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公开(公告)号:US12195635B1
公开(公告)日:2025-01-14
申请号:US18417560
申请日:2024-01-19
Applicant: Applied Materials, Inc.
IPC: C09D11/00 , C09D11/101 , C09D11/322 , C09D11/52 , H10K50/115
Abstract: Liquid dispersions of quantum dot particles include an acrylic medium having a boiling point in a range of from greater than or equal to 100° C. to less than or equal to 500° C., quantum dot particles dispersed in the acrylic medium, a photo-initiator, and a surface additive. The liquid dispersions of quantum dot particles are useful as stable liquid formulations that resist gelling for spin-coating and ink-jet printing of color conversion layers in the manufacture of LED and micro-LED panels for advanced displays. Methods of manufacturing light-emitting devices using the liquid dispersions of quantum dot particles are also disclosed.
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公开(公告)号:US20230348778A1
公开(公告)日:2023-11-02
申请号:US18141655
申请日:2023-05-01
Applicant: Applied Materials, Inc.
Inventor: Kulandaivelu Sivanandan , Sivapackia Ganapathiappan , Nag Patibandla
Abstract: Multilayered semiconductor particles, which may be referred to as a quantum dots, may include a zinc-containing core. The particles may include a zinc-and-selenium-containing inner shell on the zinc-containing core. The particles may include a zinc-containing outer shell on the zinc-and-selenium-containing inner shell. The particles may include a phosphorous-containing material in contact with the zinc-containing outer shell. The phosphorous-containing material may be or include triisopropyl phosphite (TIPP), bis(2,4-di-tert-butylphenyl) pentaerythritol diphosphate (B PEDP), tris(2, 4-di-tert-butylphenyl)phosphite (TDTBPP), triethylphosphite, tris(2-ethylhexylphosphite), tris(trimethylsilyl)phosphite, triphenylphosphite, triphenyl phosphine, tris(4-methoxyphenyl)phosphine, tris(1-pyrrolidinyl)phosphine, tri(2-furyl)phosphine, or tris(dimethylamino)phosphine.
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公开(公告)号:US20230335693A1
公开(公告)日:2023-10-19
申请号:US18126701
申请日:2023-03-27
Applicant: Applied Materials, Inc.
Inventor: Sivapackia Ganapathiappan , Kulandaivelu Sivanandan , Lisong Xu , Mingwei Zhu , Hou T. Ng , Nag Patibandla
CPC classification number: H01L33/58 , H01L27/156 , H01L33/502
Abstract: Exemplary device structures may include a light emitting diode structure. The light emitting diode structure may be operable to generate light. The structures may include a photoluminescent region containing a photoluminescent material. The photoluminescent region may be positioned on the light emitting diode structure. The structures may include an ultraviolet (UV) light filter positioned above the photoluminescent region. The UV light filter may be operable to absorb light generated by the light emitting diode structure characterized by an emission wavelength of less than or about 430 nm.
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公开(公告)号:US12187935B1
公开(公告)日:2025-01-07
申请号:US18537051
申请日:2023-12-12
Applicant: Applied Materials, Inc.
Inventor: Sivapackia Ganapathiappan , Kulandaivelu Sivanandan , Nag Bhushanam Patibandla , Anthony Kipkorir
IPC: C09K11/06 , C09K11/02 , H10K50/115 , H10K71/00
Abstract: Liquid dispersions of quantum dot particles comprise an acrylic medium and quantum dot particles dispersed in the acrylic medium have an initial viscosity. The quantum particles comprise ligands attached to the quantum dot particles, the ligands comprising functional groups configured to stabilize the initial viscosity liquid dispersion of the quantum dot particles. The liquid dispersions of quantum dot particles are useful as stable liquid formulations that resist gelling for spin-coating and inkjet printing of color conversion layers in the manufacture of LED and micro-LED panel for advanced displays. Methods of manufacturing light-emitting devices using the liquid dispersions of quantum dot particles are disclosed.
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公开(公告)号:US20240096854A1
公开(公告)日:2024-03-21
申请号:US18244466
申请日:2023-09-11
Applicant: Applied Materials, Inc.
Inventor: Zhiyong Li , Sivapackia Ganapathiappan , Kulandaivelu Sivanandan , Hao Yu , Hou T. Ng , Nag Patibandla , Mingwei Zhu , Lisong Xu , Kai Ding
IPC: H01L25/075
CPC classification number: H01L25/0753 , H01L33/56
Abstract: Processing methods are described that include forming a group of LED structures on a substrate layer to form a patterned LED substrate. The methods also include depositing a light absorption material on the pattered LED substrate, where the light absorption material includes at least one photocurable compound and at least one ultraviolet light absorbing material. The methods further include exposing a portion of the light absorption material to patterned light, wherein the patterned light cures the exposed portion of the light absorption material into pixel isolation structures. The methods additionally include depositing an isotropic layer on a top portion and a side portion of the pixel isolation structures, where the LED structures are substantially free of the as-deposited isotropic light reflecting layer.
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