electrode, a gas supply line connected to a side surface of the transport tube and providing a passage communicating with a space in the transport tube, and a gas diffuser gate valve connected to a portion of the side surface of the transport tube at a position lower in the vertical direction than the position at which the gas supply line is connected, wherein the gas diffuser gate valve has a diffusion plate which blocks part of the space in the transport tube.