公开(公告)号：US11901477B2

公开(公告)日：2024-02-13

申请号：US17350523

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Fabio Pieralisi ,  Mingwei Zhu ,  Zihao Yang ,  Liang Zhao ,  Jeffrey L. Franklin ,  Hou T. Ng ,  Nag Patibandla

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/0093 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L2933/0066

Abstract: Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.

公开(公告)号：US20220399479A1

公开(公告)日：2022-12-15

申请号：US17345970

申请日：2021-06-11

Applicant: Applied Materials, Inc.

Inventor： Lisong Xu ,  Mingwei Zhu ,  Byung Sung Kwak ,  Hyunsung Bang ,  Liang Zhao ,  Hou T. Ng ,  Sivapackia Ganapathiappan ,  Nag Patibandla

IPC: H01L33/44 ,  H01L33/62 ,  H01L25/075 ,  H01L33/50 ,  H01L33/00 ,  H01L21/66 ,  G02B27/01

Abstract: Methods of making high-pixel-density LED structures are described. The methods may include forming a backplane substrate and a LED substrate. The backplane substrate and the LED substrate may be bonded together, and the bonded substrates may include an array of LED pixels. Each of the LED pixels may include a group of isolated subpixels. A quantum dot layer may be formed on at least one of the isolated subpixels in each of the LED pixels. The methods may further include repairing at least one defective LED pixel by forming a replacement quantum dot layer on a quantum-dot-layer-free subpixel in the defective LED pixel. The methods may also include forming a UV barrier layer on the array of LED pixels after the repairing of the at least one defective LED pixel.

公开(公告)号：US20230174861A1

公开(公告)日：2023-06-08

申请号：US18070703

申请日：2022-11-29

Applicant: Applied Materials, Inc.

Inventor： Sivapackia Ganapathiappan ,  Nag Patibandla ,  Gopi Chandran Ramachandran ,  Srinivas Oruganti ,  Saikat Sen ,  Mahesh Kumar Uppada ,  Arunangshu Biswas

IPC: C09K11/88

CPC classification number: C09K11/883 ,  B82Y20/00

Abstract: Methods of making a multilayered semiconductor particle, which may be referred to as a quantum dot, are described. The methods include combining a first zinc-containing compound and a selenium-containing compound to form a ZnSe mixture. The zinc-containing compound and the selenium-containing compound are rapidly combined in less than or about 5 seconds. The methods also include adding a tellurium-containing compound to the ZnSe mixture to form at least one ZnSeTe particle in a ZnSeTe mixture. The methods still further include forming a first shell layer on the ZnSeTe particle and forming a second shell layer on the first shell layer to make the multilayered semiconductor particle. In additional embodiments, the reactant and particle mixtures may be rapidly stirred. The light emitted by the multilayered semiconductor particles may be characterized by an enhanced narrowband emission profile (i.e., sharpness).

公开(公告)号：US20220406960A1

公开(公告)日：2022-12-22

申请号：US17350523

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Fabio Pieralisi ,  Mingwei Zhu ,  Zihao Yang ,  Liang Zhao ,  Jeffrey L. Franklin ,  Hou T. Ng ,  Nag Patibandla

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62

Abstract: Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.

公开(公告)号：US20240145623A1

公开(公告)日：2024-05-02

申请号：US18542260

申请日：2023-12-15

Applicant: Applied Materials, Inc.

Inventor： Fabio Pieralisi ,  Mingwei Zhu ,  Zihao Yang ,  Liang Zhao ,  Jeffrey L. Franklin ,  Hou T. Ng ,  Nag Patibandla

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/0093 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L2933/0066

Abstract: Exemplary semiconductor structures may include a plurality of LED structures and a backplane layer. Exemplary semiconductor structures may also include a light barrier region positioned between the LED structures and the backplane layer. The light barrier region may be operable to absorb light at wavelengths shorter than or about 300 nm and transmit light at wavelengths greater than or about 350.

公开(公告)号：US20240096854A1

公开(公告)日：2024-03-21

申请号：US18244466

申请日：2023-09-11

Applicant: Applied Materials, Inc.

Inventor： Zhiyong Li ,  Sivapackia Ganapathiappan ,  Kulandaivelu Sivanandan ,  Hao Yu ,  Hou T. Ng ,  Nag Patibandla ,  Mingwei Zhu ,  Lisong Xu ,  Kai Ding

IPC: H01L25/075

CPC classification number: H01L25/0753 ,  H01L33/56

Abstract: Processing methods are described that include forming a group of LED structures on a substrate layer to form a patterned LED substrate. The methods also include depositing a light absorption material on the pattered LED substrate, where the light absorption material includes at least one photocurable compound and at least one ultraviolet light absorbing material. The methods further include exposing a portion of the light absorption material to patterned light, wherein the patterned light cures the exposed portion of the light absorption material into pixel isolation structures. The methods additionally include depositing an isotropic layer on a top portion and a side portion of the pixel isolation structures, where the LED structures are substantially free of the as-deposited isotropic light reflecting layer.

公开(公告)号：US20220302339A1

公开(公告)日：2022-09-22

申请号：US17671235

申请日：2022-02-14

Applicant: Applied Materials, Inc.

Inventor： Hou T. Ng ,  Nag Patibandla ,  Uma Sridhar ,  Sivapackia Ganapathiappan ,  Mingwei Zhu

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/62

Abstract: Exemplary processing methods of forming an LED structure on a backplane may include coupling a first transfer substrate with an LED source substrate. The LED source substrate may include a plurality of fabricated LEDs. The coupling of the first transfer substrate may be produced with a first coupling material extending between the first transfer substrate and each LED of the plurality of fabricated LEDs. The methods may include separating the LED source substrate from the LEDs. The methods may include coupling a second transfer substrate with the first transfer substrate. The coupling of the first transfer substrate may be produced with a second coupling material extending between the second transfer substrate and each LED of the plurality of fabricated LEDs. The methods may include separating the first transfer substrate from the second transfer substrate. The methods may include bonding the plurality of fabricated LEDs with a display backplane.

公开(公告)号：US20220149250A1

公开(公告)日：2022-05-12

申请号：US17522148

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Robert Anthony Nordsell ,  Mingwei Zhu ,  Nag Patibandla ,  John D. Busch ,  Moon Young Shin ,  Asha Parekh ,  Hou T. Ng

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/00 ,  H01L33/60

Abstract: Exemplary pixel structures may include a pixel structure of a display device panel stack. The structures may include a first panel. The first panel may include a plurality of ultraviolet light sources disposed on a backplane. The structures may also include a second panel. The second panel may be coupled with the first panel. The second panel may have an inner surface facing the ultraviolet light sources. The second panel may include a transparent substrate and a down-conversion layer. The down-conversion layer may be disposed overlying the transparent substrate. The down-conversion layer may be configured to down-convert ultraviolet light into visible light. The plurality of ultraviolet light sources and the inner surface of the second panel may be separated by a distance of at least 2 μm.

公开(公告)号：US20230348778A1

公开(公告)日：2023-11-02

申请号：US18141655

申请日：2023-05-01

Applicant: Applied Materials, Inc.

Inventor： Kulandaivelu Sivanandan ,  Sivapackia Ganapathiappan ,  Nag Patibandla

IPC: C09K11/02 ,  H10K59/38 ,  H10K71/10 ,  B82Y20/00 ,  C09K11/06

CPC classification number: C09K11/02 ,  H10K59/38 ,  H10K71/10 ,  B82Y20/00 ,  C09K11/06

Abstract: Multilayered semiconductor particles, which may be referred to as a quantum dots, may include a zinc-containing core. The particles may include a zinc-and-selenium-containing inner shell on the zinc-containing core. The particles may include a zinc-containing outer shell on the zinc-and-selenium-containing inner shell. The particles may include a phosphorous-containing material in contact with the zinc-containing outer shell. The phosphorous-containing material may be or include triisopropyl phosphite (TIPP), bis(2,4-di-tert-butylphenyl) pentaerythritol diphosphate (B PEDP), tris(2, 4-di-tert-butylphenyl)phosphite (TDTBPP), triethylphosphite, tris(2-ethylhexylphosphite), tris(trimethylsilyl)phosphite, triphenylphosphite, triphenyl phosphine, tris(4-methoxyphenyl)phosphine, tris(1-pyrrolidinyl)phosphine, tri(2-furyl)phosphine, or tris(dimethylamino)phosphine.

公开(公告)号：US20230343904A1

公开(公告)日：2023-10-26

申请号：US18305852

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Kai Ding ,  Lisong Xu ,  Mingwei Zhu ,  Zhiyong Li ,  Hou T. Ng ,  Sivapackia Ganapathiappan ,  Nag Patibandla

IPC: H01L33/46 ,  H01L25/16

CPC classification number: H01L33/46 ,  H01L25/167 ,  H01L2933/0025

Abstract: Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using multiple layers in a distributed Bragg reflector configuration. This reflective coating may be formed during the LED fabrication process before the micro-LED structure is coupled to the backplane. The pixel isolation structures on the backplane may also include a reflective coating that is applied above the LED epilayers.