NARROWBAND QUANTUM DOTS AND METHODS OF MAKING THEM

    公开(公告)号:US20230174861A1

    公开(公告)日:2023-06-08

    申请号:US18070703

    申请日:2022-11-29

    CPC classification number: C09K11/883 B82Y20/00

    Abstract: Methods of making a multilayered semiconductor particle, which may be referred to as a quantum dot, are described. The methods include combining a first zinc-containing compound and a selenium-containing compound to form a ZnSe mixture. The zinc-containing compound and the selenium-containing compound are rapidly combined in less than or about 5 seconds. The methods also include adding a tellurium-containing compound to the ZnSe mixture to form at least one ZnSeTe particle in a ZnSeTe mixture. The methods still further include forming a first shell layer on the ZnSeTe particle and forming a second shell layer on the first shell layer to make the multilayered semiconductor particle. In additional embodiments, the reactant and particle mixtures may be rapidly stirred. The light emitted by the multilayered semiconductor particles may be characterized by an enhanced narrowband emission profile (i.e., sharpness).

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